I-Silicon carbide iwuhlobo olusha lwe-ceramics olusebenza ngezindleko eziphakeme kanye nezakhiwo ezinhle kakhulu zezinto ezibonakalayo. Ngenxa yezici ezinjengamandla aphezulu nobulukhuni, ukumelana nokushisa okuphezulu, ukuguquguquka okukhulu kokushisa kanye nokumelana nokubola kwamakhemikhali, i-Silicon Carbide icishe imelane nayo yonke into yamakhemikhali. Ngakho-ke, i-SiC isetshenziswa kakhulu ezimayini zikawoyela, amakhemikhali, imishini kanye ne-airspace, ngisho namandla enuzi kanye nezempi banezidingo zabo ezikhethekile ku-SIC. Olunye uhlelo olujwayelekile esingalunikeza izindandatho zophawu lwepompo, i-valve nezikhali zokuzivikela njll.
Siyakwazi ukuklama nokwenza ngokuvumelana nobukhulu bakho obuthile ngekhwalithi enhle nesikhathi sokuletha esinengqondo.
Amapharamitha wobuchwepheshe:
I-Material Datasheet
| 材料Material | I-R-SiC |
| 使用温度Izinga lokushisa lokusebenza (°C) | 1600°C (氧化气氛Imvelo ene-oxidizing) 1700°C (还原气氛Ukunciphisa imvelo) |
| I-SiC含量Okuqukethwe kwe-SiC (%) | > 99 |
| 自由Si含量Okuqukethwe kwamahhala kwe-Si (%) | <0.1 |
| 体积密度Ukuminyana ngobuningi (g/cm3) | 2.60-2.70 |
| 气孔率I-porosity ebonakalayo (%) | < 16 |
| 抗压强度Amandla okuchoboza (MPa) | > 600 |
| 常温抗弯强度Amandla okugoba okubandayo (MPa) | 80-90 (20°C) |
| 高温抗弯强度Amandla okugoba ashisayo (MPa) | 90-100 (1400°C) |
| 热膨胀系数 I-Thermal expansion coefficient @1500°C (10-6/°C) | 4.70 |
| 导热系数I-Thermal conductivity @1200°C (W/m•K) | 23 |
| 杨氏模量I-Elastic modulus (GPa) | 240 |
| 抗热震性Ukumelana nokushaqeka okushisayo | 很好Kuhle ngokwedlulele |
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