Ama-GaAs substrates ahlukaniswe abe yi-conductive ne-semi-insulating, asetshenziswa kakhulu ku-laser (LD), i-semiconductor light-emitting diode (LED), i-laser eseduze ne-infrared, i-quantum well-high-power laser kanye namaphaneli elanga asebenza kahle kakhulu. I-HEMT ne-HBT chips ye-radar, i-microwave, igagasi eliyimilimitha noma amakhompyutha anesivinini esiphezulu kanye nokuxhumana okubonakalayo; Imishini yefrikhwensi yomsakazo yokuxhumana okungenantambo, i-4G, i-5G, ukuxhumana ngesathelayithi, i-WLAN.
Muva nje, ama-substrates e-gallium arsenide nawo enze inqubekelaphambili enkulu ku-mini-LED, Micro-LED, ne-LED ebomvu, futhi asetshenziswa kabanzi kumadivayisi agqokekayo we-AR/VR.
| Ububanzi | 50mm | 75mm | 100mm | 150mm |
| Indlela Yokukhula | I-LEC液封直拉法 |
| Ubukhulu be-Wafer | 350 um ~ 625 um |
| Ukuqondisa | <100> / <111> / <110> noma abanye |
| Uhlobo Lokuqhuba | P – uhlobo / N – uhlobo / Semi-insulating |
| Uhlobo/I-Dopant | Zn / Si / kwehlisiwe |
| I-Carrier Concentration | 1E17 ~ 5E19 cm-3 |
| Ukumelana ne-RT | ≥1E7 ye-SI |
| Ukuhamba | ≥4000 |
| I-EPD( Etch Pit Density) | 100~1E5 |
| I-TTV | ≤ 10 um |
| Umnsalo / Warp | ≤ 20 um |
| I-Surface Qeda | I-DSP/SSP |
| I-Laser Mark |
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| Ibanga | Ibanga eliphucuziwe le-Epi/ibanga lomshini |










