I-Gallium Nitride Substrates|GaN Wafers

Incazelo emfushane:

I-Gallium nitride (GaN), njengezinto ze-silicon carbide (SiC), ingeyesizukulwane sesithathu sezinto zokwakha ze-semiconductor ezinobubanzi begebe lebhande elibanzi, nobubanzi begebe lebhande elikhulu, ukuqhutshwa kokushisa okuphezulu, izinga lokufuduka kwe-electron ephezulu, kanye nensimu kagesi ephukile evelele. izici.Imishini ye-GaN inohlu olubanzi lwamathemba ohlelo lokusebenza emazingeni aphezulu, isivinini esikhulu kanye nezinkambu zokufunwa kwamandla aphezulu njengezibani ze-LED ezonga amandla, isibonisi se-laser projection, izimoto zamandla amasha, igridi ehlakaniphile, ukuxhumana kwe-5G.

Thumela i-imeyili kithi

Imininingwane Yomkhiqizo

Omaka bomkhiqizo

Izinto ze-semiconductor yesizukulwane sesithathu ikakhulukazi zifaka i-SiC, i-GaN, idayimane, njll., ngoba ububanzi begebe lebhendi yayo (Isb) bukhulu noma bulingana nama-electron volts (eV) angu-2.3 (eV), owaziwa nangokuthi i-wide band gap semiconductor materials. Uma kuqhathaniswa nezinto zokwakha ze-semiconductor yesizukulwane sokuqala nesesibili, izinto zokwakha ze-semiconductor yesizukulwane sesithathu zinezinzuzo zokubamba okuphezulu okushisayo, insimu kagesi ewohlokayo, izinga eliphezulu lokufuduka kwama-electron namandla aphezulu okubopha, okungahlangabezana nezidingo ezintsha zobuchwepheshe besimanje be-elekthronikhi izinga lokushisa, amandla aphezulu, umfutho ophezulu, imvamisa ephezulu kanye nokumelana nemisebe nezinye izimo ezinzima. Inamathemba okusebenza abalulekile emikhakheni yezokuvikela kuzwelonke, ezondiza, i-aerospace, ukuhlola uwoyela, ukugcinwa kwamehlo, njll., futhi inganciphisa ukulahleka kwamandla ngaphezu kuka-50% ezimbonini zamasu eziningi ezifana nezokuxhumana nge-broadband, amandla elanga, ukukhiqiza izimoto, ukukhanya kwe-semiconductor, kanye negridi ehlakaniphile, futhi kunganciphisa umthamo wezinto zokusebenza ngamaphesenti angaphezu kwama-75, okubaluleke kakhulu ekuthuthukisweni kwesayensi yabantu nobuchwepheshe.

Into 项目	I-GaN-FS-CU-C50	I-GaN-FS-CN-C50	I-GaN-FS-C-SI-C50
Ububanzi 晶圆直径	50.8 ± 1 mm
Ubukhulu厚度	350 ± 25 μm
Ukuqondisa 晶向	Indiza engu-C (0001) isuka ku-engeli ibheke ku-M-eksisi 0.35 ± 0.15°
I-Prime Flat 主定位边	(1-100) 0 ± 0.5°, 16 ± 1 mm
Ifulethi lesibili 次定位边	(11-20) 0 ± 3°, 8 ± 1 mm
I-Conductivity 导电性	N-uhlobo	N-uhlobo	I-Semi-Insulating
Ukungazweli (300K) 电阻率	<0.1 Ω·cm	<0.05 Ω·cm	> 106 Ω·cm
I-TTV 平整度	≤ 15 μm
KHOTHAMA 弯曲度	≤ 20 μm
Ga Face Surface Madlakadlaka Ga面粗糙度	<0.2 nm (epholishiwe);
	noma <0.3 nm (ukwelashwa okupholishiwe nokungaphezulu kwe-epitaxy)
N Ukuqina Kobuso Bobuso N面粗糙度	0.5 ~ 1.5 μm
	inketho: 1 ~ 3 nm (umhlabathi omuhle); <0.2 nm (epholishiwe)
Ukuminyana Kokususwa 位错密度	Kusukela ku-1 x 105 ukuya ku-3 x 106 cm-2 (kubalwa yi-CL)*
I-Macro Defect Density 缺陷密度	<2cm-2
Indawo Esebenzisekayo 有效面积	> 90% (okungafakwanga kahle emaphethelweni nakuma-macro)
Kungenziwa ngokwezifiso ngokuya ngezidingo zamakhasimende, ukwakheka okuhlukile kwe-silicon, isafire, ishidi le-GaN epitaxial elisuselwa ku-SiC.