I-SemiceraI-Silicon Carbide Ceramic Coatingiyinamathela evikelayo esebenza kahle kakhulu eyenziwe nge-silicon carbide (SiC) eqinile kakhulu futhi engagugi. I enamathela ngokuvamile efakwe phezu substrate by CVD noma PVD inqubo ngeizinhlayiya ze-silicon carbide, ukuhlinzeka ngokumelana nokugqwala kwamakhemikhali okuhle kakhulu kanye nokuzinza okuphezulu kwezinga lokushisa. Ngakho-ke, i-Silicon Carbide Ceramic Coating isetshenziswa kabanzi ezingxenyeni ezibalulekile zemishini yokukhiqiza ye-semiconductor.
Ekwenziweni kwe-semiconductor,Ukufakwa kwe-SiCingamelana namazinga okushisa aphakeme kakhulu afinyelela ku-1600°C, ngakho-ke i-Silicon Carbide Ceramic Coating ivame ukusetshenziswa njengesendlalelo esivikelayo semishini noma amathuluzi okuvimbela ukulimala endaweni eshisa kakhulu noma ezindaweni ezibolayo.
Ngesikhathi esifanayo,i-silicon carbide ye-ceramic coatingingamelana nokuguguleka kwama-asidi, ama-alkali, ama-oxides namanye ama-reagents amakhemikhali, futhi inokumelana nokugqwala okuphezulu ezinhlobonhlobo zamakhemikhali. Ngakho-ke, lo mkhiqizo ulungele izindawo ezihlukahlukene ezonakalisayo embonini ye-semiconductor.
Ngaphezu kwalokho, uma kuqhathaniswa nezinye izinto ze-ceramic, i-SiC ine-conductivity ephezulu ye-thermal futhi ingakwazi ukuqhuba ukushisa ngempumelelo. Lesi sici sinquma ukuthi ezinqubweni ze-semiconductor ezidinga ukulawulwa kwezinga lokushisa okunembile, ukuhanjiswa okuphezulu kwe-thermalI-Silicon Carbide Ceramic Coatingisiza ukuhlakaza ukushisa ngokulinganayo, ivimbele ukushisa kwasendaweni, futhi iqinisekise ukuthi idivayisi isebenza ngezinga lokushisa elilungile.
| Izakhiwo ezibonakalayo eziyisisekelo ze-CVD sic coating | |
| Impahla | Inani Elijwayelekile |
| Isakhiwo Sekristalu | I-FCC β isigaba se-polycrystalline, ikakhulukazi (111) eqondiswe |
| Ukuminyana | 3.21 g/cm³ |
| Ukuqina | 2500 Vickers ubulukhuni (500g umthwalo) |
| Grain SiZe | 2 ~ 10μm |
| I-Chemical Purity | 99.99995% |
| Amandla Okushisa | 640 J·kg-1·K-1 |
| I-Sublimation Temperature | 2700 ℃ |
| Amandla e-Flexural | 415 MPa RT 4-iphoyinti |
| I-Modulus Encane | 430 Gpa 4pt ukugoba, 1300℃ |
| I-Thermal Conductivity | 300Wm-1·K-1 |
| Ukunwetshwa kwe-Thermal(CTE) | 4.5×10-6K-1 |
