I-Silicon nitride iyi-ceramic empunga enokuqina okuphezulu kokuphuka, ukumelana nokushisa okuhle kakhulu, kanye nezakhiwo ezingenakungeneka ezinsimbi ezincibilikisiwe.
Isebenzisa lezi zici, isetshenziswa ezingxenyeni zenjini evuthayo yangaphakathi njengezingxenye zenjini yemoto, imibhobho ye-blowpipe yomshini wokushisela, njll., ikakhulukazi izingxenye ezidinga ukusetshenziswa ezindaweni ezinokhahlo njengokushisa ngokweqile.
Ngokumelana kwayo nokugqokwa okuphezulu namandla amakhulu emishini, ukusetshenziswa kwayo ezingxenyeni ze-roller, ama-shaft bearings ajikelezayo kanye nezingxenye ezisele zemishini yokukhiqiza i-semiconductor zikhula njalo.
| Izinto ezibonakalayo ze-silicon nitride materials | I-Silicon nitride (Sic) | |||
| Umbala | Mnyama | |||
| Okuqukethwe kwengxenye eyinhloko | - | |||
| Isici esiyinhloko | Isisindo esincane, ukumelana nokugqoka, ukumelana nokushisa okuphezulu. | |||
| Ukusetshenziswa Main | Izingxenye ezikwazi ukumelana nokushisa, izingxenye ezikwazi ukumelana nokushisa, izingxenye ezikwazi ukumelana nokugqwala. | |||
| Ukuminyana | g/cc | 3.2 | ||
| I-Hydroscopicity | % | 0 | ||
| Isici semishini | Vickers ubulukhuni | I-GPa | 13.9 | |
| Amandla okugoba | I-MPa | 500-700 | ||
| Amandla acindezelayo | I-MPa | 3500 | ||
| I-modulus yentsha | I-GPA | 300 | ||
| Isilinganiso sikaPoisson | - | 0.25 | ||
| Ukuqina kokuphuka | I-MPA · m1/2 | 5-7 | ||
| Isici esishisayo | I-coefficient yokunwetshwa komugqa | 40-400 ℃ | x10-6/℃ | 2.6 |
| I-Thermal conductivity | 20° | W/(m·k) | 15-20 | |
| Ukushisa okuqondile | J/(kg·k)x103 |
| ||
| Isici sikagesi | Ukumelana nevolumu | 20℃ | Ω·cm | >1014 |
| Amandla e-Dielectric |
| KV/mm | 13 | |
| I-Dielectric njalo |
| - |
| |
| I-Dielectric loss coefficient |
| x10-4 |
| |
| Isici samakhemikhali | I-nitric acid | 90℃ | Ukuncipha kwesisindo | <1.0<> |
| I-Vitriol | 95℃ | <0.4<> | ||
| I-sodium hydroxide | 80℃ | <3.6<> | ||
