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Izifudumezi ze-graphite zangokwezifiso ze-SiC zamawafer we-semiconductor

Izifudumezi ze-graphite zangokwezifiso ze-SiC zama-wafer we-semiconductor Isithombe Esifakiwe
  • Izifudumezi ze-graphite zangokwezifiso ze-SiC zamawafer we-semiconductor

Incazelo emfushane:

I-WeiTai Energy Technology Co., Ltd. ungumhlinzeki oholayo wezitsha zobumba ezithuthukisiwe ze-semiconductor futhi okuwukuphela komkhiqizi e-China ongahlinzeka ngasikhathi sinye ukuhlanzeka okuphezulu kwe-silicon carbide ceramic (ikakhulukaziKwenziwe kabusha SiC) kanye ne-CVD SiC enamathela.Ngaphezu kwalokho, inkampani yethu izibophezele nasezindaweni zobumba ezifana ne-alumina, i-aluminium nitride, i-zirconia, ne-silicon nitride, njll.


Imininingwane Yomkhiqizo

Omaka bomkhiqizo

Izici eziyinhloko ze-heater graphite:

1. ukufana kwesakhiwo sokushisa.

2. conductivity enhle kagesi kanye nomthwalo omkhulu kagesi.

3. ukumelana nokugqwala.

4. i-inoxidizability.

5. ukuhlanzeka kwamakhemikhali aphezulu.

6. amandla aphezulu emishini.

Inzuzo iyonga amandla, inani eliphakeme kanye nokugcinwa okuphansi.Singakhiqiza i-anti-oxidation nempilo ende ye-graphite crucible, isikhunta se-graphite nazo zonke izingxenye ze-graphite heater.

I-heater ye-graphite (4)

Imingcele eyinhloko ye-graphite heater

Ukucaciswa Kwezobuchwepheshe

I-Semicera-M3

Ukuminyana kwenqwaba (g/cm3)

≥1.85

Okuqukethwe komlotha (PPM)

≤500

Ukuqina Kwasogwini

≥45

Ukumelana Okuqondile (μ.Ω.m)

≤12

Amandla e-Flexural (Mpa)

≥40

Amandla Acindezelayo (Mpa)

≥70

Ubukhulu.Usayizi Wokusanhlamvu (μm)

≤43

I-Coefficient of Thermal Expansion Mm/°C

≤4.4*10-6
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