Izingxenye ze-MOCVD Epitaxial

Inqubo ehlanganisiwe ye-SiC ye-graphite base SiC Coated Graphite Carriers
I-GaN epitaxy esekelwe ku-silicon
I-Semiconductor SiC coated monocrystalline silicon epitaxial disk
I-Graphite Susceptor ene-Silicon Carbide Coating, 8 inch wafer Carrier
19 izingcezu 2 intshi graphite base MOCVD izingxenye zemishini
I-Graphite Susceptor ene-Silicon Carbide Coating, izingcezu ezi-6 6 inch wafer Carrier
I-Silicon Carbide Disc ye-MOCVD
I-Anti-oxidation high purity SiC coated MOCVD tray
Izingcezu ezingama-41 4 intshi ye-graphite base MOCVD izingxenye zemishini
36 izingcezu 4 amayintshi graphite base MOCVD izingxenye zemishini
I-epitaxy ye-LED eluhlaza/oluhlaza