I-Semiconductor SiC coated monocrystalline silicon epitaxial disk

Incazelo emfushane:

I-Semicera Energy Technology Co., Ltd. ingumphakeli ohamba phambili ogxile ekusetshenzisweni kwe-wafer kanye ne-semiconductor ethuthukisiwe.Sizinikezele ekuhlinzekeni ngemikhiqizo yekhwalithi ephezulu, ethembekile, nentsha ekukhiqizeni ama-semiconductor,imboni ye-photovoltaicnezinye izinkambu ezihlobene.

Umugqa wethu womkhiqizo uhlanganisa imikhiqizo ye-graphite ehlanganiswe ne-SiC/TaC nemikhiqizo yobumba, ehlanganisa izinto ezihlukahlukene ezifana ne-silicon carbide, i-silicon nitride, ne-aluminium oxide nokunye.

Njengomhlinzeki othembekile, siyakuqonda ukubaluleka kwezinto ezisetshenziswayo ohlelweni lokukhiqiza, futhi sizibophezele ekuletheni imikhiqizo ehlangabezana namazinga aphezulu ekhwalithi ukuze sifeze izidingo zamakhasimende ethu.

 

 

Imininingwane Yomkhiqizo

Omaka bomkhiqizo

Incazelo

Inkampani yethu ihlinzekaUkufakwa kwe-SiCinqubo yezinsizakalo nge-CVD indlela ebusweni be-graphite, i-ceramics nezinye izinto, ukuze amagesi akhethekile aqukethe i-carbon ne-silicon aphendule ekushiseni okuphezulu ukuze athole ukuhlanzeka okuphezulu kwama-molecule e-SiC, ama-molecule afakwe ebusweni bezinto ezimboziwe, akha.Isendlalelo sokuvikela se-SIC.

 
I-Monocrystalline silicon epitaxial sheet
I-PSS Etch Yenethiwekhi (3)

Izici Eziyinhloko

1. Ukumelana nokushisa okuphezulu kwe-oxidation:
ukumelana ne-oxidation kusekuhle kakhulu lapho izinga lokushisa liphezulu njenge-1600 C.
2. Ukuhlanzeka okuphezulu: okwenziwe yi-chemical vapor deposition ngaphansi kwesimo sokushisa okuphezulu kwe-chlorination.
3. Ukumelana nokuguguleka: ubulukhuni obuphezulu, indawo ehlangene, izinhlayiya ezinhle.
4. Ukumelana nokugqwala: i-asidi, i-alkali, usawoti kanye nama-organic reagents.

Ukucaciswa Okuyinhloko kwe-CVD-SIC Coating

Izakhiwo ze-SiC-CVD
Isakhiwo Sekristalu I-FCC β isigaba
Ukuminyana g/cm³ 3.21
Ukuqina Vickers ubulukhuni 2500
Usayizi Wokusanhlamvu μm 2~10
I-Chemical Purity % 99.99995
Amandla Okushisa J·kg-1 ·K-1 640
I-Sublimation Temperature 2700
Amandla E-Felexural I-MPa (RT 4-point) 415
I-Young's Modulus I-Gpa (4pt bend, 1300℃) 430
I-Thermal Expansion (CTE) 10-6K-1 4.5
I-Thermal conductivity (W/mK) 300
Semicera Indawo yokusebenza
Indawo yokusebenza ye-Semicera 2
Umshini wezinsimbi
Ukucutshungulwa kwe-CNN, ukuhlanza amakhemikhali, i-CVD coating
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