I-Silicon nitride ne-silicon carbide yizinhlanganisela eziqinile ze-covalent bond, zinezakhiwo ezifanayo zomzimba namakhemikhali, i-silicon nitride ehlanganiswe nemikhiqizo ye-silicon carbide enokumelana nokushisa okuphezulu, ukumelana nokugqwala, ukumelana nokugqoka, ukumelana nokuguguleka, ukumelana ne-oxidation kanye nochungechunge lwezakhiwo ezinhle kakhulu.I-Silicon nitride ne-silicon carbide njengezinto eziphikisayo ezisezingeni eliphakeme emikhathini ehlukahlukene izinga lokushisa elijwayelekile lingafinyelela ku-1500 ℃ noma ngaphezulu, lisetshenziswa kabanzi kuma-ceramics, i-non-ferrous metallurgy, insimbi nensimbi yensimbi, i-powder metallurgy, imboni yamakhemikhali nezinye izimboni.
I-Silicon nitride ehlanganiswe ne-silicon carbide material kanye nezinsimbi ezingenayo insimbi ayingeni, futhi inezici ezinhle zokuhlukanisa, ngakho-ke isetshenziswa kabanzi ekukhiqizeni izinsimbi ezingenayo insimbi njenge-aluminium, ithusi kanye ne-zinc, ikakhulukazi impahla efanelekile ukukhiqizwa kwezitini ze-electrolytic cell side lining.
| Into | Inkomba yezitini zomlilo | Incazelo ye-Kiln | Inkomba yomkhiqizo onobunjwa |
| I-porosity ebonakalayo(%） | <16 | <16 | <14 |
| Ukuminyana ngobuningi(g/cm3） | 2 2.65 | 2 2.65 | 2 2.68 |
| Amandla acindezelayo ekamelweni lokushisa(I-MPa） | 2 160 | 2 170 | 2 180 |
| Amandla okugoba ekamelweni lokushisa(1400X:） I-MPa | 2 40 | 2 45 | 2 45 |
| Amandla okugoba okushisa aphezulu(1400r） I-MPa | 2 50 | 2 50 | 2 50 |
| I-coefficient yokwanda kwe-thermal(Idatha ye-110CTC）xioVC | <4.18 | <4.18 | <4.18 |
| I-Thermal conductivity(1100C） | 216 | 2 16 | 216 |
| Ama-Refractories(°C ） | 1800 | 1800 | 1800 |
| 0.2 MPa Ukuthambisa izinga lokushisa ngaphansi komthwalo(X:） | 1600 | 1600 | > 1700 |
| Izinga lokushisa eliphezulu lokusebenza(°C） | 1550 | 1550 | 1550 |
