I-GaN epitaxy esekelwe ku-silicon

I-Silicon esekelwe ku-GaN epitaxy Isithombe Esifakiwe

Incazelo emfushane:

Le nkampani Semicera Energy Technology Co., Ltd. ungumhlinzeki oholayo wezitsha zobumba ezithuthukisiwe ze-semiconductor futhi okuwukuphela komkhiqizi e-China onganikeza kanyekanye i-silicon carbide ceramic ehlanzekile kakhulu (ikakhulukaziKwenziwe kabusha SiC) kanye ne-CVD SiC enamathela.Ngaphezu kwalokho, inkampani yethu izibophezele nasezindaweni zobumba ezifana ne-alumina, i-aluminium nitride, i-zirconia, ne-silicon nitride, njll.

Thumela i-imeyili kithi

Imininingwane Yomkhiqizo

Omaka bomkhiqizo

Incazelo Yomkhiqizo

Inkampani yethu ihlinzekaUkufakwa kwe-SiCinqubo yezinsizakalo nge-CVD indlela ebusweni be-graphite, i-ceramics nezinye izinto, ukuze amagesi akhethekile aqukethe i-carbon ne-silicon aphendule ekushiseni okuphezulu ukuze athole ukuhlanzeka okuphezulu kwama-molecule e-SiC, ama-molecule afakwe ebusweni bezinto ezimboziwe, akha.Isendlalelo sokuvikela se-SIC.

Izici eziyinhloko:

1. Ukumelana nokushisa okuphezulu kwe-oxidation:

ukumelana ne-oxidation kusekuhle kakhulu lapho izinga lokushisa liphezulu njenge-1600 C.

2. Ukuhlanzeka okuphezulu : kwenziwa ngokufakwa kwekhemikhali umhwamuko ngaphansi kwesimo sokushisa okuphezulu kwe-chlorination.

3. Ukumelana nokuguguleka: ubulukhuni obuphezulu, indawo ehlangene, izinhlayiya ezinhle.

4. Ukumelana nokugqwala: i-asidi, i-alkali, usawoti kanye nama-organic reagents.

Ukucaciswa Okuyinhloko kwe-CVD-SIC Coating

Izakhiwo ze-SiC-CVD
Isakhiwo Sekristalu	I-FCC β isigaba
Ukuminyana	g/cm³	3.21
Ukuqina	Vickers ubulukhuni	2500
Usayizi Wokusanhlamvu	μm	2~10
I-Chemical Purity	%	99.99995
Amandla Okushisa	J·kg-1 ·K-1	640
I-Sublimation Temperature	℃	2700
Amandla E-Felexural	I-MPa (RT 4-point)	415
I-Young's Modulus	I-Gpa (4pt bend, 1300℃)	430
I-Thermal Expansion (CTE)	10-6K-1	4.5
I-Thermal conductivity	(W/mK)	300