I-silicon nitride eboshwe nge-silicon carbide plate

I-silicon nitride eboshiwe ye-silicon carbide plate Isithombe esifakiwe

Incazelo emfushane:

I-Si3N4 eboshiwe i-SiC njengohlobo olusha lwe-refractory material, isetshenziswa kabanzi.Izinga lokushisa elifaka isicelo lingu-1400 C.Inokuqina okungcono kwe-thermal, ukushaqeka okushisayo, okungcono kune-plain refractory material.Iphinde ibe ne-anti-i-oxidation, ukumelana nokugqwala okuphezulu, ukumelana nokugqokwa, amandla okugoba aphezulu.Ingakwazi ukumelana nokugqwala nokukhuhla, ingabibikho ukushisa okungcolile nokusheshayo ngensimbi encibilikisiwe njenge-AL,Pb,Zn,Cu ect.

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Imininingwane Yomkhiqizo

Omaka bomkhiqizo

I-silicon nitride eboshwe nge-silicon carbide

I-Si3N4 eboshiwe ye-SiC Ceramic refractory material, ixutshwe nempushana ehlanzekile ye-SIC ephezulu kanye ne-Silicon powder, ngemva kwesifundo sokushibilika, ukusabela okufakwe ngaphansi kwe-1400 ~ 1500 ° C.Ngesikhathi se-sintering, ukugcwalisa i-Nitrogen ehlanzekile ephezulu esithandweni, khona-ke i-silicon izosabela ne-Nitrogen futhi ikhiqize i-Si3N4, Ngakho-ke i-Si3N4 eboshiwe ye-SiC impahla yenziwe nge-silicon nitride (23%) kanye ne-silicon carbide (75%) njengempahla eluhlaza. ,ixutshwe nezinto eziphilayo, futhi ibunjwe ngengxube, i-extrusion noma ukuthululwa, bese yenziwa ngemva kokumiswa kanye ne-nitrogenization.

Izici nezinzuzo:

1.Hukubekezelelana kwezinga lokushisa
I-2.Ukushisa okuphezulu kwe-thermal kanye nokumelana nokushaqeka
3.Amandla aphezulu emishini kanye nokumelana nemihuzuko
4.Ukusebenza kahle kwamandla kanye nokumelana nokugqwala

Sihlinzeka ngekhwalithi ephezulu nokunemba kwezingxenye zobumba ze-NSiC ezicutshungulwa

1.I-Slip casting
2.Ukukhipha
3.Uni Axial Pressing
4.Isostatic Pressing

I-Material Datasheet

>Ukwakheka Kwamakhemikhali	Sic	75%
	I-Si3N4	≥23%
	Khulula Si	0%
Ukuminyana ngobuningi (g/cm3)		2.70～2.80
I-porosity ebonakalayo (%)		12～15
Amandla okugoba ku-20 ℃(MPa)		180～190
Gobisa amandla ku-1200 ℃(MPa)		207
Gobisa amandla ku-1350 ℃(MPa)		210
Amandla acindezelayo ku-20 ℃(MPa)		580
I-Thermal conductivity ku-1200 ℃(w/mk)		19.6
I-thermal expansion coefficient ku-1200 ℃(x 10-6/C)		4.70
Ukumelana nokushaqeka okushisayo		Kuhle kakhulu
Ubukhulu.izinga lokushisa (℃)		1600

I-silicon nitride ehlanganiswe ne-silicon carbide plate1

I-silicon nitride eboshwe nge-silicon carbide plate

I-WeiTai Energy Technology Co., Ltd. ingumhlinzeki oholayo wezitsha zobumba ezithuthukisiwe zesemiconductor futhi okuwukuphela komkhiqizi e-China ongahlinzeka ngasikhathi sinye ukuhlanzeka okuphezulu kwe-silicon carbide ceramic (ikakhulukazi i-Recrystallized SiC) kanye ne-CVD SiC coating.Ngaphezu kwalokho, inkampani yethu izibophezele nasezindaweni zobumba ezifana ne-alumina, i-aluminium nitride, i-zirconia, ne-silicon nitride, njll.

Imikhiqizo yethu eyinhloko ihlanganisa: i-silicon carbide etching disc, i-silicon carbide boat tow, isikebhe se-silicon carbide wafer (Photovoltaic&Semiconductor), ishubhu le-silicon carbide furnace, i-silicon carbide cantilever paddle, i-silicon carbide chucks, i-silicon carbide beam, kanye ne-CVD SiC coating kanye ne-TaC enamathela.Imikhiqizo esetshenziswa kakhulu ezimbonini ze-semiconductor kanye ne-photovoltaic, njengemishini yokukhula kwekristalu, i-epitaxy, i-etching, ukupakisha, i-coating ne-diffusion furnaces, njll.

Inkampani yethu inemishini ephelele yokukhiqiza efana nokubumba, i-sintering, ukucubungula, imishini yokuhlanganisa, njll., engaqedela zonke izixhumanisi ezidingekayo zokukhiqiza umkhiqizo futhi ibe nokulawulwa okuphezulu kwekhwalithi yomkhiqizo;Uhlelo oluhle kakhulu lokukhiqiza lungakhethwa ngokuya ngezidingo zomkhiqizo, okuholela ezindleko eziphansi kanye nokuhlinzeka amakhasimende ngemikhiqizo yokuncintisana kakhulu;Singakwazi ukuhlela ukukhiqizwa ngendlela eguquguqukayo nangempumelelo ngokusekelwe kuzidingo zokulethwa kwe-oda futhi ngokuhambisana nezinhlelo zokuphatha ama-oda aku-inthanethi, sinikeze amakhasimende isikhathi sokulethwa esisheshayo nesiqinisekisiwe.