I-silicon nitride eboshwe nge-silicon carbide square beam

I-silicon nitride eboshwe nge-silicon carbide

I-Si3N4 eboshiwe ye-SiC Ceramic refractory material, ixutshwe nempushana ehlanzekile ye-SIC ephezulu kanye ne-Silicon powder, ngemva kwesifundo sokushibilika, ukusabela okufakwe ngaphansi kwe-1400 ~ 1500 ° C.Ngesikhathi se-sintering, ukugcwalisa i-Nitrogen ehlanzekile ephezulu esithandweni, khona-ke i-silicon izosabela ne-Nitrogen futhi ikhiqize i-Si3N4, Ngakho-ke i-Si3N4 eboshiwe ye-SiC impahla yenziwe nge-silicon nitride (23%) kanye ne-silicon carbide (75%) njengempahla eluhlaza. ,ixutshwe nezinto eziphilayo, futhi ibunjwe ngengxube, i-extrusion noma ukuthululwa, bese yenziwa ngemva kokumiswa kanye ne-nitrogenization.

Izici nezinzuzo:

1.Hukubekezelelana kwezinga lokushisa
I-2.Ukushisa okuphezulu kwe-thermal kanye nokumelana nokushaqeka
3.Amandla aphezulu emishini kanye nokumelana nemihuzuko
4.Ukusebenza kahle kwamandla kanye nokumelana nokugqwala

Sihlinzeka ngekhwalithi ephezulu nokunemba kwezingxenye zobumba ze-NSiC ezicutshungulwa

1.I-Slip casting
2.Ukukhipha
3.Uni Axial Pressing
4.Isostatic Pressing

I-Material Datasheet