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Isikebhe esizinzile se-semiconductor se-silicon carbide, isithwali se-wafer

Isikebhe se-semiconductor ye-silicon carbide yekhwalithi ezinzile, isithwali se-wafer Isithombe Esifakiwe
  • Isikebhe esizinzile se-semiconductor se-silicon carbide, isithwali se-wafer

Incazelo emfushane:

I-WeiTai Energy Technology Co., Ltd. ingumphakeli ohamba phambili ogxile ekusetshenzisweni kwe-wafer kanye ne-semiconductor ethuthukisiwe.Sizinikezele ekuhlinzekeni ngemikhiqizo yekhwalithi ephezulu, ethembekile, nentsha ekukhiqizeni ama-semiconductor,imboni ye-photovoltaicnezinye izinkambu ezihlobene.

Umugqa wethu womkhiqizo uhlanganisa imikhiqizo ye-graphite ehlanganisiwe ye-SiC/TaC nemikhiqizo yobumba, ehlanganisa izinto ezihlukahlukene ezifana ne-silicon carbide, i-silicon nitride, ne-aluminium oxide nokunye.

Njengomhlinzeki othembekile, siyakuqonda ukubaluleka kwezinto ezisetshenziswayo enqubweni yokukhiqiza, futhi sizibophezele ekuletheni imikhiqizo ehlangabezana namazinga aphezulu ekhwalithi ukuze sifeze izidingo zamakhasimende ethu.


Imininingwane Yomkhiqizo

Omaka bomkhiqizo

I-Silicon carbide iwuhlobo olusha lwe-ceramics olusebenza ngezindleko eziphakeme kanye nezakhiwo ezinhle kakhulu zezinto ezibonakalayo.Ngenxa yezici ezinjengamandla aphezulu nobulukhuni, ukumelana nokushisa okuphezulu, ukuguquguquka okukhulu kokushisa kanye nokumelana nokubola kwamakhemikhali, i-Silicon Carbide icishe imelane nayo yonke into yamakhemikhali.Ngakho-ke, i-SiC isetshenziswa kakhulu ezimayini zikawoyela, amakhemikhali, imishini kanye ne-airspace, ngisho namandla enuzi kanye nezempi banezidingo zabo ezikhethekile ku-SIC.Olunye uhlelo olujwayelekile esingalunikeza izindandatho zophawu lwepompo, i-valve nezikhali zokuzivikela njll.

Siyakwazi ukuklama nokwenza ngokuvumelana nobukhulu bakho obuthile ngekhwalithi enhle nesikhathi sokuletha esinengqondo.

isikebhe se-silicon carbide (5)

Aokuhle:

Ukumelana nokushisa okuphezulu kwe-oxidation

Ukumelana ne-Corrosion okuhle kakhulu

Ukumelana okuhle kwe-Abrasion

I-coefficient ephezulu ye-conductivity yokushisa
Ukuzithambisa, ukuminyana okuphansi
Ukuqina okuphezulu
Umklamo ngokwezifiso.

Izicelo:

-Inkundla engagqoki: ukubhodloza, ipuleti, umlomo wombhobho wesandblasting, umugqa wesishingishane, umgqomo wokugaya, njll.

-Inkundla Yokushisa Ephakeme: I-siC Slab, Ishubhu Lokucisha Isithando, Ishubhu elikhazimulayo, i-crucible, i-Heating Element, i-roller, i-Beam, i-Heat Exchanger, i-Cold Air Pipe, i-Burner Nozzle, i-Thermocouple Protection Tube, isikebhe se-SiC, i-Kiln car Structure, i-Setter, njll.

-Inkundla Yezempi Yezinhlamvu

-I-Silicon Carbide Semiconductor: Isikebhe se-SiC wafer, i-sic chuck, i-sic paddle, i-sic cassette, i-sic diffusion tube, i-wafer fork, ipuleti lokumunca, umgwaqo, njll.

-I-Silicon Carbide Seal Field: zonke izinhlobo zendandatho yokubeka uphawu, ukuthwala, i-bushing, njll.

-Inkambu ye-Photovoltaic: I-Cantilever Paddle, i-Grinding Barrel, i-Silicon Carbide Roller, njll.

-I-Lithium Battery Field

isikebhe se-silicon carbide wafer (1)

Amapharamitha wobuchwepheshe:

图片2

I-Material Datasheet

材料Okubalulekile

I-R-SiC

使用温度Izinga lokushisa lokusebenza (°C)

1600°C (氧化气氛Imvelo ene-oxidizing)

1700°C (还原气氛Ukunciphisa imvelo)

I-SiC含量Okuqukethwe kwe-SiC (%)

> 99

自由Si含量Okuqukethwe kwamahhala kwe-Si (%)

<0.1

体积密度Ukuminyana ngobuningi (g/cm3)

2.60-2.70

气孔率I-porosity ebonakalayo (%)

< 16

抗压强度Amandla okuchoboza (MPa)

> 600

常温抗弯强度Amandla okugoba okubandayo (MPa)

80-90 (20°C)

高温抗弯强度Amandla okugoba ashisayo (MPa)

90-100 (1400°C)

热膨胀系数

I-Thermal expansion coefficient @1500°C (10-6/°C)

4.70

导热系数I-Thermal conductivity @1200°C (W/m•K)

23

杨氏模量I-Elastic modulus (GPa)

240

抗热震性Ukumelana nokushaqeka okushisayo

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