I-3C-SiC Wafer Substrate

Ama-Semicera 3C-SiC Wafer Substrates akhiwe ukuze anikeze inkundla eqinile yama-electronics wamandla wesizukulwane esilandelayo kanye namadivayisi anemvamisa ephezulu. Ngezakhiwo ezishisayo eziphakeme nezici zikagesi, lawa ma-substrates aklanyelwe ukuhlangabezana nezidingo ezidingekayo zobuchwepheshe besimanje.

Isakhiwo se-3C-SiC (Cubic Silicon Carbide) se-Semicera Wafer Substrates sinikeza izinzuzo ezihlukile, okuhlanganisa ukuqhutshwa kwe-thermal okuphezulu kanye ne-coefficient ephansi yokwandisa okushisayo uma kuqhathaniswa nezinye izinto ze-semiconductor. Lokhu kubenza babe ukukhetha okuhle kakhulu kumadivayisi asebenza ngaphansi kwamazinga okushisa aphezulu nezimo zamandla aphezulu.

Ngevoltheji ephezulu yokuphuka kukagesi nokuzinza kwamakhemikhali okuphakeme, i-Semicera 3C-SiC Wafer Substrates iqinisekisa ukusebenza okuhlala isikhathi eside nokwethembeka. Lezi zakhiwo zibalulekile ezinhlelweni zokusebenza ezifana ne-radar yefrikhwensi ephezulu, ukukhanya kwe-solid-state, neziguquli zamandla, lapho ukusebenza kahle nokuqina kubaluleke kakhulu.

Ukuzibophezela kwe-Semicera kwikhwalithi kubonakala enqubweni yokukhiqiza ecophelelayo ye-3C-SiC Wafer Substrates yabo, eqinisekisa ukufana nokuvumelana kuwo wonke amaqoqo. Lokhu kunemba kunomthelela ekusebenzeni okuphelele nasekuphileni isikhathi eside kwamadivayisi kagesi akhelwe phezu kwawo.

Ngokukhetha ama-Semicera 3C-SiC Wafer Substrates, abakhiqizi bathola ukufinyelela ezintweni ezisezingeni eliphezulu ezivumela ukuthuthukiswa kwezingxenye ze-elekthronikhi ezincane, ezisheshayo nezisebenza kahle kakhulu. I-Semicera iyaqhubeka nokusekela ukusungulwa kwezobuchwepheshe ngokunikeza izixazululo ezinokwethenjelwa ezihlangabezana nezidingo eziguqukayo zemboni ye-semiconductor.