4″ 6″ 8″ I-Conductive & Semi-insulating Substrates

Incazelo emfushane:

I-Semicera izibophezele ekuhlinzekeni ngama-semiconductor substrates ekhwalithi ephezulu, okuyizinto ezibalulekile zokukhiqiza idivayisi ye-semiconductor. Ama-substrates ethu ahlukaniswe abe izinhlobo ze-conductive kanye ne-semi-insulating ukuze ahlangabezane nezidingo zezinhlelo zokusebenza ezahlukene. Ngokuqonda ngokujulile izakhiwo zikagesi zama-substrates, i-Semicera ikusiza ukuthi ukhethe izinto ezifanele kakhulu ukuze uqinisekise ukusebenza okuhle kakhulu ekukhiqizeni idivayisi. Khetha i-Semicera, khetha ikhwalithi enhle kakhulu egcizelela ukuthembeka nokuqamba izinto ezintsha.

Thumela i-imeyili kithi

Imininingwane Yomkhiqizo

Omaka bomkhiqizo

I-Silicon carbide (SiC) i-crystal material eyodwa inobubanzi begebe lebhande elikhulu (~Si izikhathi ezi-3), ukuguquguquka okuphezulu kwe-thermal (~Si izikhathi ezingu-3.3 noma izikhathi ze-GaAs izikhathi ezingu-10), izinga lokufuduka kwe-electron ephezulu (~Si izikhathi ezingu-2.5), ukuphuka okuphezulu kukagesi inkambu (~Si 10 izikhathi noma GaAs izikhathi 5) kanye nezinye izici ezivelele.

Izinto ze-semiconductor yesizukulwane sesithathu ikakhulukazi zifaka i-SiC, i-GaN, idayimane, njll., ngoba ububanzi begebe lebhendi yayo (Isb) bukhulu noma bulingana nama-electron volts (eV) angu-2.3 (eV), owaziwa nangokuthi i-wide band gap semiconductor materials. Uma kuqhathaniswa nezinto zokwakha ze-semiconductor yesizukulwane sokuqala nesesibili, izinto zokwakha ze-semiconductor yesizukulwane sesithathu zinezinzuzo zokubamba okuphezulu okushisayo, insimu kagesi ewohlokayo, izinga eliphezulu lokufuduka kwama-electron namandla aphezulu okubopha, okungahlangabezana nezidingo ezintsha zobuchwepheshe besimanje be-elekthronikhi izinga lokushisa, amandla aphezulu, umfutho ophezulu, imvamisa ephezulu kanye nokumelana nemisebe nezinye izimo ezinzima. Inamathemba okusebenza abalulekile emikhakheni yezokuvikela kuzwelonke, ezondiza, i-aerospace, ukuhlola uwoyela, ukugcinwa kwamehlo, njll., futhi inganciphisa ukulahleka kwamandla ngaphezu kuka-50% ezimbonini zamasu eziningi ezifana nezokuxhumana nge-broadband, amandla elanga, ukukhiqiza izimoto, ukukhanya kwe-semiconductor, kanye negridi ehlakaniphile, futhi kunganciphisa umthamo wezinto zokusebenza ngamaphesenti angaphezu kwama-75, okubaluleke kakhulu ekuthuthukisweni kwesayensi yabantu nobuchwepheshe.

Amandla we-Semicera anganikeza amakhasimende izinga eliphezulu le-Conductive (Conductive), i-Semi-insulating (Semi-insulating), i-HPSI (i-High Purity semi-insulating) i-silicon carbide substrate; Ngaphezu kwalokho, singahlinzeka amakhasimende ngamashidi e-epitaxial e-silicon carbide e-homogeneous and heterogeneous; Singakwazi futhi ukwenza ngokwezifiso ishidi le-epitaxial ngokuya ngezidingo ezithile zamakhasimende, futhi abukho ubuncane be-oda lenani.

IMICIMBI YOKUFAKA

*n-Pm=n-type Pm-Grade,n-Ps=n-type Ps-Grade,Sl=Semi-lnsulation

Into	8-intshi	6-intshi			4-intshi
Into	nP	n-Pm	n-IHu	SI	SI
I-TTV(GBIR)	≤6um	≤6um
Umnsalo(GF3YFCD)-Inani Eliphelele	≤15μm	≤15μm	≤25μm		≤15μm
I-Warp(GF3YFER)	≤25μm	≤25μm	≤40μm		≤25μm
I-LTV(SBIR)-10mmx10mm	<2μm
I-Wafer Edge	Beveling

UBUHLUNGU QEDA

*n-Pm=n-type Pm-Grade,n-Ps=n-type Ps-Grade,Sl=Semi-Insulating

ltem	8-intshi	6-intshi			4-intshi
	nP	n-Pm	n-IHu	SI	SI
I-Surface Qeda	I-Double side Optical Polish, i-Si- Face CMP
I-SurfaceRoughness	(10um x 10um) I-Si-FaceRa≤0.2nm I-C-Face Ra≤ 0.5nm			(5umx5um) I-Si-Face Ra≤0.2nm I-C-Face Ra≤0.5nm
Ama-Edge Chips	Akukho okuvunyelwe (ubude nobubanzi≥0.5mm)
Izindebe	Akukho Okuvunyelwe
Imihuzuko(Si-Face)	Ubuningi.≤5,Okuqoqekile Ubude≤0.5× ububanzi bewafa	Ubuningi.≤5,Okuqoqekile Ubude≤0.5× ububanzi bewafa			Ubuningi.≤5,Okuqoqekile Ubude≤0.5× ububanzi bewafa
Imifantu	Akukho Okuvunyelwe
Ukukhishwa komkhawulo	3mm