I-Semicera's 4", 6", kanye ne-8" N-uhlobo lwe-SiC Ingots imelela impumelelo ezintweni ze-semiconductor, eziklanyelwe ukuhlangabezana nezidingo ezikhulayo zamasistimu esimanje kagesi namandla. Lezi zingo zihlinzeka ngesisekelo esiqinile nesizinzile sezinhlelo zokusebenza ezihlukahlukene ze-semiconductor, eziqinisekisa ukusebenza kahle. ukusebenza nokuphila isikhathi eside.
Ama-ingots wethu we-SiC yohlobo lwe-N akhiqizwa kusetshenziswa izinqubo zokukhiqiza ezithuthukisiwe ezithuthukisa ukusebenza kwawo kagesi kanye nokuzinza kwe-thermal. Lokhu kuzenza zibe zilungele izinhlelo zokusebenza zamandla aphezulu kanye nama-high-frequency, njengama-inverter, ama-transistors, namanye amadivaysi kagesi kagesi lapho ukusebenza kahle nokuthembeka kubaluleke kakhulu.
I-doping enembayo yalezi zingothi iqinisekisa ukuthi zinikeza ukusebenza okungaguquki nokuphindaphindayo. Lokhu kuvumelana kubalulekile konjiniyela nabakhiqizi abacindezela imingcele yobuchwepheshe emikhakheni efana ne-aerospace, izimoto, kanye nezokuxhumana. Ama-ingots we-Semicera's SiC anika amandla ukukhiqizwa kwamadivayisi asebenza kahle ngaphansi kwezimo ezibucayi.
Ukukhetha ama-SiC Ingots e-Semicera ohlobo lwe-N kusho ukuhlanganisa izinto ezikwazi ukuphatha amazinga okushisa aphezulu kanye nokulayishwa kukagesi okuphezulu kalula. Lawa ma-ingots afaneleka ngokukhethekile ekudaleni izingxenye ezidinga ukuphathwa okushisayo okuhle kakhulu nokusebenza kwe-high-frequency, njengama-amplifiers e-RF namamojula wamandla.
Ngokukhetha ama-SiC Ingots e-Semicera's 4", 6", kanye no-8" N-type SiC, utshala imali emkhiqizweni ohlanganisa izakhiwo zebalulekile ezibonakalayo nokunemba nokuthembeka okufunwa ubuchwepheshe obusezingeni eliphezulu be-semiconductor. I-Semicera iyaqhubeka nokuhola imboni ukuhlinzeka ngezixazululo ezintsha eziqhuba intuthuko yokwenziwa kwemishini kagesi.
| Izinto | Ukukhiqiza | Ucwaningo | Dummy |
| I-Crystal Parameters | |||
| I-Polytype | 4H | ||
| Iphutha lokuma kobuso | <11-20 >4±0.15° | ||
| Amapharamitha kagesi | |||
| I-Dopant | n-uhlobo lweNitrojeni | ||
| Ukungazweli | 0.015-0.025ohm · cm | ||
| Mechanical Parameters | |||
| Ububanzi | 150.0±0.2mm | ||
| Ubukhulu | 350±25 μm | ||
| Umumo oyisicaba oyinhloko | [1-100]±5° | ||
| Ubude obuyisicaba obuyisisekelo | 47.5±1.5mm | ||
| Ifulethi lesibili | Lutho | ||
| I-TTV | ≤5 μm | ≤10 μm | ≤15 μm |
| I-LTV | ≤3 μm(5mm*5mm) | ≤5 μm(5mm*5mm) | ≤10 μm(5mm*5mm) |
| Khothama | -15μm ~ 15μm | -35μm ~ 35μm | -45μm ~ 45μm |
| I-Wap | ≤35 μm | ≤45 μm | ≤55 μm |
| Front(Si-face) roughness(AFM) | I-Ra≤0.2nm (5μm*5μm) | ||
| Isakhiwo | |||
| Ukuminyana kwe-Micropipe | <1 eya/cm2 | <10 kwe/cm2 | <15 kwe/cm2 |
| Ukungcola kwensimbi | ≤5E10 ama-athomu/cm2 | NA | |
| I-BPD | ≤1500 i-e/cm2 | ≤3000 i-e/cm2 | NA |
| I-TSD | ≤500 i-e/cm2 | ≤1000 i-e/cm2 | NA |
| Ikhwalithi Yangaphambili | |||
| Ngaphambili | Si | ||
| Ukuqedwa kobuso | I-Si-face CMP | ||
| Izinhlayiya | ≤60ea/wafer (usayizi≥0.3μm) | NA | |
| Ukuklwebheka | ≤5ea/mm. Ubude obuqongelelwe ≤Ububanzi | Ubude obuqongelelwe≤2*Ububanzi | NA |
| Ikhasi eliwolintshi/imigodi/amabala/ama-striations/ imifantu/ukungcola | Lutho | NA | |
| Ama-Edge chips/indents/fracture/hex plate | Lutho | ||
| Izindawo ze-Polytype | Lutho | Indawo eqoqiwe≤20% | Indawo eqoqiwe≤30% |
| Ukumaka kwe-laser yangaphambili | Lutho | ||
| Ikhwalithi Emuva | |||
| Emuva ekupheleni | C-face CMP | ||
| Ukuklwebheka | ≤5ea/mm, Ubude obuqongelelayo≤2*Ububanzi | NA | |
| Ukukhubazeka kwasemuva (ama-edge chips/indents) | Lutho | ||
| Ukuhwalala emuva | I-Ra≤0.2nm (5μm*5μm) | ||
| Ukumaka kwe-laser emuva | 1 mm (kusuka emaphethelweni aphezulu) | ||
| Umphetho | |||
| Umphetho | I-Chamfer | ||
| Ukupakisha | |||
| Ukupakisha | I-Epi-ilungile ngokufakwa kwe-vacuum Ukupakishwa kwekhasethi le-multi-wafer | ||
| *Amanothi: "NA" kusho ukuthi asikho isicelo Izinto ezingashiwongo zingabhekisa ku-SEMI-STD. | |||
