I-Semicera's 4" 6" Semi-Insulating SiC Substrate iwumsebenzi wekhwalithi ephezulu oklanyelwe ukuhlangabezana nezimfuneko eziqinile ze-RF kanye nezinhlelo zokusebenza zedivayisi yamandla. I-substrate ihlanganisa ukuguquguquka okuhle kakhulu kwe-thermal kanye ne-voltage ephezulu yokuwohloka kwe-silicon carbide enezindawo zokuvikela i-semi-insulating, ikwenze kube yisinqumo esihle sokuthuthukisa amadivaysi e-semiconductor athuthukile.
4" 6" I-Semi-Insulating SiC Substrate yakhiwe ngokucophelela ukuze kuqinisekiswe izinto ezihlanzekile nokusebenza okungaguquguquki kwe-semi-insulating. Lokhu kuqinisekisa ukuthi i-substrate ihlinzeka ngokuhlukaniswa kukagesi okudingekayo kumadivayisi e-RF njengama-amplifiers nama-transistors, kuyilapho ihlinzeka ngokusebenza kahle kokushisa okudingekayo kwezinhlelo zokusebenza zamandla aphezulu. Umphumela uba i-substrate eguquguqukayo engasetshenziswa ezinhlobonhlobo zemikhiqizo ye-elekthronikhi esebenza kahle kakhulu.
I-Semicera ibona ukubaluleka kokuhlinzeka ngama-substrates athembekile, angenasici ezinhlelweni ezibucayi ze-semiconductor. I-4" 6" Semi-Insulating SiC Substrate yethu ikhiqizwa kusetshenziswa amasu okukhiqiza athuthukile anciphisa ukonakala kwekristalu futhi athuthukise ukufana kwezinto. Lokhu kwenza umkhiqizo ukwazi ukusekela ukwenziwa kwamadivayisi ngokusebenza okuthuthukisiwe, ukuzinza, nokuphila konke.
Ukuzibophezela kwe-Semicera kwikhwalithi kuqinisekisa ukuthi i-4" 6" Semi-Insulating SiC Substrate yethu iletha ukusebenza okuthembekile nokungaguquguquki kuzo zonke izinhlobo zezinhlelo zokusebenza. Noma ngabe uthuthukisa amadivaysi anemvamisa ephezulu noma izixazululo zamandla awonga amandla, ama-substrates ethu e-SiC afaka isisekelo sempumelelo yesizukulwane esilandelayo sama-electronics.
Imingcele eyisisekelo
| Usayizi | 6-intshi | 4-intshi |
| Ububanzi | 150.0mm+0mm/-0.2mm | 100.0mm+0mm/-0.5mm |
| I-Surface Orientation | {0001}±0.2° | |
| Isisekelo se-Flat Orientation | / | <1120>±5° |
| I-SecondaryFlat Orientation | / | I-silicon ibheke phezulu:90° CW ukusuka ku-Prime flat士5° |
| Ubude Befulethi obuyisisekelo | / | 32.5 mm 士2.0 mm |
| Ubude Befulethi besibili | / | 18.0 mm 士2.0 mm |
| I-Notch Orientation | <1100>±1.0° | / |
| I-Notch Orientation | 1.0mm+0.25 mm/-0.00 mm | / |
| I-Notch Angle | 90°+5°/-1° | / |
| Ubukhulu | 500.0um 士25.0um | |
| Uhlobo Lokuqhuba | I-Semi-insulating | |
Ulwazi lwekhwalithi ye-Crystal
| ltem | 6-intshi | 4-intshi |
| Ukungazweli | ≥1E9Q·cm | |
| I-Polytype | Akukho okuvunyelwe | |
| I-Micropipe Density | ≤0.5/cm2 | ≤0.3/cm2 |
| I-Hex Plates ngokukhanya okuphezulu kakhulu | Akukho okuvunyelwe | |
| I-Visual Carbon Inclusions ngokuphezulu | Indawo eqoqiwe≤0.05% | |
Ukungazweli - Kuhlolwe ukumelana neshidi lokungaxhunywanga.
I-Micropipe Density
