4 Intshi High Purity Semi-Insulating HPSI SiC Double-side Polished Wafer Substrate

Incazelo emfushane:

I-Semicera's 4 Inch High Purity Semi-Insulating (HPSI) SiC Double-side Polished Wafer Substrates yenziwe ngokunemba ukuze isebenze ngokusezingeni eliphezulu. Lawa mawafa ahlinzeka ngokusebenza okuhle kakhulu kwe-thermal kanye nokufakwa kukagesi, okulungele izinhlelo zokusebenza ezithuthukisiwe ze-semiconductor. Themba i-Semicera ngekhwalithi engenakuqhathaniswa nokuqanjwa okusha kubuchwepheshe be-wafer.

Thumela i-imeyili kithi

Imininingwane Yomkhiqizo

Omaka bomkhiqizo

I-Semicera's 4 Inch High Purity Semi-Insulating (HPSI) SiC Double-side Polished Wafer Substrates yakhelwe ukuhlangabezana nezidingo eziqondile zemboni ye-semiconductor. Lawa ma-substrates aklanywe ngendlela ethambile futhi emsulwa, enikeza inkundla efanelekile yezinto zikagesi ezisezingeni eliphezulu.

Lawa mawafa e-HPSI SiC ahlukaniswa ngokuguquguquka kwawo okushisayo okuphezulu kanye nezakhiwo zokufakwa kukagesi, okuwenza abe ukukhetha okuhle kakhulu kwezinhlelo zokusebenza ze-high-frequency namandla aphezulu. Inqubo yokupholisha ezinhlangothini ezimbili iqinisekisa ubuhwaqane obuncane bendawo, obubalulekile ekuthuthukiseni ukusebenza kwedivayisi nokuhlala isikhathi eside.

Ukuhlanzeka okuphezulu kwamawafa e-Semicera's SiC kunciphisa amaphutha nokungcola, okuholela kumazinga esivuno aphezulu nokuthembeka kwedivayisi. Lawa ma-substrates afanele uhla olubanzi lwezinhlelo zokusebenza, okuhlanganisa amadivaysi e-microwave, amandla kagesi, nobuchwepheshe be-LED, lapho ukunemba nokuqina kubalulekile.

Ngokugxila emisha nekhwalithi, i-Semicera isebenzisa amasu okukhiqiza athuthukile ukuze ikhiqize ama-wafers ahlangabezana nezidingo eziqinile zama-electronics wesimanje. Ukupholisha okunezinhlangothi ezimbili akugcini nje ngokuthuthukisa amandla emishini kodwa futhi kusiza ukuhlanganiswa okungcono nezinye izinto ze-semiconductor.

Ngokukhetha i-Semicera's 4 Inch High Purity Semi-Insulating HPSI SiC Double-side Polished Wafer Substrates, abakhiqizi bangakwazi ukusebenzisa izinzuzo zokuphatha okushisayo okuthuthukisiwe kanye nokufakwa kukagesi, okuvula indlela yokuthuthukiswa kwemishini kagesi esebenza kahle futhi enamandla. I-Semicera iyaqhubeka nokuhola imboni ngokuzibophezela kwayo ekuthuthukisweni kwekhwalithi nezobuchwepheshe.

Izinto	Ukukhiqiza	Ucwaningo	Dummy
I-Crystal Parameters
I-Polytype	4H
Iphutha lokuma kobuso	<11-20 >4±0.15°
Amapharamitha kagesi
I-Dopant	n-uhlobo lweNitrojeni
Ukungazweli	0.015-0.025ohm · cm
Mechanical Parameters
Ububanzi	150.0±0.2mm
Ubukhulu	350±25 μm
Umumo oyisicaba oyinhloko	[1-100]±5°
Ubude obuyisicaba obuyisisekelo	47.5±1.5mm
Ifulethi lesibili	Lutho
I-TTV	≤5 μm	≤10 μm	≤15 μm
I-LTV	≤3 μm(5mm*5mm)	≤5 μm(5mm*5mm)	≤10 μm(5mm*5mm)
Khothama	-15μm ~ 15μm	-35μm ~ 35μm	-45μm ~ 45μm
I-Wap	≤35 μm	≤45 μm	≤55 μm
Front(Si-face) roughness(AFM)	I-Ra≤0.2nm (5μm*5μm)
Isakhiwo
Ukuminyana kwe-Micropipe	<1 eya/cm2	<10 kwe/cm2	<15 kwe/cm2
Ukungcola kwensimbi	≤5E10 ama-athomu/cm2		NA
I-BPD	≤1500 i-e/cm2	≤3000 i-e/cm2	NA
I-TSD	≤500 i-e/cm2	≤1000 i-e/cm2	NA
Ikhwalithi Yangaphambili
Ngaphambili	Si
Ukuqedwa kobuso	I-Si-face CMP
Izinhlayiya	≤60ea/wafer (usayizi≥0.3μm)	NA
Ukuklwebheka	≤5ea/mm. Ubude obuqongelelwe ≤Ububanzi	Ubude obuqongelelwe≤2*Ububanzi	NA
Ikhasi eliwolintshi/imigodi/amabala/imifantu/ukungcola	Lutho		NA
Ama-Edge chips/indents/fracture/hex plate	Lutho
Izindawo ze-Polytype	Lutho	Indawo eqoqiwe≤20%	Indawo eqoqiwe≤30%
Ukumaka kwe-laser yangaphambili	Lutho
Ikhwalithi Emuva
Emuva ekupheleni	C-face CMP
Ukuklwebheka	≤5ea/mm,Ubude obuqongelelayo≤2*Ububanzi	NA
Ukukhubazeka kwasemuva (ama-edge chips/indents)	Lutho
Ukuhwalala emuva	I-Ra≤0.2nm (5μm*5μm)
Ukumaka kwe-laser emuva	1 mm (kusuka emaphethelweni aphezulu)
Umphetho
Umphetho	I-Chamfer
Ukupakisha
Ukupakisha	I-Epi-ilungile ngokufakwa kwe-vacuum Ukupakishwa kwekhasethi le-multi-wafer
*Amanothi: "NA" kusho ukuthi asikho isicelo Izinto ezingashiwongo zingabhekisa ku-SEMI-STD.