4 Intshi SiC Substrate N-uhlobo

4 Intshi ye-SiC Substrate N-uhlobo lwesithombe esifakiwe

Incazelo emfushane:

I-Semicera inikeza ububanzi obubanzi be-4H-8H SiC wafers. Iminyaka eminingi, besingumkhiqizi kanye nomphakeli wemikhiqizo ezimbonini ze-semiconductor kanye ne-photovoltaic. Imikhiqizo yethu eyinhloko ihlanganisa: amapuleti e-silicon carbide etch, ama-silicon carbide boat trailer, izikebhe ze-silicon carbide wafer (PV & Semiconductor), amashubhu e-silicon carbide furnace, ama-silicon carbide cantilever paddles, ama-silicon carbide chucks, imishayo ye-silicon carbide, kanye ne-CVD ne-SiC coating. I-TaC coatings. Ihlanganisa izimakethe eziningi zaseYurophu nezaseMelika. Sibheke ngabomvu ukuba uzakwethu wesikhathi eside e-China.

Thumela i-imeyili kithi

Imininingwane Yomkhiqizo

Omaka bomkhiqizo

I-Silicon carbide (SiC) i-crystal material eyodwa inobubanzi begebe lebhande elikhulu (~Si izikhathi ezi-3), ukuguquguquka okuphezulu kwe-thermal (~Si izikhathi ezingu-3.3 noma izikhathi ze-GaAs izikhathi ezingu-10), izinga lokufuduka kwe-electron ephezulu (~Si izikhathi ezingu-2.5), ukuphuka okuphezulu kukagesi inkambu (~Si 10 izikhathi noma GaAs izikhathi 5) kanye nezinye izici ezivelele.

Amandla we-Semicera anganikeza amakhasimende izinga eliphezulu le-Conductive (Conductive), i-Semi-insulating (Semi-insulating), i-HPSI (i-High Purity semi-insulating) i-silicon carbide substrate; Ngaphezu kwalokho, singahlinzeka amakhasimende ngamashidi e-epitaxial e-silicon carbide e-homogeneous and heterogeneous; Singakwazi futhi ukwenza ngokwezifiso ishidi le-epitaxial ngokuya ngezidingo ezithile zamakhasimende, futhi abukho ubuncane be-oda lenani.

Izinto	Ukukhiqiza	Ucwaningo	Dummy
I-Crystal Parameters
I-Polytype	4H
Iphutha lokuma kobuso	<11-20 >4±0.15°
Amapharamitha kagesi
I-Dopant	n-uhlobo lweNitrojeni
Ukungazweli	0.015-0.025ohm · cm
Mechanical Parameters
Ububanzi	99.5 - 100mm
Ubukhulu	350±25 μm
Umumo oyisicaba oyinhloko	[1-100]±5°
Ubude obuyisicaba obuyisisekelo	32.5±1.5mm
Indawo eyisicaba yesibili	90° CW kusukela efulethini lokuqala ±5°. i-silicon ibheke phezulu
Ubude befulethi besibili	18±1.5mm
I-TTV	≤5 μm	≤10 μm	≤20 μm
I-LTV	≤2 μm(5mm*5mm)	≤5 μm(5mm*5mm)	NA
Khothama	-15μm ~ 15μm	-35μm ~ 35μm	-45μm ~ 45μm
I-Wap	≤20 μm	≤45 μm	≤50 μm
Front(Si-face) roughness(AFM)	I-Ra≤0.2nm (5μm*5μm)
Isakhiwo
Ukuminyana kwe-Micropipe	≤1 i-e/cm2	≤5 i-e/cm2	≤10 e/cm2
Ukungcola kwensimbi	≤5E10 ama-athomu/cm2		NA
I-BPD	≤1500 i-e/cm2	≤3000 i-e/cm2	NA
I-TSD	≤500 i-e/cm2	≤1000 i-e/cm2	NA
Ikhwalithi Yangaphambili
Ngaphambili	Si
Ukuqedwa kobuso	I-Si-face CMP
Izinhlayiya	≤60ea/wafer (usayizi≥0.3μm)	NA
Ukuklwebheka	≤2ea/mm. Ubude obuqongelelwe ≤Ububanzi	Ubude obuqongelelwe≤2*Ububanzi	NA
Ikhasi eliwolintshi/imigodi/amabala/ama-striations/ imifantu/ukungcola	Lutho		NA
Ama-Edge chips/indents/fracture/hex plate	Lutho		NA
Izindawo ze-Polytype	Lutho	Indawo eqoqiwe≤20%	Indawo eqoqiwe≤30%
Ukumaka kwe-laser yangaphambili	Lutho
Ikhwalithi Emuva
Emuva ekupheleni	C-face CMP
Ukuklwebheka	≤5ea/mm, Ubude obuqongelelayo≤2*Ububanzi	NA
Ukukhubazeka kwasemuva (ama-edge chips/indents)	Lutho
Ukuhwalala emuva	I-Ra≤0.2nm (5μm*5μm)
Ukumaka kwe-laser emuva	1 mm (kusuka emaphethelweni aphezulu)
Umphetho
Umphetho	I-Chamfer
Ukupakisha
Ukupakisha	Isikhwama sangaphakathi sigcwaliswa nge-nitrogen futhi isikhwama sangaphandle siyacocwa. Ikhasethi le-wafer eningi, i-epi-ready.
*Amanothi: "NA" kusho ukuthi asikho isicelo Izinto ezingashiwongo zingabhekisa ku-SEMI-STD.