Incazelo
Inkampani yethu ihlinzekaUkufakwa kwe-SiCizinqubo ze-CVD phezu kwegraphite, izitsha zobumba nezinye izinto, ukuze amagesi akhethekile aqukethe ikhabhoni ne-silicon asabele ekushiseni okuphezulu ukuze athole ukuhlanzeka okuphezulu kwama-molecule e-SiC, ama-molecule afakwe ebusweni bezinto ezimboziwe, akhaIsendlalelo sokuvikela se-SiC.
Izici Eziyinhloko
1. Ukumelana nokushisa okuphezulu kwe-oxidation:
ukumelana ne-oxidation kusekuhle kakhulu lapho izinga lokushisa liphezulu njenge-1600 ℃.
2. Ukuhlanzeka okuphezulu: okwenziwe yi-chemical vapor deposition ngaphansi kwesimo sokushisa okuphezulu kwe-chlorination.
3. Ukumelana nokuguguleka: ubulukhuni obuphezulu, indawo ehlangene, izinhlayiya ezinhle.
4. Ukumelana nokugqwala: i-asidi, i-alkali, usawoti kanye nama-organic reagents.
Ukucaciswa Okuyinhloko kwe-CVD-SIC Coating
| Izakhiwo ze-SiC-CVD | ||
| Isakhiwo Sekristalu | I-FCC β isigaba | |
| Ukuminyana | g/cm³ | 3.21 |
| Ukuqina | Vickers ubulukhuni | 2500 |
| Usayizi Wokusanhlamvu | μm | 2~10 |
| I-Chemical Purity | % | 99.99995 |
| Amandla Okushisa | J·kg-1 ·K-1 | 640 |
| I-Sublimation Temperature | ℃ | 2700 |
| Amandla E-Felexural | I-MPa (RT 4-point) | 415 |
| I-Modulus Encane | I-Gpa (4pt bend, 1300℃) | 430 |
| I-Thermal Expansion (CTE) | 10-6K-1 | 4.5 |
| I-Thermal conductivity | (W/mK) | 300 |
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