4″ 6″ High Purity Semi-Insulating SiC Ingot

Incazelo emfushane:

Ama-SiC Ingots we-Semicera's 4”6” High Purity Semi-Insulating SiC aklanywe ngokucophelela ukuze asetshenziswe izinhlelo zokusebenza ezithuthukisiwe ze-electronic kanye ne-optoelectronic. Ihambisana ne-thermal conductivity ephezulu kanye nokumelana nogesi, lawa ma-ingots ahlinzeka ngesisekelo esiqinile samadivayisi asebenza kahle kakhulu. I-Semicera iqinisekisa ikhwalithi engaguquki nokuthembeka kuwo wonke umkhiqizo.

Thumela i-imeyili kithi

Imininingwane Yomkhiqizo

Omaka bomkhiqizo

I-Semicera's 4”6” High Purity Semi-Insulating SiC Ingots yakhelwe ukuhlangabezana namazinga aqondile emboni ye-semiconductor. Lawa ma-ingots akhiqizwa ngokugxila ekuhlanzekeni nasekungaguquguquki, okuwenza abe yinketho ekahle yezinhlelo zokusebenza zamandla aphezulu kanye nemvamisa ephezulu lapho ukusebenza kubaluleke kakhulu.

Izakhiwo eziyingqayizivele zalezi zingothi ze-SiC, okuhlanganisa ukuqhutshwa kwe-thermal okuphezulu kanye nokumelana nogesi okuhle kakhulu, kuzenza zifaneleke ngokukhethekile ukusetshenziswa kugesi wamandla kanye namadivayisi we-microwave. Imvelo yabo ye-semi-insulating ivumela ukuchithwa okuphumelelayo kokushisa kanye nokuphazamiseka okuncane kagesi, okuholela ezingxenyeni ezisebenza kahle nezithembekile.

I-Semicera isebenzisa izinqubo zokukhiqiza ezisezingeni eliphezulu ukuze ikhiqize ama-ingots anekhwalithi eyingqayizivele yekristalu nokufana. Lokhu kunemba kuqinisekisa ukuthi ingothi ngayinye ingasetshenziswa ngokuthembekile ezinhlelweni zokusebenza ezizwelayo, njengezikhulisi zefrikhwensi ephezulu, ama-laser diode, namanye amadivayisi e-optoelectronic.

Kutholakala kubo bobabili osayizi abangu-4-intshi no-6-intshi, ama-ingots we-Semicera we-SiC ahlinzeka ngokuguquguquka okudingekayo ezikalini ezihlukahlukene zokukhiqiza kanye nezidingo zobuchwepheshe. Noma ngabe okokucwaninga nokuthuthukiswa noma ukukhiqizwa ngobuningi, lezi zingo ziletha ukusebenza nokuqina okudingwa amasistimu esimanje kagesi.

Ngokukhetha ama-SiC Ingots we-Semicera's High Purity Semi-Insulating SiC, utshala imali emkhiqizweni ohlanganisa isayensi yezinto ezithuthukisiwe nobuchule bokukhiqiza obungenakuqhathaniswa. I-Semicera inikezelwe ekusekeleni ukuqanjwa nokukhula kwemboni ye-semiconductor, ihlinzeka ngezinto ezisiza ukuthuthukiswa kwemishini kagesi esezingeni eliphezulu.

Izinto	Ukukhiqiza	Ucwaningo	Dummy
I-Crystal Parameters
I-Polytype	4H
Iphutha lokuma kobuso	<11-20 >4±0.15°
Amapharamitha kagesi
I-Dopant	n-uhlobo lweNitrojeni
Ukungazweli	0.015-0.025ohm · cm
Mechanical Parameters
Ububanzi	150.0±0.2mm
Ubukhulu	350±25 μm
Umumo oyisicaba oyinhloko	[1-100]±5°
Ubude obuyisicaba obuyisisekelo	47.5±1.5mm
Ifulethi lesibili	Lutho
I-TTV	≤5 μm	≤10 μm	≤15 μm
I-LTV	≤3 μm(5mm*5mm)	≤5 μm(5mm*5mm)	≤10 μm(5mm*5mm)
Khothama	-15μm ~ 15μm	-35μm ~ 35μm	-45μm ~ 45μm
I-Wap	≤35 μm	≤45 μm	≤55 μm
Front(Si-face) roughness(AFM)	I-Ra≤0.2nm (5μm*5μm)
Isakhiwo
Ukuminyana kwe-Micropipe	<1 eya/cm2	<10 kwe/cm2	<15 kwe/cm2
Ukungcola kwensimbi	≤5E10 ama-athomu/cm2		NA
I-BPD	≤1500 i-e/cm2	≤3000 i-e/cm2	NA
I-TSD	≤500 i-e/cm2	≤1000 i-e/cm2	NA
Ikhwalithi Yangaphambili
Ngaphambili	Si
Ukuqedwa kobuso	I-Si-face CMP
Izinhlayiya	≤60ea/wafer (usayizi≥0.3μm)	NA
Ukuklwebheka	≤5ea/mm. Ubude obuqongelelwe ≤Ububanzi	Ubude obuqongelelwe≤2*Ububanzi	NA
Ikhasi eliwolintshi/imigodi/amabala/ama-striations/ imifantu/ukungcola	Lutho		NA
Ama-Edge chips/indents/fracture/hex plate	Lutho
Izindawo ze-Polytype	Lutho	Indawo eqoqiwe≤20%	Indawo eqoqiwe≤30%
Ukumaka kwe-laser yangaphambili	Lutho
Ikhwalithi Emuva
Emuva ekupheleni	C-face CMP
Ukuklwebheka	≤5ea/mm, Ubude obuqongelelayo≤2*Ububanzi	NA
Ukukhubazeka kwasemuva (ama-edge chips/indents)	Lutho
Ukuhwalala emuva	I-Ra≤0.2nm (5μm*5μm)
Ukumaka kwe-laser emuva	1 mm (kusuka emaphethelweni aphezulu)
Umphetho
Umphetho	I-Chamfer
Ukupakisha
Ukupakisha	I-Epi-ilungile ngokufakwa kwe-vacuum Ukupakishwa kwekhasethi le-multi-wafer
*Amanothi: "NA" kusho ukuthi asikho isicelo Izinto ezingashiwongo zingabhekisa ku-SEMI-STD.