I-Semicera's 4”6” High Purity Semi-Insulating SiC Ingots yakhelwe ukuhlangabezana namazinga aqondile emboni ye-semiconductor. Lawa ma-ingots akhiqizwa ngokugxila ekuhlanzekeni nasekungaguquguquki, okuwenza abe yinketho ekahle yezinhlelo zokusebenza zamandla aphezulu kanye nemvamisa ephezulu lapho ukusebenza kubaluleke kakhulu.
Izakhiwo eziyingqayizivele zalezi zingothi ze-SiC, okuhlanganisa ukuqhutshwa kwe-thermal okuphezulu kanye nokumelana nogesi okuhle kakhulu, kuzenza zifaneleke ngokukhethekile ukusetshenziswa kugesi wamandla kanye namadivayisi we-microwave. Imvelo yabo ye-semi-insulating ivumela ukuchithwa okuphumelelayo kokushisa kanye nokuphazamiseka okuncane kagesi, okuholela ezingxenyeni ezisebenza kahle nezithembekile.
I-Semicera isebenzisa izinqubo zokukhiqiza ezisezingeni eliphezulu ukuze ikhiqize ama-ingots anekhwalithi eyingqayizivele yekristalu nokufana. Lokhu kunemba kuqinisekisa ukuthi ingothi ngayinye ingasetshenziswa ngokuthembekile ezinhlelweni zokusebenza ezizwelayo, njengezikhulisi zefrikhwensi ephezulu, ama-laser diode, namanye amadivayisi e-optoelectronic.
Kutholakala kubo bobabili osayizi abangu-4-intshi no-6-intshi, ama-ingots we-Semicera we-SiC ahlinzeka ngokuguquguquka okudingekayo ezikalini ezihlukahlukene zokukhiqiza kanye nezidingo zobuchwepheshe. Noma ngabe okokucwaninga nokuthuthukiswa noma ukukhiqizwa ngobuningi, lezi zingo ziletha ukusebenza nokuqina okudingwa amasistimu esimanje kagesi.
Ngokukhetha ama-SiC Ingots we-Semicera's High Purity Semi-Insulating SiC, utshala imali emkhiqizweni ohlanganisa isayensi yezinto ezithuthukisiwe nobuchule bokukhiqiza obungenakuqhathaniswa. I-Semicera inikezelwe ekusekeleni ukuqanjwa nokukhula kwemboni ye-semiconductor, ihlinzeka ngezinto ezisiza ukuthuthukiswa kwemishini kagesi esezingeni eliphezulu.
| Izinto | Ukukhiqiza | Ucwaningo | Dummy |
| I-Crystal Parameters | |||
| I-Polytype | 4H | ||
| Iphutha lokuma kobuso | <11-20 >4±0.15° | ||
| Amapharamitha kagesi | |||
| I-Dopant | n-uhlobo lweNitrojeni | ||
| Ukungazweli | 0.015-0.025ohm · cm | ||
| Mechanical Parameters | |||
| Ububanzi | 150.0±0.2mm | ||
| Ubukhulu | 350±25 μm | ||
| Umumo oyisicaba oyinhloko | [1-100]±5° | ||
| Ubude obuyisicaba obuyisisekelo | 47.5±1.5mm | ||
| Ifulethi lesibili | Lutho | ||
| I-TTV | ≤5 μm | ≤10 μm | ≤15 μm |
| I-LTV | ≤3 μm(5mm*5mm) | ≤5 μm(5mm*5mm) | ≤10 μm(5mm*5mm) |
| Khothama | -15μm ~ 15μm | -35μm ~ 35μm | -45μm ~ 45μm |
| I-Wap | ≤35 μm | ≤45 μm | ≤55 μm |
| Front(Si-face) roughness(AFM) | I-Ra≤0.2nm (5μm*5μm) | ||
| Isakhiwo | |||
| Ukuminyana kwe-Micropipe | <1 eya/cm2 | <10 kwe/cm2 | <15 kwe/cm2 |
| Ukungcola kwensimbi | ≤5E10 ama-athomu/cm2 | NA | |
| I-BPD | ≤1500 i-e/cm2 | ≤3000 i-e/cm2 | NA |
| I-TSD | ≤500 i-e/cm2 | ≤1000 i-e/cm2 | NA |
| Ikhwalithi Yangaphambili | |||
| Ngaphambili | Si | ||
| Ukuqedwa kobuso | I-Si-face CMP | ||
| Izinhlayiya | ≤60ea/wafer (usayizi≥0.3μm) | NA | |
| Ukuklwebheka | ≤5ea/mm. Ubude obuqongelelwe ≤Ububanzi | Ubude obuqongelelwe≤2*Ububanzi | NA |
| Ikhasi eliwolintshi/imigodi/amabala/imifantu/ukungcola | Lutho | NA | |
| Ama-Edge chips/indents/fracture/hex plate | Lutho | ||
| Izindawo ze-Polytype | Lutho | Indawo eqoqiwe≤20% | Indawo eqoqiwe≤30% |
| Ukumaka kwe-laser yangaphambili | Lutho | ||
| Ikhwalithi Emuva | |||
| Emuva ekupheleni | C-face CMP | ||
| Ukuklwebheka | ≤5ea/mm,Ubude obuqongelelayo≤2*Ububanzi | NA | |
| Ukukhubazeka kwasemuva (ama-edge chips/indents) | Lutho | ||
| Ukuhwalala emuva | I-Ra≤0.2nm (5μm*5μm) | ||
| Ukumaka kwe-laser emuva | 1 mm (kusuka emaphethelweni aphezulu) | ||
| Umphetho | |||
| Umphetho | I-Chamfer | ||
| Ukupakisha | |||
| Ukupakisha | I-Epi-ilungile ngokufakwa kwe-vacuum Ukupakishwa kwekhasethi le-multi-wafer | ||
| *Amanothi: "NA" kusho ukuthi asikho isicelo Izinto ezingashiwongo zingabhekisa ku-SEMI-STD. | |||
