1.MayelanaI-Silicon Carbide (SiC) Ama-Epitaxial Wafers
Amawafa e-Silicon Carbide (SiC) epitaxial akhiwa ngokufaka ungqimba olulodwa lwekristalu kusinkwa esilucwecwana kusetshenziswa i-silicon carbide single crystal wafer njenge-substrate, imvamisa nge-chemical vapor deposition (CVD). Phakathi kwazo, i-silicon carbide epitaxial ilungiswa ngokukhula kwe-silicon carbide epitaxial layer ku-conductive silicon carbide substrate, futhi yenziwa kabusha ibe ngamadivaysi asebenza kahle kakhulu.
2.I-Silicon Carbide Epitaxial WaferImininingwane
Singahlinzeka ngama-4, 6, 8 amayintshi angu-N-uhlobo lwe-4H-SiC ama-epitaxial wafers. I-epitaxial wafer inomkhawulokudonsa omkhulu, isivinini sokukhukhuleka se-electron ephezulu, igesi ye-electron enezinhlangothi ezimbili enesivinini esikhulu, namandla enkambu ehlukana kakhulu. Lezi zakhiwo zenza idivayisi imelane nezinga lokushisa eliphakeme, ukumelana nomthamo omkhulu kagesi, isivinini sokushintsha ngokushesha, ukumelana nokumelana okuphansi, usayizi omncane nesisindo esilula.
3. Izicelo ze-SiC Epitaxial
I-SiC epitaxial waferisetshenziswa kakhulu ku-Schottky diode (SBD), i-metal oxide semiconductor field effect transistor (MOSFET) junction field effect transistor (JFET), bipolar junction transistor (BJT), thyristor (SCR), insulated gate bipolar transistor (IGBT), esetshenziswayo. ezindaweni ezine-low-voltage, medium-voltage kanye ne-high-voltage. Okwamanje,I-SiC epitaxial wafersama-high-voltage application asesigabeni socwaningo nentuthuko emhlabeni jikelele.
