6 Intshi N-uhlobo lwe-SiC Substrate

I-Silicon carbide (SiC) i-crystal material eyodwa inobubanzi begebe lebhande elikhulu (~Si izikhathi ezi-3), ukuguquguquka okuphezulu kwe-thermal (~Si izikhathi ezingu-3.3 noma izikhathi ze-GaAs izikhathi ezingu-10), izinga lokufuduka kwe-electron ephezulu (~Si izikhathi ezingu-2.5), ukuphuka okuphezulu kukagesi inkambu (~Si 10 izikhathi noma GaAs izikhathi 5) kanye nezinye izici ezivelele.

Izinto ze-semiconductor yesizukulwane sesithathu ikakhulukazi zifaka i-SiC, i-GaN, idayimane, njll., ngoba ububanzi begebe lebhendi yayo (Isb) bukhulu noma bulingana nama-electron volts (eV) angu-2.3 (eV), owaziwa nangokuthi i-wide band gap semiconductor materials. Uma kuqhathaniswa nezinto zokwakha ze-semiconductor yesizukulwane sokuqala nesesibili, izinto zokwakha ze-semiconductor yesizukulwane sesithathu zinezinzuzo zokubamba okuphezulu okushisayo, insimu kagesi ewohlokayo, izinga eliphezulu lokufuduka kwama-electron namandla aphezulu okubopha, okungahlangabezana nezidingo ezintsha zobuchwepheshe besimanje be-elekthronikhi izinga lokushisa, amandla aphezulu, umfutho ophezulu, imvamisa ephezulu kanye nokumelana nemisebe nezinye izimo ezinzima. Inamathemba okusebenza abalulekile emikhakheni yezokuvikela kuzwelonke, ezondiza, i-aerospace, ukuhlola uwoyela, ukugcinwa kwamehlo, njll., futhi inganciphisa ukulahleka kwamandla ngaphezu kuka-50% ezimbonini zamasu eziningi ezifana nezokuxhumana nge-broadband, amandla elanga, ukukhiqiza izimoto, ukukhanya kwe-semiconductor, kanye negridi ehlakaniphile, futhi kunganciphisa umthamo wezinto zokusebenza ngamaphesenti angaphezu kwama-75, okubaluleke kakhulu ekuthuthukisweni kwesayensi yabantu nobuchwepheshe.

Amandla we-Semicera anganikeza amakhasimende izinga eliphezulu le-Conductive (Conductive), i-Semi-insulating (Semi-insulating), i-HPSI (i-High Purity semi-insulating) i-silicon carbide substrate; Ngaphezu kwalokho, singahlinzeka amakhasimende ngamashidi e-epitaxial e-silicon carbide e-homogeneous and heterogeneous; Singakwazi futhi ukwenza ngokwezifiso ishidi le-epitaxial ngokuya ngezidingo ezithile zamakhasimende, futhi abukho ubuncane be-oda lenani.