I-Silicon carbide (SiC) i-crystal material eyodwa inobubanzi begebe lebhande elikhulu (~Si izikhathi ezi-3), ukuguquguquka okuphezulu kwe-thermal (~Si izikhathi ezingu-3.3 noma izikhathi ze-GaAs izikhathi ezingu-10), izinga lokufuduka kwe-electron ephezulu (~Si izikhathi ezingu-2.5), ukuphuka okuphezulu kukagesi inkambu (~Si 10 izikhathi noma GaAs izikhathi 5) kanye nezinye izici ezivelele.
Izinto ze-semiconductor yesizukulwane sesithathu ikakhulukazi zifaka i-SiC, i-GaN, idayimane, njll., ngoba ububanzi begebe lebhendi yayo (Isb) bukhulu noma bulingana nama-electron volts (eV) angu-2.3 (eV), owaziwa nangokuthi i-wide band gap semiconductor materials. Uma kuqhathaniswa nezinto zokwakha ze-semiconductor yesizukulwane sokuqala nesesibili, izinto zokwakha ze-semiconductor yesizukulwane sesithathu zinezinzuzo zokubamba okuphezulu okushisayo, insimu kagesi ewohlokayo, izinga eliphezulu lokufuduka kwama-electron namandla aphezulu okubopha, okungahlangabezana nezidingo ezintsha zobuchwepheshe besimanje be-elekthronikhi izinga lokushisa, amandla aphezulu, umfutho ophezulu, imvamisa ephezulu kanye nokumelana nemisebe nezinye izimo ezinzima. Inamathemba okusebenza abalulekile emikhakheni yezokuvikela kuzwelonke, ezondiza, i-aerospace, ukuhlola uwoyela, ukugcinwa kwamehlo, njll., futhi inganciphisa ukulahleka kwamandla ngaphezu kuka-50% ezimbonini zamasu eziningi ezifana nezokuxhumana nge-broadband, amandla elanga, ukukhiqiza izimoto, ukukhanya kwe-semiconductor, kanye negridi ehlakaniphile, futhi kunganciphisa umthamo wezinto zokusebenza ngamaphesenti angaphezu kwama-75, okubaluleke kakhulu ekuthuthukisweni kwesayensi yabantu nobuchwepheshe.
Amandla we-Semicera anganikeza amakhasimende izinga eliphezulu le-Conductive (Conductive), i-Semi-insulating (Semi-insulating), i-HPSI (i-High Purity semi-insulating) i-silicon carbide substrate; Ngaphezu kwalokho, singahlinzeka amakhasimende ngamashidi e-epitaxial e-silicon carbide e-homogeneous and heterogeneous; Singakwazi futhi ukwenza ngokwezifiso ishidi le-epitaxial ngokuya ngezidingo ezithile zamakhasimende, futhi abukho ubuncane be-oda lenani.
| Izinto | Ukukhiqiza | Ucwaningo | Dummy |
| I-Crystal Parameters | |||
| I-Polytype | 4H | ||
| Iphutha lokuma kobuso | <11-20 >4±0.15° | ||
| Amapharamitha kagesi | |||
| I-Dopant | n-uhlobo lweNitrojeni | ||
| Ukungazweli | 0.015-0.025ohm · cm | ||
| Mechanical Parameters | |||
| Ububanzi | 150.0±0.2mm | ||
| Ubukhulu | 350±25 μm | ||
| Umumo oyisicaba oyinhloko | [1-100]±5° | ||
| Ubude obuyisicaba obuyisisekelo | 47.5±1.5mm | ||
| Ifulethi lesibili | Lutho | ||
| I-TTV | ≤5 μm | ≤10 μm | ≤15 μm |
| I-LTV | ≤3 μm(5mm*5mm) | ≤5 μm(5mm*5mm) | ≤10 μm(5mm*5mm) |
| Khothama | -15μm ~ 15μm | -35μm ~ 35μm | -45μm ~ 45μm |
| I-Wap | ≤35 μm | ≤45 μm | ≤55 μm |
| Front(Si-face) roughness(AFM) | I-Ra≤0.2nm (5μm*5μm) | ||
| Isakhiwo | |||
| Ukuminyana kwe-Micropipe | <1 eya/cm2 | <10 kwe/cm2 | <15 kwe/cm2 |
| Ukungcola kwensimbi | ≤5E10 ama-athomu/cm2 | NA | |
| I-BPD | ≤1500 i-e/cm2 | ≤3000 i-e/cm2 | NA |
| I-TSD | ≤500 i-e/cm2 | ≤1000 i-e/cm2 | NA |
| Ikhwalithi Yangaphambili | |||
| Ngaphambili | Si | ||
| Ukuqedwa kobuso | I-Si-face CMP | ||
| Izinhlayiya | ≤60ea/wafer (usayizi≥0.3μm) | NA | |
| Ukuklwebheka | ≤5ea/mm. Ubude obuqongelelwe ≤Ububanzi | Ubude obuqongelelwe≤2*Ububanzi | NA |
| Ikhasi eliwolintshi/imigodi/amabala/ama-striations/ imifantu/ukungcola | Lutho | NA | |
| Ama-Edge chips/indents/fracture/hex plate | Lutho | ||
| Izindawo ze-Polytype | Lutho | Indawo eqoqiwe≤20% | Indawo eqoqiwe≤30% |
| Ukumaka kwe-laser yangaphambili | Lutho | ||
| Ikhwalithi Emuva | |||
| Emuva ekupheleni | C-face CMP | ||
| Ukuklwebheka | ≤5ea/mm, Ubude obuqongelelayo≤2*Ububanzi | NA | |
| Ukukhubazeka kwasemuva (ama-edge chips/indents) | Lutho | ||
| Ukuhwalala emuva | I-Ra≤0.2nm (5μm*5μm) | ||
| Ukumaka kwe-laser emuva | 1 mm (kusuka emaphethelweni aphezulu) | ||
| Umphetho | |||
| Umphetho | I-Chamfer | ||
| Ukupakisha | |||
| Ukupakisha | I-Epi-ilungile ngokufakwa kwe-vacuum Ukupakishwa kwekhasethi le-multi-wafer | ||
| *Amanothi: "NA" kusho ukuthi asikho isicelo Izinto ezingashiwongo zingabhekisa ku-SEMI-STD. | |||
