6 lnch n-uhlobo lwe-sic substrate

Incazelo emfushane:

I-SiC substrate engu-6-intshi ye-n-type iyisisetshenziswa se-semiconductor esibonakala ngokusetshenziswa kosayizi we-wafer ongu-6-intshi, okwandisa inani lamadivayisi angakhiqizwa ngewafa eyodwa endaweni enkulu, ngaleyo ndlela kwehlise izindleko zezinga ledivayisi. . Ukuthuthukiswa nokusetshenziswa kwama-substrates angu-6-inch n-type SiC ahlomule ekuthuthukisweni kobuchwepheshe obufana nendlela yokukhula ye-RAF, enciphisa ukugudluka ngokusika amakristalu ahambisana nokugudluka kanye nezikhombisi-ndlela ezifanayo kanye namakristalu akhula kabusha, ngaleyo ndlela kuthuthukiswe ikhwalithi ye-substrate. Ukusetshenziswa kwale substrate kubaluleke kakhulu ekuthuthukiseni ukusebenza kahle kokukhiqiza kanye nokunciphisa izindleko zamadivayisi kagesi e-SiC.

Thumela i-imeyili kithi

Imininingwane Yomkhiqizo

Omaka bomkhiqizo

I-Silicon carbide (SiC) i-crystal material eyodwa inobubanzi begebe lebhande elikhulu (~Si izikhathi ezi-3), ukuguquguquka okuphezulu kwe-thermal (~Si izikhathi ezingu-3.3 noma izikhathi ze-GaAs izikhathi ezingu-10), izinga lokufuduka kwe-electron ephezulu (~Si izikhathi ezingu-2.5), ukuphuka okuphezulu kukagesi inkambu (~Si 10 izikhathi noma GaAs izikhathi 5) kanye nezinye izici ezivelele.

Izinto ze-semiconductor yesizukulwane sesithathu ikakhulukazi zifaka i-SiC, i-GaN, idayimane, njll., ngoba ububanzi begebe lebhendi yayo (Isb) bukhulu noma bulingana nama-electron volts (eV) angu-2.3 (eV), owaziwa nangokuthi i-wide band gap semiconductor materials. Uma kuqhathaniswa nezinto zokwakha ze-semiconductor yesizukulwane sokuqala nesesibili, izinto zokwakha ze-semiconductor yesizukulwane sesithathu zinezinzuzo zokubamba okuphezulu okushisayo, insimu kagesi ewohlokayo, izinga eliphezulu lokufuduka kwama-electron namandla aphezulu okubopha, okungahlangabezana nezidingo ezintsha zobuchwepheshe besimanje be-elekthronikhi izinga lokushisa, amandla aphezulu, umfutho ophezulu, imvamisa ephezulu kanye nokumelana nemisebe nezinye izimo ezinzima. Inamathemba okusebenza abalulekile emikhakheni yezokuvikela kuzwelonke, ezondiza, i-aerospace, ukuhlola uwoyela, ukugcinwa kwamehlo, njll., futhi inganciphisa ukulahleka kwamandla ngaphezu kuka-50% ezimbonini zamasu eziningi ezifana nezokuxhumana nge-broadband, amandla elanga, ukukhiqiza izimoto, ukukhanya kwe-semiconductor, kanye negridi ehlakaniphile, futhi kunganciphisa umthamo wezinto zokusebenza ngamaphesenti angaphezu kwama-75, okubaluleke kakhulu ekuthuthukisweni kwesayensi yabantu nobuchwepheshe.

Amandla we-Semicera anganikeza amakhasimende izinga eliphezulu le-Conductive (Conductive), i-Semi-insulating (Semi-insulating), i-HPSI (i-High Purity semi-insulating) i-silicon carbide substrate; Ngaphezu kwalokho, singahlinzeka amakhasimende ngamashidi e-epitaxial e-silicon carbide e-homogeneous and heterogeneous; Singakwazi futhi ukwenza ngokwezifiso ishidi le-epitaxial ngokuya ngezidingo ezithile zamakhasimende, futhi abukho ubuncane be-oda lenani.

IMIKHIQIZO EYISISEKELO

Usayizi	6-intshi
Ububanzi	150.0mm+0mm/-0.2mm
I-Surface Orientation	i-off-eksisi:4° ukuya ku-<1120>±0.5°
Ubude Befulethi obuyisisekelo	47.5mm1.5 mm
Isisekelo se-Flat Orientation	<1120>±1.0°
Ifulethi lesibili	Lutho
Ubukhulu	350.0um±25.0um
I-Polytype	4H
Uhlobo Lokuqhuba	n-uhlobo

IMINININGWANE YEKHRISTAL YEKHWALITHI

6-intshi
Into	Ibanga le-P-MOS	Ibanga le-P-SBD
Ukungazweli	0.015Ω·cm-0.025Ω·cm
I-Polytype	Akukho okuvunyelwe
I-Micropipe Density	≤0.2/cm2	≤0.5/cm2
I-EPD	≤4000/cm2	≤8000/cm2
I-TED	≤3000/cm2	≤6000/cm2
I-BPD	≤1000/cm2	≤2000/cm2
I-TSD	≤300/cm2	≤1000/cm2
I-SF(Ikalwe nge-UV-PL-355nm)	≤0.5% indawo	≤1% indawo
Amapuleti e-Hex ngokukhanya okuphezulu kakhulu	Akukho okuvunyelwe
I-Visual CarbonInclusions ngokukhanya okukhulu kakhulu	Indawo eqoqekayo≤0.05%