I-Semicerawethula i850V Amandla Aphezulu we-GaN-on-Si Epi Wafer, impumelelo ekusungulweni kwe-semiconductor. Le epi wafer ethuthukisiwe ihlanganisa ukusebenza kahle okuphezulu kwe-Gallium Nitride (GaN) nokusebenza kahle kwezindleko kwe-Silicon (Si), okwenza isixazululo esinamandla sezinhlelo zokusebenza zamandla kagesi aphezulu.
Izici Eziyinhloko:
•High Voltage Ukuphatha: Iklanyelwe ukusekela kufika ku-850V, le GaN-on-Si Epi Wafer ilungele ukufuna amandla kagesi, okuvumela ukusebenza kahle okuphezulu nokusebenza.
•Ukuminyana kwamandla okuthuthukisiwe: Ngokuhamba kwe-electron ephakeme kanye ne-thermal conductivity, ubuchwepheshe be-GaN buvumela imiklamo ehlangene kanye nokukhula kwamandla.
•Isixazululo Esisebenza Ngezindleko: Ngokusebenzisa i-silicon njenge-substrate, le wafer ye-epi inikeza enye indlela engabizi kakhulu kumawafa endabuko e-GaN, ngaphandle kokuyekethisa ikhwalithi noma ukusebenza.
•Ibanga Lohlelo Olubanzi: Ilungele ukusetshenziswa kwiziguquli zamandla, izikhulisamandla ze-RF, nezinye izinto zikagesi ezinamandla amakhulu, okuqinisekisa ukwethembeka nokuqina.
Hlola ikusasa lobuchwepheshe be-high-voltage nge-Semicera's850V Amandla Aphezulu we-GaN-on-Si Epi Wafer. Idizayinelwe izinhlelo zokusebenza ezisezingeni eliphezulu, lo mkhiqizo uqinisekisa ukuthi izinto zakho ze-elekthronikhi zisebenza kahle kakhulu nokwethembeka. Khetha i-Semicera ngezidingo zakho ze-semiconductor yesizukulwane esilandelayo.
| Izinto | Ukukhiqiza | Ucwaningo | Dummy |
| I-Crystal Parameters | |||
| I-Polytype | 4H | ||
| Iphutha lokuma kobuso | <11-20 >4±0.15° | ||
| Amapharamitha kagesi | |||
| I-Dopant | n-uhlobo lweNitrojeni | ||
| Ukungazweli | 0.015-0.025ohm · cm | ||
| Mechanical Parameters | |||
| Ububanzi | 150.0±0.2mm | ||
| Ubukhulu | 350±25 μm | ||
| Umumo oyisicaba oyinhloko | [1-100]±5° | ||
| Ubude obuyisicaba obuyisisekelo | 47.5±1.5mm | ||
| Ifulethi lesibili | Lutho | ||
| I-TTV | ≤5 μm | ≤10 μm | ≤15 μm |
| I-LTV | ≤3 μm(5mm*5mm) | ≤5 μm(5mm*5mm) | ≤10 μm(5mm*5mm) |
| Khothama | -15μm ~ 15μm | -35μm ~ 35μm | -45μm ~ 45μm |
| I-Wap | ≤35 μm | ≤45 μm | ≤55 μm |
| Front(Si-face) roughness(AFM) | I-Ra≤0.2nm (5μm*5μm) | ||
| Isakhiwo | |||
| Ukuminyana kwe-Micropipe | <1 eya/cm2 | <10 kwe/cm2 | <15 kwe/cm2 |
| Ukungcola kwensimbi | ≤5E10 ama-athomu/cm2 | NA | |
| I-BPD | ≤1500 i-e/cm2 | ≤3000 i-e/cm2 | NA |
| I-TSD | ≤500 i-e/cm2 | ≤1000 i-e/cm2 | NA |
| Ikhwalithi Yangaphambili | |||
| Ngaphambili | Si | ||
| Ukuqedwa kobuso | I-Si-face CMP | ||
| Izinhlayiya | ≤60ea/wafer (usayizi≥0.3μm) | NA | |
| Ukuklwebheka | ≤5ea/mm. Ubude obuqongelelwe ≤Ububanzi | Ubude obuqongelelwe≤2*Ububanzi | NA |
| Ikhasi eliwolintshi/imigodi/amabala/imifantu/ukungcola | Lutho | NA | |
| Ama-Edge chips/indents/fracture/hex plate | Lutho | ||
| Izindawo ze-Polytype | Lutho | Indawo eqoqiwe≤20% | Indawo eqoqiwe≤30% |
| Ukumaka kwe-laser yangaphambili | Lutho | ||
| Ikhwalithi Emuva | |||
| Emuva ekupheleni | C-face CMP | ||
| Ukuklwebheka | ≤5ea/mm,Ubude obuqongelelayo≤2*Ububanzi | NA | |
| Ukukhubazeka kwasemuva (ama-edge chips/indents) | Lutho | ||
| Ukuhwalala emuva | I-Ra≤0.2nm (5μm*5μm) | ||
| Ukumaka kwe-laser emuva | 1 mm (kusuka emaphethelweni aphezulu) | ||
| Umphetho | |||
| Umphetho | I-Chamfer | ||
| Ukupakisha | |||
| Ukupakisha | I-Epi-ilungile ngokufakwa kwe-vacuum Ukupakishwa kwekhasethi le-multi-wafer | ||
| *Amanothi: "NA" kusho ukuthi asikho isicelo Izinto ezingashiwongo zingabhekisa ku-SEMI-STD. | |||
