8 intshi n-uhlobo lwe-Conductive SiC Substrate

Incazelo emfushane:

I-8-inch n-type SiC substrate iyi-n-type silicon carbide (SiC) ethuthukisiwe ye-crystal substrate eyodwa enobubanzi obusuka ku-195 kuya ku-205 mm nogqinsi olusuka ku-300 kuya ku-650 microns. Le substrate inokugxila okuphezulu kwe-doping kanye nephrofayili yokuhlushwa eyenziwe ngokucophelela, ehlinzeka ukusebenza okuhle kakhulu kwezinhlelo zokusebenza ezahlukahlukene ze-semiconductor.

 


Imininingwane Yomkhiqizo

Omaka bomkhiqizo

I-8 lnch n-type Conductive SiC Substrate ihlinzeka ngokusebenza okungenakuqhathaniswa kwemishini ye-elekthronikhi yamandla, ihlinzeka nge-thermal conductivity enhle kakhulu, i-voltage ephukile ephezulu kanye nekhwalithi enhle kakhulu yezinhlelo zokusebenza ezithuthukisiwe ze-semiconductor. I-Semicera ihlinzeka ngezixazululo ezihamba phambili embonini nge-8 lnch n-type Conductive SiC Substrate yayo eyenziwe ngobunjiniyela.

I-Semicera's 8 lnch n-type Conductive SiC Substrate iwumsebenzi ophambili oklanyelwe ukuhlangabezana nezidingo ezikhulayo zama-electronics kanye nezinhlelo zokusebenza ze-semiconductor ezisebenza kahle kakhulu. I-substrate ihlanganisa izinzuzo ze-silicon carbide kanye ne-n-type conductivity ukuze ilethe ukusebenza okungenakuqhathaniswa kumadivayisi adinga ukuminyana kwamandla aphezulu, ukusebenza kahle kwe-thermal, nokuthembeka.

I-Semicera's 8 lnch n-type Conductive SiC Substrate yenziwe ngokucophelela ukuze kuqinisekiswe ikhwalithi ephezulu nokuvumelana. Ifaka i-thermal conductivity enhle kakhulu yokulahla ukushisa okusebenzayo, okuyenza ilungele izinhlelo zokusebenza zamandla aphezulu njengama-inverter amandla, ama-diode, nama-transistors. Ukwengeza, amandla kagesi aphezulu okuphuka kwale substrate aqinisekisa ukuthi ingakwazi ukumelana nezimo ezinzima, ihlinzeka ngenkundla eqinile yama-electronics asebenza kahle.

I-Semicera ibona indima ebalulekile edlalwa i-8 lnch n-type Conductive SiC Substrate ekuthuthukisweni kobuchwepheshe be-semiconductor. Ama-substrates ethu akhiqizwa kusetshenziswa izinqubo zesimanje ukuze kuqinisekiswe ukuminyana okuncane, okubalulekile ekuthuthukisweni kwemishini esebenza kahle. Lokhu kunaka kwemininingwane kunika amandla imikhiqizo esekela ukukhiqizwa kwezinto zikagesi zesizukulwane esilandelayo ngokusebenza okuphezulu nokuqina.

I-8 lnch n-type Conductive SiC Substrate yethu nayo yakhelwe ukuhlangabezana nezidingo zohlu olubanzi lwezinhlelo zokusebenza kusukela kwezezimoto kuye kumandla avuselelekayo. I-n-type conductivity inikeza izici zikagesi ezidingekayo ukuze kuthuthukiswe amadivayisi asebenza kahle kagesi, okwenza le substrate ibe ingxenye ebalulekile ekushintsheni kubuchwepheshe obuwonga kakhudlwana.

Kwa-Semicera, sizibophezele ekuhlinzekeni ngama-substrates aqhuba ukusungulwa kokukhiqizwa kwe-semiconductor. I-8 lnch n-type Conductive SiC Substrate iwubufakazi bokuzinikela kwethu kukhwalithi nokwenza kahle, siqinisekisa ukuthi amakhasimende ethu athola okokusebenza okungcono kakhulu kwezicelo zawo.

Imingcele eyisisekelo

Usayizi 8-intshi
Ububanzi 200.0mm+0mm/-0.2mm
I-Surface Orientation i-off-eksisi:4° ukuya ku-<1120>士0.5°
I-Notch Orientation <1100>士1°
I-Notch Angle 90°+5°/-1°
Ukujula Kwenotshi 1mm+0.25mm/-0mm
Ifulethi lesibili /
Ubukhulu 500.0士25.0um/350.0±25.0um
I-Polytype 4H
Uhlobo Lokuqhuba n-uhlobo
8lnch n-uhlobo lwe-sic Substrate-2
Ama-wafers e-SiC

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