I-8 lnch n-type Conductive SiC Substrate ihlinzeka ngokusebenza okungenakuqhathaniswa kwemishini ye-elekthronikhi yamandla, ihlinzeka nge-thermal conductivity enhle kakhulu, i-voltage ephukile ephezulu kanye nekhwalithi enhle kakhulu yezinhlelo zokusebenza ezithuthukisiwe ze-semiconductor. I-Semicera ihlinzeka ngezixazululo ezihamba phambili embonini nge-8 lnch n-type Conductive SiC Substrate yayo eyenziwe ngobunjiniyela.
I-Semicera's 8 lnch n-type Conductive SiC Substrate iwumsebenzi ophambili oklanyelwe ukuhlangabezana nezidingo ezikhulayo zama-electronics kanye nezinhlelo zokusebenza ze-semiconductor ezisebenza kahle kakhulu. I-substrate ihlanganisa izinzuzo ze-silicon carbide kanye ne-n-type conductivity ukuze ilethe ukusebenza okungenakuqhathaniswa kumadivayisi adinga ukuminyana kwamandla aphezulu, ukusebenza kahle kwe-thermal, nokuthembeka.
I-Semicera's 8 lnch n-type Conductive SiC Substrate yenziwe ngokucophelela ukuze kuqinisekiswe ikhwalithi ephezulu nokuvumelana. Ifaka i-thermal conductivity enhle kakhulu yokulahla ukushisa okusebenzayo, okuyenza ilungele izinhlelo zokusebenza zamandla aphezulu njengama-inverter amandla, ama-diode, nama-transistors. Ukwengeza, amandla kagesi aphezulu okuphuka kwale substrate aqinisekisa ukuthi ingakwazi ukumelana nezimo ezinzima, ihlinzeka ngenkundla eqinile yama-electronics asebenza kahle.
I-Semicera ibona indima ebalulekile edlalwa i-8 lnch n-type Conductive SiC Substrate ekuthuthukisweni kobuchwepheshe be-semiconductor. Ama-substrates ethu akhiqizwa kusetshenziswa izinqubo zesimanje ukuze kuqinisekiswe ukuminyana okuncane, okubalulekile ekuthuthukisweni kwemishini esebenza kahle. Lokhu kunaka kwemininingwane kunika amandla imikhiqizo esekela ukukhiqizwa kwezinto zikagesi zesizukulwane esilandelayo ngokusebenza okuphezulu nokuqina.
I-8 lnch n-type Conductive SiC Substrate yethu nayo yakhelwe ukuhlangabezana nezidingo zohlu olubanzi lwezinhlelo zokusebenza kusukela kwezezimoto kuye kumandla avuselelekayo. I-n-type conductivity inikeza izici zikagesi ezidingekayo ukuze kuthuthukiswe amadivayisi asebenza kahle kagesi, okwenza le substrate ibe ingxenye ebalulekile ekushintsheni kubuchwepheshe obuwonga kakhudlwana.
Kwa-Semicera, sizibophezele ekuhlinzekeni ngama-substrates aqhuba ukusungulwa kokukhiqizwa kwe-semiconductor. I-8 lnch n-type Conductive SiC Substrate iwubufakazi bokuzinikela kwethu kukhwalithi nokwenza kahle, siqinisekisa ukuthi amakhasimende ethu athola okokusebenza okungcono kakhulu kwezicelo zawo.
Imingcele eyisisekelo
Usayizi | 8-intshi |
Ububanzi | 200.0mm+0mm/-0.2mm |
I-Surface Orientation | i-off-eksisi:4° ukuya ku-<1120>士0.5° |
I-Notch Orientation | <1100>士1° |
I-Notch Angle | 90°+5°/-1° |
Ukujula Kwenotshi | 1mm+0.25mm/-0mm |
Ifulethi lesibili | / |
Ubukhulu | 500.0士25.0um/350.0±25.0um |
I-Polytype | 4H |
Uhlobo Lokuqhuba | n-uhlobo |