I-Silicon carbide (SiC) epitaxy
Ithreyi ye-epitaxial, ephethe i-substrate ye-SiC yokukhulisa ucezu lwe-SiC epitaxial, ibekwe ekamelweni lokusabela futhi ithinte ngokuqondile i-wafer.
Ingxenye engenhla yengxenye yenyanga iyisithwali sezinye izesekeli zegumbi lokusabela lemishini ye-Sic epitaxy, kuyilapho ingxenye ephansi yenyanga ixhunywe kushubhu ye-quartz, yethula igesi ukushayela isisekelo se-susceptor ukuze sijikeleze. ziyalawuleka izinga lokushisa futhi zifakwe ekamelweni lokusabela ngaphandle kokuxhumana okuqondile ne-wafer.
I-epitaxy
Ithreyi, ephethe i-substrate ye-Si yokukhulisa ucezu lwe-Si epitaxial, ibekwe ekamelweni lokusabela futhi ithintane ngokuqondile ne-wafer.
Indandatho yokushisisa itholakala eringini yangaphandle yethreyi ye-Si epitaxial substrate futhi isetshenziselwa ukulinganisa nokushisa. Ibekwe ekamelweni lokusabela futhi ayithinteli ngokuqondile i-wafer.
I-epitaxial susceptor, ephethe i-Si substrate yokukhulisa ucezu lwe-Si epitaxial, olubekwe ekamelweni lokusabela futhi luthintane ngokuqondile ne-wafer.
I-Epitaxial barrel iyizici ezibalulekile ezisetshenziswa ezinqubweni ezihlukahlukene zokukhiqiza ze-semiconductor, ngokuvamile ezisetshenziswa emishinini ye-MOCVD, enokuqina okuhle kakhulu kokushisa, ukumelana namakhemikhali nokumelana nokugqoka, okulungele kakhulu ukusetshenziswa ezinkambisweni zokushisa okuphezulu. Ixhumana namawafa.
| Izakhiwo ezibonakalayo ze-Recrystallized Silicon Carbide | |
| Impahla | Inani Elijwayelekile |
| Izinga lokushisa lokusebenza (°C) | 1600°C (nomoya-mpilo), 1700°C (ukunciphisa imvelo) |
| Okuqukethwe kwe-SiC | > 99.96% |
| Mahhala Si okuqukethwe | <0.1% |
| Ukuminyana ngobuningi | 2.60-2.70 g/cm3 |
| I-porosity ebonakalayo | < 16% |
| Amandla okucindezela | > 600 MPa |
| Amandla okugoba abandayo | 80-90 MPa (20°C) |
| Amandla okugoba ashisayo | 90-100 MPa (1400°C) |
| Ukunwetshwa kwe-Thermal @1500°C | 4.70 10-6/°C |
| I-Thermal conductivity @1200°C | 23 W/m•K |
| I-Elastic module | 240 GPA |
| Ukumelana nokushaqeka okushisayo | Kuhle ngokwedlulele |
| Izakhiwo ezibonakalayo ze-Sintered Silicon Carbide | |
| Impahla | Inani Elijwayelekile |
| Ukwakheka Kwamakhemikhali | SiC>95%, Si<5% |
| Ukuminyana kwenqwaba | >3.07 g/cm³ |
| I-porosity ebonakalayo | <0.1% |
| I-modulus yokuqhekeka ku-20 ℃ | 270 MPa |
| I-modulus yokuqhekeka ku-1200 ℃ | 290 MPa |
| Ukuqina ku-20 ℃ | 2400 Kg/mm² |
| Ukuqina kokuphuka ku-20% | 3.3 MPa · m1/2 |
| I-Thermal Conductivity ku-1200 ℃ | 45 w/m .K |
| Ukunwetshwa kwe-thermal ku-20-1200 ℃ | 4.5 1 × 10 -6/℃ |
| Izinga lokushisa eliphezulu | 1400 ℃ |
| Ukumelana nokushaqeka okushisayo ku-1200 ℃ | Kuhle |
| Izakhiwo ezibonakalayo eziyisisekelo zamafilimu e-CVD SiC | |
| Impahla | Inani Elijwayelekile |
| Isakhiwo Sekristalu | I-FCC β isigaba se-polycrystalline, ikakhulukazi (111) eqondiswe |
| Ukuminyana | 3.21 g/cm³ |
| Ukuqina 2500 | (500g umthwalo) |
| Usayizi Wokusanhlamvu | 2 ~ 10μm |
| I-Chemical Purity | 99.99995% |
| Amandla Okushisa | 640 J·kg-1·K-1 |
| I-Sublimation Temperature | 2700 ℃ |
| Amandla e-Flexural | 415 MPa RT 4-iphoyinti |
| I-Modulus Encane | 430 Gpa 4pt ukugoba, 1300℃ |
| I-Thermal Conductivity | 300Wm-1·K-1 |
| Ukunwetshwa kwe-Thermal(CTE) | 4.5×10-6 K -1 |
Izici eziyinhloko
Ingaphezulu liminyene futhi alinawo ama-pores.
Ukuhlanzeka okuphezulu, okuqukethwe kokungcola okuphelele <20ppm, umoya omuhle.
Ukumelana nezinga lokushisa eliphakeme, amandla akhuphuka ngokunyuka kwezinga lokushisa lokusetshenziswa, afinyelela inani eliphakeme kakhulu ku-2750 ℃, i-sublimation ku-3600 ℃.
I-modulus enwebekayo ephansi, i-thermal conductivity ephezulu, i-coefficient ephansi yokwanda kwe-thermal, kanye nokumelana nokushaqeka okuhle kakhulu kokushisa.
Ukuzinza okuhle kwamakhemikhali, amelana ne-asidi, i-alkali, usawoti, nama-organic reagents, futhi akunawo umthelela ezinsimbi ezincibilikisiwe, i-slag, neminye imithombo yezindaba ebolayo. Ayikhiqizi kakhulu emkhathini ngaphansi kuka-400 C, futhi izinga le-oxidation likhuphuka kakhulu ku-800 ℃.
Ngaphandle kokukhipha noma iyiphi igesi emazingeni okushisa aphezulu, ingakwazi ukugcina i-vacuum engu-10-7mmHg cishe ku-1800°C.
Isicelo somkhiqizo
I-crucible encibilikayo yokuhwamuka embonini ye-semiconductor.
Amandla aphezulu wesango leshubhu le-electronic.
Ibhulashi elithinta isilawuli sikagesi.
I-graphite monochromator ye-X-ray ne-neutron.
Izinhlobo ezihlukahlukene zama-graphite substrates kanye ne-atomic absorption tube coating.
I-pyrolytic carbon coating effect ngaphansi kwesibonakhulu esingu-500X, esinobuso obungaguquki futhi obuvalekile.
Ukufakwa kwe-TaC kuyisizukulwane esisha esimelana nezinga lokushisa eliphezulu, esinokuzinza okungcono kakhulu kwezinga lokushisa kune-SiC. Njengonamathela okumelana nokugqwala, okokulwa ne-oxidation kanye nenamathela engagugi, kungasetshenziswa endaweni engaphezulu kuka-2000C, esetshenziswa kabanzi ku-aerospace ultra-high heat hot end parts, isizukulwane sesithathu semiconductor single crystal growth fields.
| Izakhiwo ezibonakalayo ze-TaC coating | |
| Ukuminyana | 14.3 (g/cm3) |
| Ukukhipha umoya okukhethekile | 0.3 |
| I-coefficient yokwandisa ukushisa | 6.3 10/K |
| Ukuqina (HK) | 2000 HK |
| Ukumelana | 1x10-5 Ohm*cm |
| Ukuzinza okushisayo | <2500℃ |
| Usayizi we-graphite uyashintsha | -10 ~ 20um |
| Ukuqina kwe-coating | ≥220um inani elijwayelekile (35um±10um) |
Izingxenye eziqinile ze-CVD SILICON CARBIDE zibonwa njengokukhetha okuyinhloko kwamasongo e-RTP/EPI nezisekelo kanye nezingxenye ze-plasma etch cavity ezisebenza kumazinga okushisa okusebenza adingekayo esistimu (> 1500°C), izimfuneko zobumsulwa ziphezulu kakhulu (> 99.9995%) futhi ukusebenza kuhle ikakhulukazi lapho amakhemikhali e-tol ukumelana ephezulu kakhulu. Lezi zinto aziqukethe izigaba zesibili onqenqemeni lokusanhlamvu, ngakho-ke izingxenye ze-theil zikhiqiza izinhlayiya ezimbalwa kunezinye izinto. Ngaphezu kwalokho, lezi zingxenye zingahlanzwa usebenzisa i-HF/HCI eshisayo ngokuwohloka okuncane, okuholela ezinhlayiyeni ezimbalwa nempilo yesevisi ende.
