GxilaI-CVD SiC Ringiyindandatho ye-silicon carbide (SiC) elungiselelwe ubuchwepheshe be-Focus Chemical Vapor Deposition (Focus CVD).
GxilaI-CVD SiC Ringinezici eziningi zokusebenza ezinhle kakhulu. Okokuqala, inobunzima obuphezulu, indawo ephezulu yokuncibilika kanye nokumelana nokushisa okuphezulu kakhulu, futhi ingagcina ukuzinza nobuqotho besakhiwo ngaphansi kwezimo zokushisa ezimbi kakhulu. Okwesibili, FocusI-CVD SiC Ringinokuqina okuhle kakhulu kwamakhemikhali kanye nokumelana nokugqwala, futhi inokumelana okuphezulu nemidiya egqwalayo njengama-acids nama-alkali. Ngaphezu kwalokho, ibuye ibe ne-conductivity enhle kakhulu yokushisa kanye namandla omshini, ofanele izidingo zohlelo lokushisa eliphezulu, ukucindezela okuphezulu kanye nezindawo ezibolayo.
GxilaI-CVD SiC Ringisetshenziswa kabanzi emikhakheni eminingi. Ivame ukusetshenziselwa ukuhlukaniswa okushisayo kanye nezinto zokuvikela zemishini yokushisa ephezulu, njengeziko lokushisa eliphezulu, amadivaysi e-vacuum nama-reactors amakhemikhali. Ngaphezu kwalokho, FocusI-CVD SiC Ringingasetshenziswa futhi kuma-optoelectronics, ukukhiqizwa kwe-semiconductor, ukunemba kwemishini kanye ne-aerospace, ukuhlinzeka ngokubekezelela okuphezulu kwemvelo nokuthembeka.
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I-Epitaxy Growth Susceptor
Amawafa e-silicon/silicon carbide adinga ukudlula ezinqubweni eziningi okufanele asetshenziswe kumishini kagesi. Inqubo ebalulekile i-silicon/sic epitaxy, lapho amawafa e-silicon/sic athwalwa khona ngesisekelo segraphite. Izinzuzo ezikhethekile ze-Semicera's silicone carbide-coated graphite base zifaka ukuhlanzeka okuphezulu kakhulu, ukunamathela okufanayo, nempilo yesevisi ende kakhulu. Futhi banokuphikiswa okuphezulu kwamakhemikhali kanye nokuzinza kokushisa.
Ukukhiqizwa kwe-chip ye-LED
Ngesikhathi sokumbozwa okubanzi kwe-reactor ye-MOCVD, isisekelo seplanethi noma umthwali uhambisa i-wafer ye-substrate. Ukusebenza kwezinto eziyisisekelo kunethonya elikhulu kwikhwalithi yokugqoka, okubuye kuthinte izinga le-scrap ye-chip. Isisekelo esihlanganiswe ne-silicon carbide se-Semicera sinyusa ukusebenza kahle kokukhiqizwa kwamawafa e-LED ekhwalithi ephezulu futhi sinciphisa ukuchezuka kwamaza. Siphinde sinikeze izingxenye ezengeziwe ze-graphite zazo zonke iziphehlisi ze-MOCVD ezisetshenziswayo njengamanje. Singakwazi ukugqoka cishe noma iyiphi ingxenye nge-silicon carbide coating, noma ngabe ububanzi bengxenye bufika ku-1.5M, sisengakwazi ukugqoka nge-silicon carbide.
Inkambu yeSemiconductor, Inqubo Yokusabalalisa Kwe-oxidation, njll.
Enqubweni ye-semiconductor, inqubo yokunwetshwa kwe-oxidation idinga ukuhlanzeka okuphezulu komkhiqizo, futhi kwa-Semicera sinikeza inkambiso nezinsizakalo zokumboza ze-CVD zeningi lezingxenye ze-silicon carbide.
Isithombe esilandelayo sibonisa udaka lwe-silicon carbide olucutshungulwe kahle lwe-Semicea kanye neshubhu le-silicon carbide furnace elihlanzwa ku-1000-izingaengenalo uthuliigumbi. Abasebenzi bethu basebenza ngaphambi kokugqoka. Ukuhlanzeka kwe-silicon carbide yethu kungafinyelela ku-99.99%, futhi ubumsulwa be-sic coating bukhulu kuno-99.99995%.