I-Semicerangokuziqhenya inikezaGa2O3I-Epitaxy, isixazululo sesimanje esiklanyelwe ukusunduza imingcele yamandla kagesi nama-optoelectronics. Lobu buchwepheshe be-epitaxial obuthuthukisiwe busebenzisa izakhiwo eziyingqayizivele ze-Gallium Oxide (Ga2O3) ukuletha ukusebenza okuphezulu ezicelweni ezifunayo.
Izici Eziyinhloko:
• I-Exceptional Wide Bandgap: Ga2O3I-Epitaxyifaka i-ultra-wide bandgap, evumela ama-voltage aphezulu okuphuka nokusebenza kahle ezindaweni ezinamandla amakhulu.
•High Thermal Conductivity: Isendlalelo se-epitaxial sihlinzeka nge-conductivity enhle kakhulu ye-thermal, iqinisekisa ukusebenza okuzinzile ngisho nangaphansi kwezimo zokushisa eziphezulu, okwenza kube kuhle kumadivayisi we-high-frequency.
•Ikhwalithi Yezinto Eziphakeme: Finyelela ikhwalithi ephezulu yekristalu enokukhubazeka okuncane, ukuqinisekisa ukusebenza kahle kwedivayisi nokuhlala isikhathi eside, ikakhulukazi ezinhlelweni ezibucayi ezifana nama-transistors amandla kanye nezitholi ze-UV.
•Ukuhlukahluka Kwezinhlelo Zokusebenza: Ifaneleka kahle kuma-electronics wamandla, izinhlelo zokusebenza ze-RF, nama-optoelectronics, ihlinzeka ngesisekelo esithembekile samadivayisi we-semiconductor yesizukulwane esilandelayo.
Thola amandla weGa2O3I-Epitaxyngezixazululo ezintsha ze-Semicera. Imikhiqizo yethu ye-epitaxial yakhelwe ukuhlangabezana namazinga aphezulu kakhulu ekhwalithi nokusebenza, okuvumela amadivayisi akho ukuthi asebenze ngempumelelo enkulu nokwethembeka. Khetha i-Semicera yobuchwepheshe be-semiconductor obusezingeni eliphezulu.
| Izinto | Ukukhiqiza | Ucwaningo | Dummy |
| I-Crystal Parameters | |||
| I-Polytype | 4H | ||
| Iphutha lokuma kobuso | <11-20 >4±0.15° | ||
| Amapharamitha kagesi | |||
| I-Dopant | n-uhlobo lweNitrojeni | ||
| Ukungazweli | 0.015-0.025ohm · cm | ||
| Mechanical Parameters | |||
| Ububanzi | 150.0±0.2mm | ||
| Ubukhulu | 350±25 μm | ||
| Umumo oyisicaba oyinhloko | [1-100]±5° | ||
| Ubude obuyisicaba obuyisisekelo | 47.5±1.5mm | ||
| Ifulethi lesibili | Lutho | ||
| I-TTV | ≤5 μm | ≤10 μm | ≤15 μm |
| I-LTV | ≤3 μm(5mm*5mm) | ≤5 μm(5mm*5mm) | ≤10 μm(5mm*5mm) |
| Khothama | -15μm ~ 15μm | -35μm ~ 35μm | -45μm ~ 45μm |
| I-Wap | ≤35 μm | ≤45 μm | ≤55 μm |
| Front(Si-face) roughness(AFM) | I-Ra≤0.2nm (5μm*5μm) | ||
| Isakhiwo | |||
| Ukuminyana kwe-Micropipe | <1 eya/cm2 | <10 kwe/cm2 | <15 kwe/cm2 |
| Ukungcola kwensimbi | ≤5E10 ama-athomu/cm2 | NA | |
| I-BPD | ≤1500 i-e/cm2 | ≤3000 i-e/cm2 | NA |
| I-TSD | ≤500 i-e/cm2 | ≤1000 i-e/cm2 | NA |
| Ikhwalithi Yangaphambili | |||
| Ngaphambili | Si | ||
| Ukuqedwa kobuso | I-Si-face CMP | ||
| Izinhlayiya | ≤60ea/wafer (usayizi≥0.3μm) | NA | |
| Ukuklwebheka | ≤5ea/mm. Ubude obuqongelelwe ≤Ububanzi | Ubude obuqongelelwe≤2*Ububanzi | NA |
| Ikhasi eliwolintshi/imigodi/amabala/ama-striations/ imifantu/ukungcola | Lutho | NA | |
| Ama-Edge chips/indents/fracture/hex plate | Lutho | ||
| Izindawo ze-Polytype | Lutho | Indawo eqoqiwe≤20% | Indawo eqoqiwe≤30% |
| Ukumaka kwe-laser yangaphambili | Lutho | ||
| Ikhwalithi Emuva | |||
| Emuva ekupheleni | C-face CMP | ||
| Ukuklwebheka | ≤5ea/mm, Ubude obuqongelelayo≤2*Ububanzi | NA | |
| Ukukhubazeka kwasemuva (ama-edge chips/indents) | Lutho | ||
| Ukuhwalala emuva | I-Ra≤0.2nm (5μm*5μm) | ||
| Ukumaka kwe-laser emuva | 1 mm (kusuka emaphethelweni aphezulu) | ||
| Umphetho | |||
| Umphetho | I-Chamfer | ||
| Ukupakisha | |||
| Ukupakisha | I-Epi-ilungile ngokufakwa kwe-vacuum Ukupakishwa kwekhasethi le-multi-wafer | ||
| *Amanothi: "NA" kusho ukuthi asikho isicelo Izinto ezingashiwongo zingabhekisa ku-SEMI-STD. | |||
