I-Semicera iyaziqhenya ukwethula i-Ga2O3I-substrate, into esezingeni eliphezulu esilungele ukuguqula amandla kagesi nama-optoelectronics.I-Gallium oxide (Ga2O3) ama-substrateszaziwa ngama-bandgap azo abanzi kakhulu, okuzenza zilungele amadivayisi anamandla aphezulu kanye namaza aphezulu.
Izici Eziyinhloko:
• I-Ultra-Wide Bandgap: Ga2I-O3 inikeza i-bandgap ecishe ibe ngu-4.8 eV, ithuthukisa kakhulu amandla ayo okuphatha ama-voltage aphezulu namazinga okushisa uma kuqhathaniswa nezinto ezivamile ezifana ne-Silicon ne-GaN.
• I-Voltage Yokuhlukana Okuphezulu: Ngenkambu yokwahlukana eyingqayizivele, iGa2O3I-substrateilungele amadivayisi adinga ukusebenza kwe-high-voltage, iqinisekisa ukusebenza kahle okukhulu nokuthembeka.
• Ukuzinza Kwe-Thermal: Ukuzinza kwe-thermal okuphezulu kakhulu kuyenza ifanele ukusetshenziswa ezindaweni ezibucayi, igcina ukusebenza ngisho nangaphansi kwezimo ezinzima.
• Izinhlelo Ezihlukahlukene: Ilungele ukusetshenziswa kuma-transistors asebenza kahle kakhulu, amadivaysi e-UV optoelectronic, nokunye okwengeziwe, okuhlinzeka ngesisekelo esiqinile samasistimu kagesi athuthukile.
Izwa ikusasa lobuchwepheshe be-semiconductor nge-Semicera'sGa2O3I-substrate. Idizayinelwe ukuhlangabezana nezidingo ezikhulayo zama-elekthronikhi anamandla aphezulu kanye nemvamisa ephezulu, le substrate ibeka izinga elisha lokusebenza nokuqina. Themba i-Semicera ukuletha izixazululo ezintsha zezinhlelo zakho zokusebenza eziyinselele kakhulu.
| Izinto | Ukukhiqiza | Ucwaningo | Dummy |
| I-Crystal Parameters | |||
| I-Polytype | 4H | ||
| Iphutha lokuma kobuso | <11-20 >4±0.15° | ||
| Amapharamitha kagesi | |||
| I-Dopant | n-uhlobo lweNitrojeni | ||
| Ukungazweli | 0.015-0.025ohm · cm | ||
| Mechanical Parameters | |||
| Ububanzi | 150.0±0.2mm | ||
| Ubukhulu | 350±25 μm | ||
| Umumo oyisicaba oyinhloko | [1-100]±5° | ||
| Ubude obuyisicaba obuyisisekelo | 47.5±1.5mm | ||
| Ifulethi lesibili | Lutho | ||
| I-TTV | ≤5 μm | ≤10 μm | ≤15 μm |
| I-LTV | ≤3 μm(5mm*5mm) | ≤5 μm(5mm*5mm) | ≤10 μm(5mm*5mm) |
| Khothama | -15μm ~ 15μm | -35μm ~ 35μm | -45μm ~ 45μm |
| I-Wap | ≤35 μm | ≤45 μm | ≤55 μm |
| Front(Si-face) roughness(AFM) | I-Ra≤0.2nm (5μm*5μm) | ||
| Isakhiwo | |||
| Ukuminyana kwe-Micropipe | <1 eya/cm2 | <10 kwe/cm2 | <15 kwe/cm2 |
| Ukungcola kwensimbi | ≤5E10 ama-athomu/cm2 | NA | |
| I-BPD | ≤1500 i-e/cm2 | ≤3000 i-e/cm2 | NA |
| I-TSD | ≤500 i-e/cm2 | ≤1000 i-e/cm2 | NA |
| Ikhwalithi Yangaphambili | |||
| Ngaphambili | Si | ||
| Ukuqedwa kobuso | I-Si-face CMP | ||
| Izinhlayiya | ≤60ea/wafer (usayizi≥0.3μm) | NA | |
| Ukuklwebheka | ≤5ea/mm. Ubude obuqongelelwe ≤Ububanzi | Ubude obuqongelelwe≤2*Ububanzi | NA |
| Ikhasi eliwolintshi/imigodi/amabala/ama-striations/ imifantu/ukungcola | Lutho | NA | |
| Ama-Edge chips/indents/fracture/hex plate | Lutho | ||
| Izindawo ze-Polytype | Lutho | Indawo eqoqiwe≤20% | Indawo eqoqiwe≤30% |
| Ukumaka kwe-laser yangaphambili | Lutho | ||
| Ikhwalithi Emuva | |||
| Emuva ekupheleni | C-face CMP | ||
| Ukuklwebheka | ≤5ea/mm, Ubude obuqongelelayo≤2*Ububanzi | NA | |
| Ukukhubazeka kwasemuva (ama-edge chips/indents) | Lutho | ||
| Ukuhwalala emuva | I-Ra≤0.2nm (5μm*5μm) | ||
| Ukumaka kwe-laser emuva | 1 mm (kusuka emaphethelweni aphezulu) | ||
| Umphetho | |||
| Umphetho | I-Chamfer | ||
| Ukupakisha | |||
| Ukupakisha | I-Epi-ilungile ngokufakwa kwe-vacuum Ukupakishwa kwekhasethi le-multi-wafer | ||
| *Amanothi: "NA" kusho ukuthi asikho isicelo Izinto ezingashiwongo zingabhekisa ku-SEMI-STD. | |||
