I-GaN Epitaxy

Incazelo emfushane:

I-GaN Epitaxy iyitshe legumbi ekukhiqizweni kwamadivayisi we-semiconductor asebenza kahle kakhulu, anikeza ukusebenza kahle okukhethekile, ukuzinza kwe-thermal, nokuthembeka. Izixazululo ze-Semicera's GaN Epitaxy zenzelwe ukuhlangabezana nezidingo zezinhlelo zokusebenza ezisezingeni eliphezulu, kuqinisekiswe ikhwalithi ephezulu nokungaguquguquki kulo lonke ungqimba.


Imininingwane Yomkhiqizo

Omaka bomkhiqizo

I-Semiceraiveza ngokuziqhenya unqenqemaI-GaN Epitaxyamasevisi, aklanyelwe ukuhlangabezana nezidingo ezihlala zivela zemboni ye-semiconductor. I-Gallium nitride (GaN) iwumsebenzi owaziwa ngezici zayo ezingavamile, futhi izinqubo zethu zokukhula kwe-epitaxial ziqinisekisa ukuthi lezi zinzuzo zitholwa ngokugcwele kumadivayisi akho.

Izendlalelo ze-GaN Ezisebenza Kakhulu I-Semiceraigxile ekukhiqizeni izinga eliphezuluI-GaN Epitaxyizingqimba, ezinikeza ubumsulwa bezinto ezingenakuqhathaniswa nobuqotho besakhiwo. Lezi zendlalelo zibalulekile ekusetshenzisweni okuhlukahlukene, kusukela kuma-electronics amandla kuya ku-optoelectronics, lapho ukusebenza okuphezulu nokuthembeka kubalulekile. Amasu ethu okukhula anembayo aqinisekisa ukuthi isendlalelo ngasinye se-GaN sihlangabezana nezindinganiso eziqondile ezidingekayo kumadivayisi aphambili.

Kwenzelwe Ukusebenza NgempumeleloII-GaN Epitaxyokuhlinzekwe yi-Semicera yakhelwe ngokukhethekile ukuthuthukisa ukusebenza kahle kwezingxenye zakho ze-elekthronikhi. Ngokuletha izendlalelo ze-GaN ezinesici esiphansi, ezihlanzeke kakhulu, sinika amandla amadivayisi ukuthi asebenze kumafrikhwensi aphezulu nama-voltage, ngokulahleka kwamandla okuncishisiwe. Lokhu kulungiselelwa kuyisihluthulelo sezinhlelo zokusebenza ezifana ne-high-electron-mobility transistors (HEMTs) nama-light-emitting diode (ama-LED), lapho ukusebenza kahle kubaluleke kakhulu.

Amandla Okusebenza Ahlukahlukene I-Semicera'sI-GaN Epitaxyiguquguquka, ihlinzekela uhla olubanzi lwezimboni kanye nezicelo. Kungakhathaliseki ukuthi uthuthukisa izikhulisamandla, izingxenye ze-RF, noma ama-laser diode, izendlalelo zethu ze-GaN epitaxial zinikeza isisekelo esidingekayo sokusebenza okuphezulu, amadivayisi athembekile. Inqubo yethu ingalungiselelwa ukuhlangabezana nezidingo ezithile, kuqinisekiswe ukuthi imikhiqizo yakho ithola imiphumela emihle.

Ukuzibophezela KukhwalithiIkhwalithi iyisisekelo seI-Semicera's approach toI-GaN Epitaxy. Sisebenzisa ubuchwepheshe obuthuthukisiwe bokukhula kwe-epitaxial kanye nezinyathelo zokulawula ikhwalithi eziqinile ukuze sikhiqize izendlalelo ze-GaN ezibonisa ukufana okuhle kakhulu, ukuminyana okunesici esiphansi, kanye nezakhiwo zezinto ezibonakalayo eziphezulu. Lokhu kuzibophezela kwikhwalithi kuqinisekisa ukuthi amadivayisi akho awahlangani nje kuphela kodwa adlule izindinganiso zomkhakha.

Amasu Okukhula Okusha I-Semiceraihamba phambili ekusunguleni izinto emkhakheni weI-GaN Epitaxy. Ithimba lethu liqhubeka lihlola izindlela ezintsha nobuchwepheshe bokuthuthukisa inqubo yokukhula, liletha izendlalelo ze-GaN ezinezici ezithuthukisiwe zikagesi nezokushisa. Lezi zinto ezintsha zihumushela kumadivayisi asebenza kangcono, akwazi ukuhlangabezana nezidingo zezinhlelo zokusebenza zesizukulwane esilandelayo.

Izixazululo ezenziwe ngezifiso zamaphrojekthi akhoNgokubona ukuthi iphrojekthi ngayinye inezidingo ezihlukile,I-SemiceraIzipesheli ezenziwe ngokwezifisoI-GaN Epitaxyizixazululo. Kungakhathaliseki ukuthi udinga amaphrofayili athile e-doping, ukujiya kwezingqimba, noma ukuqedwa kwendawo, sisebenza eduze nawe ukuze sithuthukise inqubo ehlangabezana nezidingo zakho ngqo. Umgomo wethu uwukukunikeza izendlalelo ze-GaN eziklanywe ngokunembile ukusekela ukusebenza nokuthembeka kwedivayisi yakho.

Izinto

Ukukhiqiza

Ucwaningo

Dummy

I-Crystal Parameters

I-Polytype

4H

Iphutha lokuma kobuso

<11-20 >4±0.15°

Amapharamitha kagesi

I-Dopant

n-uhlobo lweNitrojeni

Ukungazweli

0.015-0.025ohm · cm

Mechanical Parameters

Ububanzi

150.0±0.2mm

Ubukhulu

350±25 μm

Umumo oyisicaba oyinhloko

[1-100]±5°

Ubude obuyisicaba obuyisisekelo

47.5±1.5mm

Ifulethi lesibili

Lutho

I-TTV

≤5 μm

≤10 μm

≤15 μm

I-LTV

≤3 μm(5mm*5mm)

≤5 μm(5mm*5mm)

≤10 μm(5mm*5mm)

Khothama

-15μm ~ 15μm

-35μm ~ 35μm

-45μm ~ 45μm

I-Wap

≤35 μm

≤45 μm

≤55 μm

Front(Si-face) roughness(AFM)

I-Ra≤0.2nm (5μm*5μm)

Isakhiwo

Ukuminyana kwe-Micropipe

<1 eya/cm2

<10 kwe/cm2

<15 kwe/cm2

Ukungcola kwensimbi

≤5E10 ama-athomu/cm2

NA

I-BPD

≤1500 i-e/cm2

≤3000 i-e/cm2

NA

I-TSD

≤500 i-e/cm2

≤1000 i-e/cm2

NA

Ikhwalithi Yangaphambili

Ngaphambili

Si

Ukuqedwa kobuso

I-Si-face CMP

Izinhlayiya

≤60ea/wafer (usayizi≥0.3μm)

NA

Ukuklwebheka

≤5ea/mm. Ubude obuqongelelwe ≤Ububanzi

Ubude obuqongelelwe≤2*Ububanzi

NA

Ikhasi eliwolintshi/imigodi/amabala/imifantu/ukungcola

Lutho

NA

Ama-Edge chips/indents/fracture/hex plate

Lutho

Izindawo ze-Polytype

Lutho

Indawo eqoqiwe≤20%

Indawo eqoqiwe≤30%

Ukumaka kwe-laser yangaphambili

Lutho

Ikhwalithi Emuva

Emuva ekupheleni

C-face CMP

Ukuklwebheka

≤5ea/mm,Ubude obuqongelelayo≤2*Ububanzi

NA

Ukukhubazeka kwasemuva (ama-edge chips/indents)

Lutho

Ukuhwalala emuva

I-Ra≤0.2nm (5μm*5μm)

Ukumaka kwe-laser emuva

1 mm (kusuka emaphethelweni aphezulu)

Umphetho

Umphetho

I-Chamfer

Ukupakisha

Ukupakisha

I-Epi-ilungile ngokufakwa kwe-vacuum

Ukupakishwa kwekhasethi le-multi-wafer

*Amanothi: "NA" kusho ukuthi asikho isicelo Izinto ezingashiwongo zingabhekisa ku-SEMI-STD.

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Ama-wafers e-SiC

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