Incazelo
I-Graphite Susceptor ngeI-Silicon Carbide Coating, 6 iziqephuInkampani yenethiwekhi ye-wafer eyi-intshi engu-6kusuka ku-semicera kunikeza ukuqina okukhethekile kanye ne-thermal conductivity yezinhlelo zokusebenza ezisebenza kahle zokukhula kwe-epitaxial. I-Semicera igxile kakhulu kuma-susceptors athuthukile aklanyelwe ukuthuthukisa izinqubo ezifanaI-EpitaxyfuthiI-SiC Epitaxy, ukuqinisekisa ukusebenza okuthembekile ezindaweni ezidingayo ze-semiconductor.
Lesi sici siklanyelwe ukusetshenziswa neI-MOCVD SusceptorAmasistimu futhi inikeza ukuhambisana nabathwali abahlukahlukene njenge-PSS Etching Carrier, I-ICP Etching Carrier, ne-RTP Carrier. Ilungele ukukhiqizwa kwe-Monocrystalline Silicon kanye nokusetha kwe-LED Epitaxial Susceptor, ehlinzeka ngokuguquguqukayo ekucushweni okuhlukene, okuhlanganisa imiklamo ye-Barrel Susceptor ne-Pancake Susceptor.
I-Graphite Susceptor ene-Silicon Carbide Coating iphinde isekele izinhlelo zokusebenza emkhakheni wamandla elanga ngokuhlanganiswa kwayo ne-Photovoltaic Parts futhi ihamba phambili ku-GaN kuzinqubo ze-SiC Epitaxy. Umthamo wayo we-wafer carrier ongu-6 intshi uqinisekisa ukuphuma okuphezulu, okuyenza ibe ithuluzi elibalulekile kubakhiqizi bezimboni ze-semiconductor kanye ne-photovoltaic.
Izici Eziyinhloko
1 .Ukuhlanzeka okuphezulu kwe-SiC ehlanganiswe ne-graphite
2. Ukumelana nokushisa okuphezulu & ukufana okushisayo
3. KuhleI-SiC crystal coatedindawo ebushelelezi
4. Ukuqina okuphezulu ngokumelene nokuhlanza amakhemikhali
Ukucaciswa Okuyinhloko Kwezingubo Ze-CVD-SIC:
I-SiC-CVD | ||
Ukuminyana | (g/cc) | 3.21 |
Amandla e-Flexural | (Mpa) | 470 |
Ukunwetshwa kwe-thermal | (10-6/K) | 4 |
I-Thermal conductivity | (W/mK) | 300 |
Ukupakisha Nokuthumela
Ikhono Lokuhlinzeka:
10000 Ucezu/Izingcezu Ngenyanga
Ukupakishwa Nokulethwa:
Ukupakisha:Ukupakisha Okujwayelekile & Okuqinile
Isikhwama sePoly + Ibhokisi + Ibhokisi + Iphalethi
Imbobo:
Ningbo/Shenzhen/Shanghai
Isikhathi esiholayo:
Ubuningi(Izingcezu) | 1-1000 | > 1000 |
Est. Isikhathi(izinsuku) | 30 | Kuzoxoxiswana |