Ukuhlanzeka okuphezulu kwe-SiC Carrier/Susceptor

Incazelo emfushane:

I-Silicon carbide bearing disc yaziwa nangokuthi i-SIC tray, i-silicon carbide etching disc, i-ICP etching disc. Ithreyi ye-silicon carbide yokunamathisela kwe-LED (ithreyi ye-SiC) φ600mm iyisesekeli esikhethekile se-silicon etching ejulile (umshini wokufaka i-ICP).

Thumela i-imeyili kithi

Imininingwane Yomkhiqizo

Omaka bomkhiqizo

Incazelo

Ama-ceramics e-silicon carbide anezakhiwo ezinhle kakhulu zemishini ekamelweni lokushisa, njengamandla aphezulu, ukuqina okuphezulu, i-modulus ephezulu yokunwebeka, njll., futhi inokuqina okuhle kakhulu kwezinga lokushisa eliphezulu njengokuhamba okuphezulu kwe-thermal, i-coefficient ephansi yokwanda okushisayo, nokuqina okuhle okuqondile nokubonakalayo. ukusebenza kokucubungula.
Zifaneleka ngokukhethekile ukukhiqiza izingxenye ze-ceramic ezinembayo zemishini yesekethe edidiyelwe njengemishini ye-lithography, ikakhulukazi esetshenziselwa ukwakhiwa kwe-SiC carrier/susceptor, i-SiC wafer boat, i-sucking disc, ipuleti lokupholisa amanzi, isibonisi sokulinganisa ukunemba, igridi nezinye izingxenye zesakhiwo se-ceramic.

umthwali2

umthwali3

umthwali4

Izinzuzo

Ukumelana nokushisa okuphezulu: ukusetshenziswa okuvamile ku-1800 ℃
High conductivity ezishisayo: okulingana graphite impahla
Ukuqina okuphezulu: ubulukhuni okwesibili kuphela kwedayimane, i-boron nitride
Ukumelana nokugqwala: i-asidi eqinile ne-alkali ayinayo ukugqwala kuyo, ukumelana nokugqwala kungcono kune-tungsten carbide ne-alumina.
Isisindo esilula: ukuminyana okuphansi, eduze ne-aluminium
Akukho ukuguqulwa: i-coefficient ephansi yokwanda okushisayo
Ukumelana nokushaqeka kwe-thermal: ingakwazi ukumelana nokushintsha kwezinga lokushisa okubukhali, ukumelana nokushaqeka kokushisa, futhi inokusebenza okuzinzile
Isithwali se-silicon carbide njenge-sic etching carrier, i-ICP etching susceptor, isetshenziswa kakhulu ku-semiconductor CVD, i-vacuum sputtering njll. Singanikeza amakhasimende izithwali ezilucwecwana ezenziwe ngokwezifiso ze-silicon nezinto ze-silicon carbide ukuhlangabezana nezinhlelo zokusebenza ezahlukene.

Izinzuzo

Impahla	Inani	Indlela
Ukuminyana	3.21 g/cc	Sink-float kanye nobukhulu
Ukushisa okuqondile	0.66 J/g °K	I-Pulsed laser flash
Amandla e-Flexural	450 MPa560 MPa	4 iphuzu ukugoba, RT4 iphuzu ukugoba, 1300°
Ukuqina kokuphuka	2.94 MPa m1/2	I-Microindentation
Ukuqina	2800	Vicker, 500g umthwalo
I-Elastic ModulusYoung's Modulus	450 GPA430 GPA	4 pt ukugoba, RT4 pt ukugoba, 1300 °C
Usayizi wokusanhlamvu	2 - 10 µm	I-SEM

Iphrofayela Yenkampani

I-WeiTai Energy Technology Co., Ltd. ingumhlinzeki oholayo wezitsha zobumba ezithuthukisiwe ze-semiconductor futhi okuwukuphela komkhiqizi e-China ongahlinzeka ngasikhathi sinye ukuhlanzeka okuphezulu kwe-silicon carbide ceramic (ikakhulukazi i-Recrystallized SiC) kanye ne-CVD SiC coating. Ngaphezu kwalokho, inkampani yethu izibophezele nasezindaweni zobumba ezifana ne-alumina, i-aluminium nitride, i-zirconia, ne-silicon nitride, njll.

Imikhiqizo yethu eyinhloko ihlanganisa: i-silicon carbide etching disc, i-silicon carbide boat tow, isikebhe se-silicon carbide wafer (Photovoltaic&Semiconductor), ishubhu le-silicon carbide furnace, i-silicon carbide cantilever paddle, i-silicon carbide chucks, i-silicon carbide beam, kanye ne-CVD SiC coating kanye ne-TaC enamathela. Imikhiqizo esetshenziswa kakhulu ezimbonini ze-semiconductor kanye ne-photovoltaic, njengemishini yokukhula kwekristalu, i-epitaxy, i-etching, ukupakisha, i-coating ne-diffusion furnaces, njll.
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