I-Silicon carbide (SiC)isiba yinketho ekhethwayo ngokushesha kune-silicon yezingxenye ze-elekthronikhi, ikakhulukazi ezinhlelweni ezibanzi ze-bandgap. I-SiC inikezela ngokusebenza kahle kwamandla okuthuthukisiwe, usayizi ohlangene, isisindo esincishisiwe, kanye nezindleko eziphansi zesistimu.
Isidingo sezimpushana ze-SiC ezihlanzekile kakhulu ezimbonini ze-electronics kanye ne-semiconductor siqhube i-Semicera ukuthuthukisa ubumsulwa obuphezulu.I-SiC powder. Indlela entsha ye-Semicera yokukhiqiza i-SiC ehlanzeke kakhulu iphumela kuzimpushana ezibonisa izinguquko ze-morphology ebushelelezi, ukusetshenziswa okunensayo kwezinto ezibonakalayo, nokusebenzelana kokukhula okuzinzile ekusetheni ukukhula kwekristalu.
Impushana yethu ye-SiC ehlanzekile iyatholakala ngobukhulu obuhlukahlukene futhi ingenziwa ngokwezifiso ukuze ihlangabezane nezidingo ezithile zamakhasimende. Ukuze uthole imininingwane eyengeziwe futhi uxoxe ngephrojekthi yakho, sicela uthinte i-Semicera.
1. Ibanga likasayizi we-particle:
Ukumboza i-submicron kuya esikalini samamilimitha.
2. Impuphu Ukuhlanzeka
Umbiko wokuhlola we-4N
3.Amakristalu Ompusha
Ukumboza i-submicron kuya esikalini samamilimitha.
4. I-Microscopic Morphology
5. I-Macroscopic Morphology
