I-Silicon carbide (SiC)isiba yinketho ekhethwayo ngokushesha kune-silicon yezingxenye ze-elekthronikhi, ikakhulukazi ezinhlelweni ezibanzi ze-bandgap. I-SiC inikezela ngokusebenza kahle kwamandla okuthuthukisiwe, usayizi ohlangene, isisindo esincishisiwe, kanye nezindleko eziphansi zesistimu.
Isidingo sezimpushana ze-SiC ezihlanzekile kakhulu ezimbonini ze-electronics kanye ne-semiconductor siqhube i-Semicera ukuthuthukisa ukuhlanzeka okuphezulu okuphezulu.I-SiC powder. Indlela entsha ye-Semicera yokukhiqiza i-SiC ehlanzeke kakhulu iphumela kuzimpushana ezibonisa izinguquko ze-morphology ebushelelezi, ukusetshenziswa okunensayo kwezinto ezibonakalayo, nokusebenzelana kokukhula okuzinzile ekusetheni ukukhula kwekristalu.
I-SiC powder yethu ye-high-purity itholakala ngobukhulu obuhlukahlukene futhi ingenziwa ngokwezifiso ukuze ihlangabezane nezidingo ezithile zamakhasimende. Ukuze uthole imininingwane eyengeziwe futhi uxoxe ngephrojekthi yakho, sicela uthinte i-Semicera.
1. Ibanga likasayizi we-particle:
Ukumboza i-submicron kuya esikalini samamilimitha.




2. Impuphu Ukuhlanzeka


Umbiko wokuhlola we-4N
3.Amakristalu Ompusha
Ukumboza i-submicron kuya esikalini samamilimitha.


4. I-Microscopic Morphology


5. I-Macroscopic Morphology

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I-Silicon Carbide Ceramics (SIC) Seal Ring
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Izingxenye zesakhiwo se-silicon carbide zingenziwa ngezifiso
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I-silicon carbide nozz imelana nokushisa okuphezulu...
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Isibuko se-SIC isibuko se-silicon carbide ceramic mirro...
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I-Silicon Carbide Gas Sealing Rings
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Ukuhlanzeka okuphezulu kwe-CVD Silicon Carbide impahla eluhlaza