I-High Purity Silicon Carbide Paddle

Incazelo emfushane:

I-Semicera High Purity Silicon Carbide Paddle yakhelwe izinhlelo zokusebenza ezithuthukisiwe ze-semiconductor, ehlinzeka ngokuqina okushisayo okuphakeme namandla emishini. Le SiC Paddle iqinisekisa ukuphatha okuyisicwecwana okunembe, okuyenza ibe inketho ekahle ezindaweni ezinezinga lokushisa eliphezulu. Xhumana nathi ukuze uthole imibuzo!


Imininingwane Yomkhiqizo

Omaka bomkhiqizo

I-Semicera High PurityI-Silicon Carbide Paddleiklanywe ngobunono ukuze ihlangabezane nezidingo eziqinile zezinqubo zesimanje zokukhiqiza i-semiconductor. LokhuI-SiC Cantilever Paddleidlula kakhulu ezindaweni ezinezinga lokushisa eliphezulu, enikeza ukuzinza okushisayo okungenakuqhathaniswa nokuqina kwemishini. Isakhiwo se-SiC Cantilever yakhelwe ukumelana nezimo ezimbi kakhulu, iqinisekisa ukuphathwa okuthembekile kwe-wafer kuzo zonke izinqubo ezihlukahlukene.

Enye yezinto ezintsha ezibalulekile ze-I-SiC Paddleumklamo wayo ongasindi kodwa oqinile, ovumela ukuhlanganiswa okulula kumasistimu akhona. I-thermal conductivity yayo ephezulu isiza ukugcina ukuqina kwe-wafer phakathi nezigaba ezibucayi njengokuqopha nokubeka, ukunciphisa ubungozi bokulimala kwe-wafer nokuqinisekisa isivuno esiphezulu sokukhiqiza. Ukusetshenziswa kwe-silicon carbide esezingeni eliphakeme ekwakhiweni kwe-paddle kuthuthukisa ukumelana kwayo nokuguga, kunikeze impilo yokusebenza enwetshiwe futhi kunciphise isidingo sokushintshwa njalo.

I-Semicera igcizelela kakhulu ukuqanjwa kabusha, ukuletha aI-SiC Cantilever Paddlelokho akuhlangani nje kuphela kodwa kweqa amazinga emboni. Lokhu gwedla kulungiselelwe ukusetshenziswa ezinhlelweni ezahlukene ze-semiconductor, ukusuka ekubekweni kuye ekuqoshweni, lapho ukunemba nokuthembeka kubalulekile. Ngokuhlanganisa lobu buchwepheshe obusezingeni eliphezulu, abakhiqizi bangalindela ukusebenza kahle okuthuthukisiwe, izindleko ezincishisiwe zokulungisa, kanye nekhwalithi yomkhiqizo engaguquki.

Izakhiwo ezibonakalayo ze-Recrystallized Silicon Carbide

Impahla

Inani Elijwayelekile

Izinga lokushisa lokusebenza (°C)

1600°C (nomoya-mpilo), 1700°C (ukunciphisa imvelo)

Okuqukethwe kwe-SiC

> 99.96%

Mahhala Si okuqukethwe

< 0.1%

Ukuminyana ngobuningi

2.60-2.70 g/cm3

I-porosity ebonakalayo

< 16%

Amandla okucindezela

> 600 MPa

Amandla okugoba abandayo

80-90 MPa (20°C)

Amandla okugoba ashisayo

90-100 MPa (1400°C)

Ukunwetshwa kwe-Thermal @1500°C

4.70 10-6/°C

I-Thermal conductivity @1200°C

23 W/m•K

I-Elastic module

240 GPA

Ukumelana nokushaqeka okushisayo

Kuhle ngokwedlulele

0f75f96b9a8d9016a504c0c47e59375
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