I-Semicera High PurityI-Silicon Carbide Paddleiklanywe ngobunono ukuze ihlangabezane nezidingo eziqinile zezinqubo zesimanje zokukhiqiza i-semiconductor. LokhuI-SiC Cantilever Paddleidlula kakhulu ezindaweni ezinezinga lokushisa eliphezulu, enikeza ukuzinza okushisayo okungenakuqhathaniswa nokuqina kwemishini. Isakhiwo se-SiC Cantilever yakhelwe ukumelana nezimo ezimbi kakhulu, iqinisekisa ukuphathwa okuthembekile kwe-wafer kuzo zonke izinqubo ezihlukahlukene.
Enye yezinto ezintsha ezibalulekile ze-I-SiC Paddleumklamo wayo ongasindi kodwa oqinile, ovumela ukuhlanganiswa okulula kumasistimu akhona. I-thermal conductivity yayo ephezulu isiza ukugcina ukuqina kwe-wafer phakathi nezigaba ezibucayi njengokuqopha nokubeka, ukunciphisa ubungozi bokulimala kwe-wafer nokuqinisekisa isivuno esiphezulu sokukhiqiza. Ukusetshenziswa kwe-silicon carbide esezingeni eliphakeme ekwakhiweni kwe-paddle kuthuthukisa ukumelana kwayo nokuguga, kunikeze impilo yokusebenza enwetshiwe futhi kunciphise isidingo sokushintshwa njalo.
I-Semicera igcizelela kakhulu ukuqanjwa kabusha, ukuletha aI-SiC Cantilever Paddlelokho akuhlangani nje kuphela kodwa kweqa amazinga emboni. Lokhu gwedla kulungiselelwe ukusetshenziswa ezinhlelweni ezahlukene ze-semiconductor, ukusuka ekubekweni kuye ekuqoshweni, lapho ukunemba nokuthembeka kubalulekile. Ngokuhlanganisa lobu buchwepheshe obusezingeni eliphezulu, abakhiqizi bangalindela ukusebenza kahle okuthuthukisiwe, izindleko ezincishisiwe zokulungisa, kanye nekhwalithi yomkhiqizo engaguquki.
Izakhiwo ezibonakalayo ze-Recrystallized Silicon Carbide | |
Impahla | Inani Elijwayelekile |
Izinga lokushisa lokusebenza (°C) | 1600°C (nomoya-mpilo), 1700°C (ukunciphisa imvelo) |
Okuqukethwe kwe-SiC | > 99.96% |
Mahhala Si okuqukethwe | < 0.1% |
Ukuminyana ngobuningi | 2.60-2.70 g/cm3 |
I-porosity ebonakalayo | < 16% |
Amandla okucindezela | > 600 MPa |
Amandla okugoba abandayo | 80-90 MPa (20°C) |
Amandla okugoba ashisayo | 90-100 MPa (1400°C) |
Ukunwetshwa kwe-Thermal @1500°C | 4.70 10-6/°C |
I-Thermal conductivity @1200°C | 23 W/m•K |
I-Elastic module | 240 GPA |
Ukumelana nokushaqeka okushisayo | Kuhle ngokwedlulele |