Ukuhlanzeka okuphezulu kwe-silicon carbide powder semiconductor impahla eluhlaza enobumsulwa obufika ku-6N

Incazelo emfushane:

I-Semicera Semiconductor Technology Co., Ltd. iyibhizinisi lobuchwepheshe obuphezulu elasungulwa e-China, Sihlinzeka ngochwepheshe. Ukuhlanzeka okuphezulu kwe-silicon carbide powder semiconductor impahla eluhlaza enobumsulwa obufika ku-6N umenzi kanye nomphakeli.

 

 


Imininingwane Yomkhiqizo

Omaka bomkhiqizo

Silicon Carbide (SiC) Uhlolojikelele Powder

I-Silicon carbide (SiC), eyaziwa nangokuthi i-carborundum noma i-emery, ingenye yezinto ezisetshenziswa kakhulu futhi ezongayo. I-SiC itholakala ngezindlela ezimbili: i-silicon carbide emnyama ne-silicon carbide eluhlaza.

Inqubo Yokukhiqiza

I-SiC ikhiqizwa ngokuncibilikisa isihlabathi se-quartz, i-petroleum coke, noma i-coal tar, nama-wood chips emazingeni okushisa aphezulu esithandweni sokumelana. I-silicon carbide eluhlaza yenziwe ngokukhethekile ngokuncibilikisa i-silicon dioxide yekhwalithi ephezulu kanye ne-petroleum coke, nosawoti wengezwe njengesithako.

Izakhiwo Nezicelo

-Ubunzima:Iwa phakathi kwe-corundum nedayimane.

-Amandla Mechanical:Iphakeme kune-corundum, i-brittle, futhi ibukhali.

-Conductivity:Inokushintshwa okuthile kukagesi kanye ne-thermal.

Ngenxa yalezi zakhiwo, i-SiC ilungele izinhlelo zokusebenza ezidinga ukuqina nokuphathwa okushisayo. Isetshenziswa kakhulu ezimbonini ezinjengama-abrasives, ama-refractories, nama-semiconductors.

Ukuhlanzeka okuphezulu kwe-silicon carbide powder
高纯碳粉-应用.jpg (1)

Izici ze-Silicon Carbide

1. Ukwandiswa Okuphansi Kokushisa:Yehlisa izinguquko kusayizi ngokushintshashintsha kwezinga lokushisa.
2. High Thermal Conductivity:Idlulisa kahle ukushisa.
3. Ukumelana Nokucindezeleka Okushisayo:Yehlisa amathuba okuba nengcindezi yokushisa.
4. Ukumelana Okuhle Kakhulu Kwe-Thermal Shock:Imelana nokushintsha kwezinga lokushisa okusheshayo.
5. Ukumelana Nokugqwala:Ihlala isikhathi eside ngokumelene nokulimala kwamakhemikhali.
6. Ukubekezelelana Kwamazinga Okushisa Kakhulu: Isebenza kahle kuzo zombili izindawo ezibanda kakhulu nezishisayo.
7. I-High-Temperature Creep Resistance:Igcina ukuzinza namandla emazingeni okushisa aphezulu.

未标题-2

I-Semicera ingenza ngokwezifiso i-4N-6N silicon carbide powder ngokwezidingo zakho, wamukelekile ukubuza.

OKUQUKETHWE IKHEMIkhali

I-SiC

98% iminithi

SiO2

1% ubuningi

I-H2O3

0.5% ubuningi

Fe2O3

0.4% ubuningi

FC

0.4% ubuningi

Izinto Zezibuthe

0.02% ubuningi

IZIMPAHLA ZOMZIMBA

Ukuqina kukaMoh

9.2

I-Melting Point

2300 ℃

Izinga Lokushisa Lokusebenza

1900 ℃

I-Gravity ethize

3.2-3.45 g/cm3

Ukuminyana kwenqwaba

1.2-1.6 g/cm3

Umbala

Mnyama

I-Elasticity Modulus

58-65x106psi

I-Coefficient of Thermal Expansion

3.9-4.5 x10-6/℃

I-Thermal Conductivity

71-130 W/mK

Usayizi Wokusanhlamvu

0-1mm,1-3 mm, 3-5mm, 5-8mm,6/10, 10/18,200-0mesh,325mesh,320mesh,400mesh,600mesh,800mesh,1000mesh,
#24,#36,#46,#60,#80,#100,#120,#180,#220,#240...Okunye okukhethekile. ingahlinzekwa njengoba kudingeka.

 


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