Silicon Carbide (SiC) Uhlolojikelele Powder
I-Silicon carbide (SiC), eyaziwa nangokuthi i-carborundum noma i-emery, ingenye yezinto ezisetshenziswa kakhulu futhi ezongayo. I-SiC itholakala ngezindlela ezimbili: i-silicon carbide emnyama ne-silicon carbide eluhlaza.
Inqubo Yokukhiqiza
I-SiC ikhiqizwa ngokuncibilikisa isihlabathi se-quartz, i-petroleum coke, noma i-coal tar, nama-wood chips emazingeni okushisa aphezulu esithandweni sokumelana. I-silicon carbide eluhlaza yenziwe ngokukhethekile ngokuncibilikisa i-silicon dioxide yekhwalithi ephezulu kanye ne-petroleum coke, nosawoti wengezwe njengesithako.
Izakhiwo Nezicelo
-Ubunzima:Iwa phakathi kwe-corundum nedayimane.
-Amandla Mechanical:Iphakeme kune-corundum, i-brittle, futhi ibukhali.
-Conductivity:Inokushintshwa okuthile kukagesi kanye ne-thermal.
Ngenxa yalezi zakhiwo, i-SiC ilungele izinhlelo zokusebenza ezidinga ukuqina nokuphathwa okushisayo. Isetshenziswa kakhulu ezimbonini ezinjengama-abrasives, ama-refractories, nama-semiconductors.
Izici ze-Silicon Carbide
1. Ukwandiswa Okuphansi Kokushisa:Yehlisa izinguquko kusayizi ngokushintshashintsha kwezinga lokushisa.
2. High Thermal Conductivity:Idlulisa kahle ukushisa.
3. Ukumelana Nokucindezeleka Okushisayo:Yehlisa amathuba okuba nengcindezi yokushisa.
4. Ukumelana Okuhle Kakhulu Kwe-Thermal Shock:Imelana nokushintsha kwezinga lokushisa okusheshayo.
5. Ukumelana Nokugqwala:Ihlala isikhathi eside ngokumelene nokulimala kwamakhemikhali.
6. Ukubekezelelana Kwamazinga Okushisa Kakhulu: Isebenza kahle kuzo zombili izindawo ezibanda kakhulu nezishisayo.
7. I-High-Temperature Creep Resistance:Igcina ukuzinza namandla emazingeni okushisa aphezulu.
I-Semicera ingenza ngokwezifiso i-4N-6N silicon carbide powder ngokwezidingo zakho, wamukelekile ukubuza.
OKUQUKETHWE IKHEMIkhali | |
I-SiC | 98% iminithi |
SiO2 | 1% ubuningi |
I-H2O3 | 0.5% ubuningi |
Fe2O3 | 0.4% ubuningi |
FC | 0.4% ubuningi |
Izinto Zezibuthe | 0.02% ubuningi |
IZIMPAHLA ZOMZIMBA | |
Ukuqina kukaMoh | 9.2 |
I-Melting Point | 2300 ℃ |
Izinga Lokushisa Lokusebenza | 1900 ℃ |
I-Gravity ethize | 3.2-3.45 g/cm3 |
Ukuminyana kwenqwaba | 1.2-1.6 g/cm3 |
Umbala | Mnyama |
I-Elasticity Modulus | 58-65x106psi |
I-Coefficient of Thermal Expansion | 3.9-4.5 x10-6/℃ |
I-Thermal Conductivity | 71-130 W/mK |
Usayizi Wokusanhlamvu | |
0-1mm,1-3 mm, 3-5mm, 5-8mm,6/10, 10/18,200-0mesh,325mesh,320mesh,400mesh,600mesh,800mesh,1000mesh, |