I-Semicera yethula i-semiconductor yekhwalithi ephezului-silicon carbide cantilever paddles, eklanyelwe ukuhlangabezana nezidingo eziqinile zokukhiqiza i-semiconductor yesimanje.
Iisikhwama se-silicon carbideihlanganisa idizayini ethuthukisiwe enciphisa ukunwebeka okushisayo kanye nokungqubuzana, okuyenza ithembeke kakhulu ezimeni ezimbi kakhulu. Ukwakhiwa kwayo okuqinile kunikeza ukuqina okuthuthukisiwe, kunciphisa ingozi yokuphuka noma ukuguga, okubalulekile ekugcineni isivuno esiphezulu kanye nekhwalithi yokukhiqiza engaguquki. Iisikebhe esilucwecwanaukuklama futhi kuhlanganisa ngaphandle komthungo nemishini evamile yokucubungula i-semiconductor, iqinisekisa ukuhambisana nokusebenziseka kalula.
Esinye sezici ezivelele zeSemiceraIsigwedlo se-SiCukumelana kwayo namakhemikhali, okuyivumela ukuthi isebenze kahle kakhulu ezindaweni ezichayeke kumagesi agqwalayo namakhemikhali. Ukugxila kwe-Semicera ekwenzeni ngokwezifiso kuvumela izixazululo ezihambisanayo.
| Izakhiwo ezibonakalayo ze-Recrystallized Silicon Carbide | |
| Impahla | Inani Elijwayelekile |
| Izinga lokushisa lokusebenza (°C) | 1600°C (nomoya-mpilo), 1700°C (ukunciphisa imvelo) |
| Okuqukethwe kwe-SiC | > 99.96% |
| Mahhala Si okuqukethwe | < 0.1% |
| Ukuminyana ngobuningi | 2.60-2.70 g/cm3 |
| I-porosity ebonakalayo | < 16% |
| Amandla okucindezela | > 600 MPa |
| Amandla okugoba abandayo | 80-90 MPa (20°C) |
| Amandla okugoba ashisayo | 90-100 MPa (1400°C) |
| Ukunwetshwa kwe-Thermal @1500°C | 4.70 10-6/°C |
| I-Thermal conductivity @1200°C | 23 W/m•K |
| I-Elastic module | 240 GPA |
| Ukumelana nokushaqeka okushisayo | Kuhle ngokwedlulele |
