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Amathreyi ephini we-SiC ezinqubo zokushumeka ze-ICP embonini ye-LED

Amathreyi ephini we-SiC wezinqubo zokunamathisela kwe-ICP embonini ye-LED Isithombe Esifakiwe
  • Amathreyi ephini we-SiC ezinqubo zokushumeka ze-ICP embonini ye-LED

Incazelo emfushane:

I-Silicon carbide iwuhlobo olusha lwe-ceramics olusebenza ngezindleko eziphakeme kanye nezakhiwo ezinhle kakhulu zezinto ezibonakalayo. Ngenxa yezici ezinjengamandla aphezulu nobulukhuni, ukumelana nokushisa okuphezulu, ukuguquguquka okukhulu kokushisa kanye nokumelana nokubola kwamakhemikhali, i-Silicon Carbide icishe imelane nayo yonke into yamakhemikhali. Ngakho-ke, i-SiC isetshenziswa kabanzi ezimayini zikawoyela, amakhemikhali, imishini kanye ne-airspace, ngisho namandla enuzi kanye nezempi zinezidingo zabo ezikhethekile ku-SIC.

Siyakwazi ukuklama nokwenza ngokuvumelana nobukhulu bakho obuthile ngekhwalithi enhle nesikhathi sokuletha esinengqondo.


Imininingwane Yomkhiqizo

Omaka bomkhiqizo

Incazelo Yomkhiqizo

Inkampani yethu ihlinzeka ngezinsizakalo zenqubo yokuhlanganisa ye-SiC ngendlela ye-CVD ebusweni be-graphite, i-ceramics nezinye izinto, ukuze amagesi akhethekile aqukethe i-carbon ne-silicon aphendule ekushiseni okuphezulu ukuze athole ukuhlanzeka okuphezulu kwama-molecule e-SiC, ama-molecule afakwe ebusweni bezinto ezimboziwe, ukwakha isendlalelo sokuzivikela se-SIC.

Izici eziyinhloko:

1. Ukumelana nokushisa okuphezulu kwe-oxidation:

ukumelana ne-oxidation kusekuhle kakhulu lapho izinga lokushisa liphezulu njenge-1600 C.

2. Ukuhlanzeka okuphezulu : okwenziwe yi-chemical vapor deposition ngaphansi kwesimo sokushisa okuphezulu kwe-chlorination.

3. Ukumelana nokuguguleka: ubulukhuni obuphezulu, indawo ehlangene, izinhlayiya ezinhle.

4. Ukumelana nokugqwala: i-asidi, i-alkali, usawoti kanye nama-organic reagents.

I-silicon carbide etched disk (2)

Ukucaciswa Okuyinhloko kwe-CVD-SIC Coating

Izakhiwo ze-SiC-CVD

Isakhiwo Sekristalu

I-FCC β isigaba

Ukuminyana

g/cm³

3.21

Ukuqina

Vickers ubulukhuni

2500

Usayizi Wokusanhlamvu

μm

2~10

I-Chemical Purity

%

99.99995

Amandla Okushisa

J·kg-1 ·K-1

640

I-Sublimation Temperature

℃

2700

Amandla E-Felexural

I-MPa (RT 4-point)

415

I-Modulus Encane

I-Gpa (4pt bend, 1300℃)

430

I-Thermal Expansion (CTE)

10-6K-1

4.5

I-Thermal conductivity

(W/mK)

300
Semicera Indawo yokusebenza
Indawo yokusebenza ye-Semicera 2
Umshini wezinsimbi
Ukucubungula kwe-CNN, ukuhlanzwa kwamakhemikhali, i-CVD coating
Inkonzo yethu
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