I-InP ne-CdTe Substrate

Incazelo emfushane:

Izixazululo ze-InP ze-Semicera kanye ne-CdTe Substrate zenzelwe izinhlelo zokusebenza ezisebenza kahle kakhulu kuma-semiconductor nezimboni zamandla elanga. Ama-substrates e-InP (Indium Phosphide) kanye ne-CdTe (Cadmium Telluride) ahlinzeka ngezinto ezibonakalayo ezihlukile, ezihlanganisa ukusebenza kahle okuphezulu, ukuqhutshwa kukagesi okuhle kakhulu, nokuzinza okuqinile kwe-thermal. Lawa ma-substrates alungele ukusetshenziswa kumadivayisi e-optoelectronic athuthukile, ama-high-frequency transistors, namaseli elanga anefilimu emincane, ahlinzeka ngesisekelo esithembekile sobuchwepheshe besimanje.


Imininingwane Yomkhiqizo

Omaka bomkhiqizo

Mayelana ne-Semicera'sI-InP ne-CdTe Substrate, ungalindela ikhwalithi ephezulu nokunemba okuklanyelwe ukuhlangabezana nezidingo ezithile zezinqubo zakho zokukhiqiza. Kungakhathaliseki ukuthi ngezinhlelo zokusebenza ze-photovoltaic noma amadivayisi we-semiconductor, ama-substrates ethu akhiwe ukuze kuqinisekiswe ukusebenza kahle, ukuqina, nokuvumelana. Njengomphakeli othembekile, i-Semicera izibophezele ekuletheni izixazululo ze-substrate ezisezingeni eliphezulu, ezenziwe ngezifiso eziqhuba ubuhlakani obusha emikhakheni ye-elekthronikhi kanye namandla avuselelekayo.

I-Crystalline kanye nezakhiwo zikagesi1

Uhlobo
I-Dopant
EPD (cm–2(Bheka ngezansi A.)
I-DF (Indawo Engenayo Isici) (cm2, Bheka ngezansi B.)
c/(ccm–3
I-Mobilit (y cm2/Vs)
I-Resistivit (y Ω・cm)
n
Sn
≦5×104
≦1×104
≦5×103
──────
 

(0.5〜6)×1018
──────
──────
n
S
──────
≧ 10(59.4%)
≧ 15(87%).4
(2〜10)×1018
──────
──────
p
Zn
──────
≧ 10(59.4%)
≧ 15(87%).
(3〜6)×1018
──────
──────
SI
Fe
≦5×104
≦1×104
──────
──────
──────
≧ 1×106
n
akukho
≦5×104
──────
≦1×1016
≧ 4×103
──────
1 Eminye imininingwane iyatholakala uma uyicela.

A.13 Amaphuzu Amaphakathi

1. Ukuminyana kwe-etch pit kukalwa ngamaphoyinti ayi-13.

2. Indawo enesisindo esimaphakathi sokuminyana kokususwa ibalwa.

Isilinganiso Sendawo ye-B.DF (Esimeni Sesiqinisekiso Sendawo)

1. Ukuminyana kwe-etch pit yamaphoyinti angama-69 aboniswe kwesokudla kuyabalwa.

2. I-DF ichazwa ngokuthi i-EPD engaphansi kuka-500cm–2
3. Indawo enkulu ye-DF elinganiswa ngale ndlela ingu-17.25cm2
I-InP ne-CdTe Substrate (2)
I-InP ne-CdTe Substrate (1)
I-InP ne-CdTe Substrate (3)

I-InP Single Crystal Substrates Izicaciso Ezivamile

1. Ukuqondisa
Umumo womphezulu (100)±0.2º noma (100)±0.05º
I-surface off orientation iyatholakala ngesicelo.
Ukuma kweflethi OF : (011)±1º noma (011)±0.1º IF : (011)±2º
I-cleaved OF iyatholakala uma uyicela.
2. Ukumaka nge-laser okusekelwe ku-SEMI ejwayelekile kuyatholakala.
3. Iphakheji ngayinye, kanye nephakheji yegesi ye-N2 iyatholakala.
4. I-Etch-and-pack ku-N2 gas iyatholakala.
5. Amawafa angama-Rectangular ayatholakala.
Ukucaciswa okungaphezulu kungokwezinga le-JX'.
Uma eminye imininingwane idingeka, sicela usibuze.

Ukuqondisa

 

I-InP ne-CdTe Substrate (4)(1)
Semicera Indawo yokusebenza
Indawo yokusebenza ye-Semicera 2
Umshini wezinsimbi
Ukucutshungulwa kwe-CNN, ukuhlanza amakhemikhali, i-CVD coating
I-Semicera Ware House
Inkonzo yethu

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