I-Semicera's LiNbO3 Bonding Wafer yakhelwe ukuhlangabezana nezidingo eziphezulu zokwenziwa kwe-semiconductor ethuthukisiwe. Ngezakhiwo zayo ezihlukile, ezihlanganisa ukumelana nokugqokwa okuphakeme, ukuzinza okuphezulu kokushisa, nokuhlanzeka okuvelele, lesi silucwecwana silungele ukusetshenziswa ezinhlelweni ezidinga ukunemba nokusebenza okuhlala isikhathi eside.
Embonini ye-semiconductor, i-LiNbO3 Bonding Wafers ivame ukusetshenziselwa ukuhlanganisa izendlalelo ezincane kumadivayisi we-optoelectronic, izinzwa, nama-IC athuthukile. Aziswa kakhulu kuma-photonics kanye ne-MEMS (Micro-Electromechanical Systems) ngenxa yezakhiwo zawo ezinhle kakhulu ze-dielectric kanye nekhono lokumelana nezimo zokusebenza ezinzima. I-LiNbO3 Bonding Wafer ye-Semicera yakhelwe ukusekela ukubopha okunembe kwesendlalelo, kuthuthukise ukusebenza okuphelele nokuthembeka kwamadivayisi asemiconductor.
Izakhiwo ezishisayo nezikagesi ze-LiNbO3 | |
Iphoyinti lokuncibilika | 1250 ℃ |
Izinga lokushisa le-Curie | 1140 ℃ |
I-Thermal conductivity | 38 W/m/K @ 25 ℃ |
I-coefficient yokunwetshwa kwe-thermal (@ 25°C) | //a, 2.0×10-6/K //c, 2.2×10-6/K |
Ukungazweli | 2×10-6Ω·cm @ 200 ℃ |
I-Dielectric njalo | εS11/ε0=43, εT11/ε0=78 εS33/ε0=28, εT33/ε0= 2 |
I-Piezoelectric njalo | D22=2.04×10-11C/N D33=19.22×10-11C/N |
I-Electro-optic coefficient | γT33=32 pm/V, γS33=31pm/V, γT31=10 pm/V, γS31=8.6 pm/V, γT22=6.8 pm/V, γS22=3.4 pm/V, |
I-half-wave voltage, DC | 3.03 KV 4.02 KV |
Yakhelwe kusetshenziswa izinto zekhwalithi ephezulu, i-LiNbO3 Bonding Wafer iqinisekisa ukwethembeka okungaguquki ngisho nangaphansi kwezimo ezimbi kakhulu. Ukuzinza kwayo okuphezulu kokushisa kuyenza ifaneleke ikakhulukazi izindawo ezibandakanya amazinga okushisa aphakeme, njengalawo atholakala kuzinqubo ze-semiconductor epitaxy. Ukwengeza, ukuhlanzeka okuphezulu kwe-wafer kuqinisekisa ukungcoliswa okuncane, okuyenza ibe ukukhetha okuthembekile kwezinhlelo zokusebenza ezibucayi ze-semiconductor.
Kwa-Semicera, sizibophezele ekunikezeni izixazululo ezihamba phambili embonini. I-LiNbO3 Bonding Wafer yethu iletha ukuqina okungenakuqhathaniswa namandla okusebenza okuphezulu kwezinhlelo zokusebenza ezidinga ukuhlanzeka okuphezulu, ukumelana nokugqoka, nokuzinza kwe-thermal. Kungakhathaliseki ukuthi okokukhiqiza okuthuthukisiwe kwe-semiconductor noma obunye ubuchwepheshe obukhethekile, le wafer isebenza njengengxenye ebalulekile yokukhiqiza idivayisi esezingeni eliphezulu.