I-LiNbO3 i-Bonding wafer

Incazelo emfushane:

Ikristalu ye-lithium niobate inezimfanelo ezinhle kakhulu ze-electro-optical, acousto-optical, piezoelectric, kanye ne-nonlinear. I-lithium niobate crystal iyikristalu ebalulekile yemisebenzi eminingi enezakhiwo ezinhle ezingezona umugqa kanye ne-coefficient enkulu ye-optical nonlinear; kungase futhi kuzuze ukufanisa kwesigaba okungabalulekile. Njengekristalu ye-electro-optical, isetshenziswe njengento ebalulekile ye-waveguide optical; njengekristalu ye-piezoelectric, ingasetshenziswa ukwenza izihlungi ze-SAW eziphakathi nendawo neziphansi, ama-transducers we-ultrasonic anamandla aphezulu aphezulu, njll. Izinto ezisetshenziswayo ze-lithium niobate nazo zisetshenziswa kabanzi.

Thumela i-imeyili kithi

Imininingwane Yomkhiqizo

Omaka bomkhiqizo

I-Semicera's LiNbO3 Bonding Wafer yakhelwe ukuhlangabezana nezidingo eziphezulu zokwenziwa kwe-semiconductor ethuthukisiwe. Ngezakhiwo zayo ezihlukile, ezihlanganisa ukumelana nokugqokwa okuphakeme, ukuzinza okuphezulu kokushisa, nokuhlanzeka okuvelele, lesi silucwecwana silungele ukusetshenziswa ezinhlelweni ezidinga ukunemba nokusebenza okuhlala isikhathi eside.

Embonini ye-semiconductor, i-LiNbO3 Bonding Wafers ivame ukusetshenziselwa ukuhlanganisa izendlalelo ezincane kumadivayisi we-optoelectronic, izinzwa, nama-IC athuthukile. Aziswa kakhulu kuma-photonics kanye ne-MEMS (Micro-Electromechanical Systems) ngenxa yezakhiwo zawo ezinhle kakhulu ze-dielectric kanye nekhono lokumelana nezimo zokusebenza ezinzima. I-LiNbO3 Bonding Wafer ye-Semicera yakhelwe ukusekela ukubopha okunembe kwesendlalelo, kuthuthukise ukusebenza okuphelele nokuthembeka kwamadivayisi asemiconductor.

Izakhiwo ezishisayo nezikagesi ze-LiNbO3
Iphoyinti lokuncibilika	1250 ℃
Izinga lokushisa le-Curie	1140 ℃
I-Thermal conductivity	38 W/m/K @ 25 ℃
I-coefficient yokunwetshwa kwe-thermal (@ 25°C)	//a, 2.0×10^-6/K //c, 2.2×10^-6/K
Ukungazweli	2×10^-6Ω·cm @ 200 ℃
I-Dielectric njalo	εS11/ε0=43, εT11/ε0=78 εS33/ε0=28, εT33/ε0= 2
I-Piezoelectric njalo	D₂₂=2.04×10^-11C/N D₃₃=19.22×10^-11C/N
I-Electro-optic coefficient	γT₃₃=32 pm/V, γS₃₃=31pm/V, γT₃₁=10 pm/V, γS₃₁=8.6 pm/V, γT₂₂=6.8 pm/V, γS₂₂=3.4 pm/V,
I-half-wave voltage, DC Inkambu kagesi // z, ukukhanya ⊥ Z; Inkambu kagesi // x noma y, ukukhanya ⊥ z	3.03 KV 4.02 KV

Yakhelwe kusetshenziswa izinto zekhwalithi ephezulu, i-LiNbO3 Bonding Wafer iqinisekisa ukwethembeka okungaguquki ngisho nangaphansi kwezimo ezimbi kakhulu. Ukuzinza kwayo okuphezulu kokushisa kuyenza ifaneleke ikakhulukazi izindawo ezibandakanya amazinga okushisa aphakeme, njengalawo atholakala kuzinqubo ze-semiconductor epitaxy. Ukwengeza, ukuhlanzeka okuphezulu kwe-wafer kuqinisekisa ukungcoliswa okuncane, okuyenza ibe ukukhetha okuthembekile kwezinhlelo zokusebenza ezibucayi ze-semiconductor.

Kwa-Semicera, sizibophezele ekunikezeni izixazululo ezihamba phambili embonini. I-LiNbO3 Bonding Wafer yethu iletha ukuqina okungenakuqhathaniswa namandla okusebenza okuphezulu kwezinhlelo zokusebenza ezidinga ukuhlanzeka okuphezulu, ukumelana nokugqoka, nokuzinza kwe-thermal. Kungakhathaliseki ukuthi okokukhiqiza okuthuthukisiwe kwe-semiconductor noma obunye ubuchwepheshe obukhethekile, le wafer isebenza njengengxenye ebalulekile yokukhiqiza idivayisi esezingeni eliphezulu.