Impilo Emide Yesevisi I-SiC Coated Graphite Carrier Ye-Solar Wafer

Isevisi ende ye-SiC Coated Graphite Carrier Ye-Solar Wafer Isithombe Esifakiwe

Incazelo emfushane:

I-Silicon carbide iwuhlobo olusha lwe-ceramics olusebenza ngezindleko eziphakeme kanye nezakhiwo ezinhle kakhulu zezinto ezibonakalayo. Ngenxa yezici ezinjengamandla aphezulu nobulukhuni, ukumelana nokushisa okuphezulu, ukuguquguquka okukhulu kokushisa kanye nokumelana nokubola kwamakhemikhali, i-Silicon Carbide icishe imelane nayo yonke into yamakhemikhali. Ngakho-ke, i-SiC isetshenziswa kabanzi ezimayini zikawoyela, amakhemikhali, imishini kanye ne-airspace, ngisho namandla enuzi kanye nezempi zinezidingo zabo ezikhethekile ku-SIC. Olunye uhlelo olujwayelekile esingalunikeza izindandatho zophawu lwepompo, i-valve nezikhali zokuvikela njll.

Thumela i-imeyili kithi

Imininingwane Yomkhiqizo

Omaka bomkhiqizo

Izinzuzo

Ukumelana nokushisa okuphezulu kwe-oxidation
Ukumelana ne-Corrosion okuhle kakhulu
Ukumelana okuhle kwe-Abrasion
I-coefficient ephezulu ye-conductivity yokushisa
Ukuzithambisa, ukuminyana okuphansi
Ukuqina okuphezulu
Umklamo ngokwezifiso.

Izinhlelo zokusebenza

-Inkundla engagqoki: ukubhodloza, ipuleti, umlomo wombhobho wesandblasting, umugqa wesishingishane, umgqomo wokugaya, njll.
-Inkundla Yokushisa Ephakeme: I-siC Slab, Ishubhu Lokucisha Isithando, Ishubhu elikhazimulayo, i-crucible, i-Heating Element, i-roller, i-Beam, i-Heat Exchanger, i-Cold Air Pipe, i-Burner Nozzle, i-Thermocouple Protection Tube, isikebhe se-SiC, i-Kiln car Structure, i-Setter, njll.
-I-Silicon Carbide Semiconductor: Isikebhe se-SiC wafer, i-sic chuck, i-sic paddle, i-sic cassette, i-sic diffusion tube, i-wafer fork, ipuleti lokumunca, umgwaqo, njll.
-I-Silicon Carbide Seal Field: zonke izinhlobo zendandatho yokubeka uphawu, ukuthwala, i-bushing, njll.
-Inkambu ye-Photovoltaic: I-Cantilever Paddle, i-Grinding Barrel, i-Silicon Carbide Roller, njll.
-I-Lithium Battery Field

I-WAFER (1)

I-WAFER (2)

Izakhiwo Zomzimba ze-SiC

Impahla	Inani	Indlela
Ukuminyana	3.21 g/cc	Sink-float kanye nobukhulu
Ukushisa okuqondile	0.66 J/g °K	I-Pulsed laser flash
Amandla e-Flexural	450 MPa560 MPa	4 iphuzu ukugoba, RT4 iphuzu ukugoba, 1300°
Ukuqina kokuphuka	2.94 MPa m1/2	I-Microindentation
Ukuqina	2800	Vicker, 500g umthwalo
I-Elastic ModulusYoung's Modulus	450 GPA430 GPA	4 pt ukugoba, RT4 pt ukugoba, 1300 °C
Usayizi wokusanhlamvu	2 - 10 µm	I-SEM

Izakhiwo ezishisayo ze-SiC

I-Thermal Conductivity	250 W/m °K	Indlela ye-Laser flash, RT
I-Thermal Expansion (CTE)	4.5 x 10-6 °K	Izinga lokushisa legumbi liye ku-950 °C, i-silica dilatometer

Imingcele Yezobuchwepheshe

Into	Iyunithi	Idatha
Into	Iyunithi	I-RBSiC(SiSiC)	I-NBSiC	I-SSiC	I-RSiC	I-OSIC
Okuqukethwe kwe-SiC	%	85	75	99	99.9	≥99
Okuqukethwe kwe-silicon yamahhala	%	15	0	0	0	0
Izinga lokushisa eliphezulu lesevisi	℃	1380	1450	1650	1620	1400
Ukuminyana	g/cm³	3.02	2.75-2.85	3.08-3.16	2.65-2.75	2.75-2.85
I-porosity evulekile	%	0	13-15	0	15-18	7-8
Amandla okugoba 20 ℃	Mpa	250	160	380	100	/
Amandla okugoba 1200 ℃	Mpa	280	180	400	120	/
I-modulus ye-elasticity 20 ℃	I-Gpa	330	580	420	240	/
I-modulus ye-elasticity 1200 ℃	I-Gpa	300	/	/	200	/
Thermal conductivity 1200 ℃	W/mK	45	19.6	100-120	36.6	/
I-coefficient yokwanda kwe-thermal	K^-1X10^-6	4.5	4.7	4.1	4.69	/
HV	Kg/m^m2	2115	/	2800	/	/

I-CVD silicon carbide coating endaweni engaphandle yemikhiqizo ye-ceramic ye-silicon carbide ceramic ingafinyelela ubumsulwa obungaphezu kuka-99.9999% ukuze kuhlangatshezwane nezidingo zamakhasimende embonini ye-semiconductor.