Incazelo
I-MOCVD Susceptor for Epitaxial Growth by semicera, isixazululo esiholayo esiklanyelwe ukuthuthukisa inqubo yokukhula kwe-epitaxial yezinhlelo zokusebenza ezithuthukisiwe ze-semiconductor. I-MOCVD Susceptor ye-Semicera iqinisekisa ukulawula okunembile kwezinga lokushisa nokufakwa kwezinto ezibonakalayo, okuyenza ibe inketho ekahle yokuzuza i-Si Epitaxy yekhwalithi ephezulu ne-SiC Epitaxy. Ukwakhiwa kwayo okuqinile kanye ne-thermal conductivity ephezulu kunika amandla ukusebenza okungaguquki ezindaweni ezidingayo, okuqinisekisa ukwethembeka okudingekayo kumasistimu okukhula kwe-epitaxial.
Le Susceptor ye-MOCVD iyahambisana nezinhlelo zokusebenza ezihlukahlukene ze-epitaxial, okuhlanganisa ukukhiqizwa kwe-Monocrystalline Silicon kanye nokukhula kwe-GaN ku-SiC Epitaxy, okuyenza ibe yingxenye ebalulekile kubakhiqizi abafuna imiphumela yezinga eliphezulu. Ukwengeza, isebenza ngaphandle komthungo nge-PSS Etching Carrier, i-ICP Etching Carrier, nezinhlelo ze-RTP Carrier, ithuthukisa ukusebenza kahle kwenqubo kanye nesivuno. I-susceptor ibuye ifanele izinhlelo zokusebenza ze-LED Epitaxial Susceptor nezinye izinqubo zokukhiqiza ezithuthukisiwe ze-semiconductor.
Ngomklamo wayo oguquguqukayo, i-MOCVD susceptor ye-semicera ingashintshwa ukuze isetshenziswe kuma-Pancake Susceptors kanye nama-Barrel Susceptors, enikeza ukuguquguquka ekusetheni okuhlukene kokukhiqiza. Ukuhlanganiswa kwezingxenye ze-Photovoltaic kwandisa kakhulu ukusetshenziswa kwayo, okwenza kube kuhle kuzo zombili izimboni ze-semiconductor kanye ne-solar. Lesi sixazululo sokusebenza okuphezulu siletha ukuzinza okuhle kakhulu kokushisa nokuqina, ukuqinisekisa ukusebenza kahle kwesikhathi eside ezinqubweni zokukhula kwe-epitaxial.
Izici Eziyinhloko
1 .Ukuhlanzeka okuphezulu kwe-SiC ehlanganiswe ne-graphite
2. Ukumelana nokushisa okuphezulu & ukufana okushisayo
3. Ikristalu ye-SiC ecwebezelayo efakwe endaweni ebushelelezi
4. Ukuqina okuphezulu ngokumelene nokuhlanza amakhemikhali
Ukucaciswa Okuyinhloko Kwezingubo Ze-CVD-SIC:
| I-SiC-CVD | ||
| Ukuminyana | (g/cc) | 3.21 |
| Amandla e-Flexural | (Mpa) | 470 |
| Ukunwetshwa kwe-thermal | (10-6/K) | 4 |
| I-Thermal conductivity | (W/mK) | 300 |
Ukupakisha Nokuthumela
Ikhono Lokuhlinzeka:
10000 Ucezu/Izingcezu Ngenyanga
Ukupakishwa Nokulethwa:
Ukupakisha:Ukupakisha Okujwayelekile & Okuqinile
Isikhwama sePoly + Ibhokisi + Ibhokisi + Iphalethi
Imbobo:
Ningbo/Shenzhen/Shanghai
Isikhathi esiholayo:
| Ubuningi(Izingcezu) | 1 - 1000 | > 1000 |
| Est. Isikhathi(izinsuku) | 30 | Kuzoxoxiswana |
