Isizinda socwaningo
Ukubaluleka kokusetshenziswa kwe-silicon carbide (SiC): Njengempahla ye-semiconductor ye-bandgap ebanzi, i-silicon carbide idonse ukunakwa okukhulu ngenxa yezakhiwo zayo zikagesi ezinhle kakhulu (njenge-bandgap enkulu, isivinini sokugcwala kwama-electron aphezulu kanye nokuqhutshwa kokushisa). Lezi zakhiwo ziyenza isetshenziswe kabanzi ekukhiqizeni imvamisa ephezulu, izinga lokushisa eliphezulu kanye namandla aphezulu, ikakhulukazi emkhakheni wezinto zikagesi zamandla.
Umthelela wokukhubazeka kwekristalu: Naphezu kwalezi zinzuzo ze-SiC, ukukhubazeka kumakristalu kuseyinkinga enkulu evimbela ukuthuthukiswa kwamadivayisi asebenza kahle kakhulu. Lokhu kungasebenzi kungabangela ukonakala kokusebenza kwedivayisi futhi kuthinte ukwethembeka kwedivayisi.
Ubuchwepheshe be-X-ray topological imaging: Ukuze kuthuthukiswe ukukhula kwekristalu futhi uqonde umthelela wokukhubazeka ekusebenzeni kwedivayisi, kuyadingeka ukuveza nokuhlaziya ukulungiselelwa kokungasebenzi kumakristalu e-SiC. I-X-ray ye-topological imaging (ikakhulukazi kusetshenziswa imishayo yemisebe ye-synchrotron) isiphenduke indlela ebalulekile yokubonisa abalingiswa engaveza izithombe zokucaca okuphezulu kwesakhiwo sangaphakathi sekristalu.
Ucwaningo imibono
Ngokusekelwe kubuchwepheshe bokulingisa bokulandelela imisebe: I-athikili iphakamisa ukusetshenziswa kobuchwepheshe bokulingisa bokulandelela i-ray ngokusekelwe kumshini wokuqhathanisa wokumayo ukuze kulingise umehluko wesici obonwa ezithombeni zangempela ze-X-ray ze-topological. Le ndlela iye yafakazelwa ukuthi iyindlela ephumelelayo yokufunda izakhiwo zokukhubazeka kwekristalu kuma-semiconductors ahlukahlukene.
Ukuthuthukiswa kobuchwepheshe bokulingisa: Ukuze kulingise kangcono ukugudluka okuhlukile okubonwe kumakristalu e-4H-SiC kanye ne-6H-SiC, abacwaningi bathuthukise ubuchwepheshe bokulingisa ukulandelwa kwe-ray futhi bahlanganisa imiphumela yokuphumula kwendawo kanye nokumuncwa kukagesi wesithombe.
Okuqukethwe kocwaningo
Ukuhlaziywa kohlobo lokususwa: I-athikili ibuyekeza ngokuhlelekile ukucaciswa kwezinhlobo ezihlukene zokugudluzwa (okufana nokugudluzwa kwezikulufu, ukugudluzwa konqenqema, ukugudluka okuxubile, ukuhlukaniswa kwendiza eyisisekelo kanye nokususwa kohlobo lwe-Frank) kuma-polytypes ahlukene e-SiC (okuhlanganisa 4H no-6H) kusetshenziswa ukulandelela kwe-ray. ubuchwepheshe bokulingisa.
Ukusetshenziswa kobuchwepheshe bokulingisa: Ukusetshenziswa kobuchwepheshe bokulingisa i-ray tracing ngaphansi kwezimo ezihlukene zemishayo efana ne-beam topology ebuthakathaka kanye ne-plane wave topology, kanye nendlela yokunquma ukujula kokungena okusebenzayo kokugudluzwa ngobuchwepheshe bokulingisa kuyacwaningwa.
Inhlanganisela yokuhlolwa nokulingisa: Ngokuqhathanisa izithombe ze-X-ray ze-topological ezitholwe ngokuhlolwa nezithombe ezifanisiwe, ukunemba kobuchwepheshe bokulingisa ekunqumeni uhlobo lokugudluza, i-Burgers vector kanye nokusatshalaliswa kwendawo kokuhlukaniswa kwekristalu kuyaqinisekiswa.
Iziphetho zocwaningo
Ukusebenza kobuchwepheshe bokulingisa: Ucwaningo lubonisa ukuthi ubuchwepheshe bokulingisa bokulandelela i-ray buyindlela elula, engonakali futhi engacacile yokuveza izici zezinhlobo ezahlukene zokuhlukaniswa ku-SiC futhi ingalinganisela ngempumelelo ukujula kokungena okusebenzayo kokugudluzwa.
Ukuhlaziywa kokulungiswa kokususwa kwe-3D: Ngobuchwepheshe bokulingisa, ukuhlaziywa kokumiswa kokuhlukaniswa kwe-3D kanye nesilinganiso sokuminyana kungenziwa, okubalulekile ekuqondeni ukuziphatha nokuvela kokugudluka ngesikhathi sokukhula kwekristalu.
Izinhlelo zokusebenza zesikhathi esizayo: Ubuchwepheshe bokulingisa i-ray tracing kulindeleke ukuthi buphinde busetshenziswe ku-topology yamandla aphezulu kanye ne-X-ray topology esekwe elabhorethri. Ngaphezu kwalokho, lobu buchwepheshe bunganwetshwa nasekufanisweni kwezici zesici zamanye ama-polytypes (njenge-15R-SiC) noma ezinye izinto ze-semiconductor.
Ukubuka konke kwesithombe
Umdwebo 1: Umdwebo we-Schematic we-synchrotron radiation radiation setup X-ray topological imaging, ohlanganisa i-geometry yokudlulisela (Laue), i-reverse reflection (Bragg) geometry, kanye nejometri yezigameko zamadlelo. Lezi geometries zisetshenziswa kakhulu ukurekhoda izithombe ze-X-ray topological.
Umdwebo 2: Umdwebo weschematic we-X-ray diffraction yendawo ehlanekezelwe eduze nokugudlulwa kwesikulufu. Lesi sibalo sichaza ubudlelwano phakathi kwe-beam yesigameko (s0) ne-diffracted beam (sg) nendiza yendawo ye-diffraction evamile (n) kanye ne-engeli ye-Bragg yendawo (θB).
Umfanekiso 3: Izithombe ze-X-ray ezibonisa emuva emuva zamapayipi amancane (MPs) ku-wafer ye-6H–SiC kanye nokuhluka kokuhlukaniswa kwesikulufu esilingisiwe (b = 6c) ngaphansi kwezimo ezifanayo zokuphazamiseka.
Umdwebo 4: I-Micropipe ebhangqwa kusithombe se-topography esibonisa emuva se-wafer engu-6H–SiC. Izithombe zamaLungu ePhalamende afanayo anezikhala ezihlukene kanye namaLungu ePhalamende ezinhlangothini eziphambene ziboniswa ngokulingiswa kokulandela ngomsebe.
Fig. 5: Isigameko sokudla kwedlelo Izithombe ze-X-ray ze-closed screw dislocations (TSDs) ku-wafer ye-4H–SiC ziyaboniswa. Izithombe zibonisa ukugqama konqenqema okuthuthukisiwe.
Umfanekiso wesi-6: Ukulingisa imisebe yesigameko sokudla izithombe ze-X-ray ze-TSD yesandla sobunxele nangakwesokudla ku-wafer ye-4H–SiC iyaboniswa.
Umfanekiso wesi-7: Ukulingiswa kwe-ray tracing kwama-TSD ku-4H–SiC naku-6H–SiC kuyaboniswa, kubonisa ukugudluzwa ngamavektha e-Burgers ahlukene nama-polytypes.
Umfanekiso wesi-8: Ibonisa isigameko sokudla kwezithombe ze-X-ray ze-topological zezinhlobo ezahlukene ze-threading edge dislocations (TEDs) kuma-wafers we-4H-SiC, kanye nezithombe ze-TED topological ezifanisiwe kusetshenziswa indlela yokulandela imisebe.
Umdwebo 9: Ibonisa izithombe ze-X-ray ezibonisa emuva emuva zezinhlobo ezahlukene ze-TED kumawafa we-4H-SiC, kanye nokufaniswa kwe-TED okulingisiwe.
I-Fig. 10: Ibonisa imisebe yokulandela ngomkhondo izithombe zokuhlukaniswa kwentambo exubile (TMDs) enamavekhtha athile e-Burgers, kanye nezithombe ze-topological zokuhlola.
Umdwebo 11: Ubonisa izithombe ze-topological ezibonisa emuva emuva zokugudluzwa kwendiza eyisisekelo (BPDs) kumawafa we-4H-SiC, kanye nomdwebo wepulani wokwakheka kokuhluka konqenqema okulingiswayo.
Umfanekiso 12: Ibonisa imisebe yokulingisa izithombe ze-BPD yesandla sokudla ye-helical ekujuleni okuhlukile kucatshangelwa ukukhululeka kwendawo kanye nemiphumela yokumuncwa kukagesi wesithombe.
Umdwebo 13: Ubonisa imisebe yokulingisa izithombe ze-BPD yesandla sokudla ye-helical ekujuleni okuhlukahlukene, kanye nesigameko sokudla kwezithombe ze-X-ray ze-topological.
Umdwebo 14: Ubonisa umdwebo wohlelo lokugudluzwa kwendiza eyisisekelo kunoma iyiphi indlela kumawafa we-4H-SiC, kanye nendlela yokunquma ukujula kokungena ngokulinganisa ubude bokuqagela.
Umdwebo 15: Ukungafani kwama-BPD anama-Burgers vectors ahlukene kanye nezikhombisi-ndlela endaweni yedlelo izithombe ze-X-ray topological, kanye nemiphumela yokulingisa imisebe ehambisanayo.
Umfanekiso 16: Isithombe sokulingisa i-ray se-TSD echezukile esandleni sokudla ku-wafer ye-4H-SiC, kanye nesigameko sokudla kwe-X-ray isithombe se-topological siyaboniswa.
Umdwebo 17: Ukulingisa kokulandela umsebe nesithombe sokuhlola se-TSD echezukile ku-8° offset 4H-SiC wafer kuyaboniswa.
Umfanekiso 18: I-ray ilandelela izithombe ezilingisayo ze-TSD nama-TMD achezukile anamavektha ahlukene e-Burgers kodwa umugqa ofanayo uyaboniswa.
Umfanekiso 19: Isithombe sokulingisa sokulandelela i-ray sokugudluka kohlobo luka-Frank, kanye nesigameko sokudla esihambisanayo nesithombe se-X-ray se-topological siyaboniswa.
Umfanekiso 20: Isithombe se-X-ray se-X-ray esimhlophe esidlulisiwe se-micropipe ku-wafer ye-6H-SiC, kanye nesithombe sokulingisa ukulandelwa kwe-ray siyaboniswa.
Umfanekiso 21: Isithombe se-monochromatic X-ray topological se-axially cut yesampula ye-6H-SiC, kanye nesithombe sokulingisa sokulandela umsebe se-BPD siyaboniswa.
Umdwebo 22: ubonisa imisebe yokulingisa izithombe zama-BPD ku-6H-SiC amasampula asikwe nge-axially kuma-engeli esigameko ahlukene.
Umfanekiso 23: ubonisa imisebe yokulingisa izithombe ze-TED, TSD kanye ne-TMD ku-6H-SiC amasampula asikwe nge-axially ngaphansi kwejometri yesigameko sokudla.
Umfanekiso 24: ubonisa izithombe ze-X-ray ze-topological ze-TSD eziphambukile ezinhlangothini ezihlukene zomugqa we-isoclinic ku-wafer ye-4H-SiC, kanye nezithombe zokulingiswa kwe-ray ezihambisanayo.
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Isikhathi sokuthumela: Jun-18-2024