Izakhiwo ze-Ceramic semiconductor

Izici:

I-resistivity ye-ceramics enezakhiwo ze-semiconductor imayelana ne-10-5~ 107ω.cm, futhi izakhiwo ze-semiconductor zezinto zobumba zingatholwa nge-doping noma ukubangela ukukhubazeka kwe-lattice okubangelwa ukuchezuka kwe-stoichiometric. I-Ceramics esebenzisa le ndlela ihlanganisa i-TiO2,

I-ZnO, CdS, BaTiO3, Fe2O3, Cr2O3 kanye ne-SiC. Izici ezahlukene zei-semiconductor ceramicsukuthi ukuguquguquka kwawo kukagesi kuyashintsha nemvelo, engasetshenziswa ukwenza izinhlobo ezahlukene zemishini ebucayi yobumba.

Okufana nokuzwela ukushisa, ukuzwela kwegesi, ukuzwela umswakama, ukuzwela ukucindezela, ukuzwela ukukhanya nezinye izinzwa. Izinto ze-Semiconductor spinel, ezifana ne-Fe3O4, zixubene nezinto ezingezona eze-conductor spinel, njenge-MgAl2O4, kuzixazululo eziqinile ezilawulwayo.

I-MgCr2O4, ne-Zr2TiO4, ingasetshenziswa njengama-thermistors, okungamathuluzi okumelana alawulwa ngokucophelela ahluka ngokwezinga lokushisa. I-ZnO ingashintshwa ngokungeza ama-oxide afana ne-Bi, Mn, Co kanye ne-Cr.

Iningi lalawa ma-oxides awancibiliki ngokuqinile ku-ZnO, kodwa achezuka emngceleni wokusanhlamvu ukuze kwakheke isendlalelo esivimbelayo, ukuze kutholwe izinto ze-ceramic ze-varistor ze-ZnO, futhi iwuhlobo lwezinto ezisebenza kahle kakhulu kuma-varistor ceramics.

I-SiC doping (njenge-carbon black yomuntu, i-graphite powder) ingalungiselelaizinto ze-semiconductorngokuzinza kwezinga lokushisa eliphezulu, elisetshenziswa njengezinto ezihlukahlukene zokushisa eziphikisanayo, okungukuthi, izinduku ze-silicon carbon kumaziko okushisa aphezulu kagesi. Lawula ukumelana nesigaba se-SiC ukuze uzuze cishe noma yini oyifunayo

Izimo zokusebenza (kufika ku-1500 ° C), ukwandisa ukumelana kwayo nokunciphisa ingxenye yesiphambano sesici sokushisa kuzokwandisa ukushisa okukhiqizwa. I-silicon carbon rod emoyeni izokwenzeka ukusabela kwe-oxidation, ukusetshenziswa kwezinga lokushisa ngokuvamile kukhawulelwe ku-1600 ° C ngezansi, uhlobo olujwayelekile lwe-silicon carbon rod.

Izinga lokushisa eliphephile lokusebenza ngu-1350°C. Ku-SiC, i-athomu ye-Si ithathelwa indawo i-athomu engu-N, ngenxa yokuthi i-N inama-electron amaningi, kukhona ama-electron amaningi, futhi izinga layo lamandla liseduze nebhendi yokuqhuba ephansi futhi kulula ukukhushulwa ebhendi yokuqhuba, ngakho lesi simo samandla ibizwa nangokuthi izinga lokunikela, le ngxenye

Amakhondaktha angama-semiconductors ohlobo lwe-N noma ama-semiconductors aqhuba ngogesi. Uma i-athomu ye-Al isetshenziswa ku-SiC ukufaka esikhundleni se-athomu ye-Si, ngenxa yokuntuleka kwe-electron, isimo samandla esakhiwe siseduze ne-valence electron band ngenhla, kulula ukwamukela ama-electron, ngakho-ke kubizwa ngokuthi owamukelayo.

Ileveli yamandla eyinhloko, eshiya isikhundla esingenamuntu ebhendini ye-valence engase iqhube ama-electron ngenxa yokuthi isikhundla esingenamuntu sisebenza ngokufana nesithwali sokushaja esihle, sibizwa ngokuthi i-semiconductor yohlobo lwe-P noma i-semiconductor yembobo (H. Sarman,1989).