Iyini i-CVD SiC
I-Chemical vapor deposition (CVD) inqubo yokufaka i-vacuum esetshenziselwa ukukhiqiza izinto eziqinile ezihlanzekile. Le nqubo ivame ukusetshenziswa emkhakheni wokukhiqiza i-semiconductor ukwenza amafilimu amancanyana phezu kwama-wafers. Enqubweni yokulungiselela i-SiC nge-CVD, i-substrate ivezwa ku-precursors eyodwa noma ngaphezulu eguquguqukayo, esabela ngamakhemikhali ebusweni be-substrate ukuze ifake idiphozi ye-SiC oyifunayo. Phakathi kwezindlela eziningi zokulungiselela izinto ze-SiC, imikhiqizo elungiselelwe ukufakwa komhwamuko wamakhemikhali inokufana okuphezulu nokuhlanzeka, futhi indlela inokulawulwa okuqinile kwenqubo.
Izinto ze-CVD SiC zifaneleka kakhulu ukusetshenziswa embonini ye-semiconductor edinga izinto ezisebenza kahle kakhulu ngenxa yenhlanganisela yazo eyingqayizivele yezinto ezinhle kakhulu ezishisayo, zikagesi kanye namakhemikhali. Izingxenye ze-CVD SiC zisetshenziswa kakhulu kumishini yokufaka, imishini ye-MOCVD, imishini ye-Si epitaxial kanye nemishini ye-SiC epitaxial, imishini yokucubungula ukushisa okushisayo kanye neminye imikhakha.
Sekukonke, ingxenye enkulu yemakethe yezingxenye ze-CVD SiC ifaka izingxenye zemishini. Ngenxa ye-reactivity ephansi kanye ne-conductivity kumagesi e-chlorine- kanye ne-fluorine-etching, i-CVD silicon carbide iyinto efanelekile yezingxenye ezifana nezindandatho zokugxila kumishini yokufaka i-plasma.
Izingxenye ze-CVD silicon carbide kumishini yokuqopha zihlanganisa izindandatho zokugxilisa ingqondo, amakhanda eshawa yegesi, amathreyi, amasongo onqenqema, njll. Uma sithatha indandatho yokugxilisa ingqondo njengesibonelo, indandatho yokugxilisa ingqondo iyingxenye ebalulekile ebekwe ngaphandle kwewafa futhi ithintane ngqo newafa. Ngokusebenzisa i-voltage kwendandatho ukuze kugxilwe ku-plasma edlula iringi, i-plasma igxile ku-wafer ukuze kuthuthukiswe ukufana kokucubungula.
Izindandatho zokugxila zendabuko zenziwe nge-silicon noma i-quartz. Ngokuthuthuka kwe-miniaturization yesekethe edidiyelwe, isidingo nokubaluleka kwezinqubo zokuhlanganisa ekwenziweni kwesekethe ehlanganisiwe kuyakhula, futhi amandla namandla e-etching plasma ayaqhubeka nokukhula. Ikakhulukazi, amandla e-plasma adingekayo ku-capacitively coupled (CCP) etching plasma etching angaphezulu, ngakho-ke izinga lokusetshenziswa kwezindandatho zokugxila ezenziwe ngezinto ze-silicon carbide liyakhula. Umdwebo wohlelo lwe-CVD silicon carbide focus ring uboniswe ngezansi:
Isikhathi sokuthumela: Jun-20-2024