Okokuqala, faka i-polycrystalline silicon nama-dopants ku-quartz crucible esithandweni esisodwa sekristalu, ukhuphule izinga lokushisa libe ngaphezu kwamadigri angu-1000, futhi uthole i-polycrystalline silicon esimweni esincibilikisiwe.
Ukukhula kwe-Silicon ingot kuyinqubo yokwenza i-silicon ye-polycrystalline ibe yi-silicon eyodwa yekristalu. Ngemuva kokuthi i-silicon ye-polycrystalline ishiselwe ibe uketshezi, indawo eshisayo ilawulwa ngokunembile ukuze ikhule ibe amakristalu ekhwalithi ephezulu.
Imiqondo ehlobene:
Ukukhula kwekristalu okukodwa:Ngemuva kokuthi izinga lokushisa le-polycrystalline silicon isisombululo lizinzile, ikristalu yembewu yehliswa kancane kancane ku-silicon melt (i-crystal yembewu nayo izoncibilika ku-silicon melt), bese i-crystal imbewu iphakanyiswa ngesivinini esithile sokuhlwanyela. inqubo. Khona-ke, ama-dislocation akhiqizwa ngesikhathi senqubo yokuhlwanyela ayasuswa ngokusebenza kwentamo. Uma intamo incishiswa ibe ubude obanele, ububanzi be-silicon eyodwa yekristalu bunwetshwa kunani eliqondiwe ngokulungisa isivinini sokudonsa nezinga lokushisa, bese kugcinwa ububanzi obulinganayo ukuze bukhule bufinyelele ubude obuqondiwe. Okokugcina, ukuze kuvinjwe ukugudluka ukuthi kuqhubekele emuva, ingot yekristalu eyodwa iyaqedwa ukuze kutholwe i-crystal ingot eyodwa eqediwe, bese ikhishwa ngemva kokuba izinga lokushisa selipholile.
Izindlela zokulungiselela i-silicon eyodwa ye-crystal:Indlela ye-CZ kanye nendlela ye-FZ. Indlela ye-CZ ifushanisiwe njengendlela ye-CZ. Isici sendlela ye-CZ ukuthi ifinyezwa ohlelweni lwe-thermal-cylinder oluqondile, kusetshenziswa ukushisa kwe-graphite ukumelana ukuze kuncibilike i-silicon ye-polycrystalline ku-high-purity quartz crucible, bese ifaka ikristalu yembewu endaweni encibilikayo ukuze ishise, kuyilapho. ukujikeleza ikristalu yembewu, bese uhlehlisa i-crucible. I-crystal yembewu iphakanyiselwa phezulu kancane kancane, futhi ngemva kwezinqubo zokuhlwanyela, ukukhuliswa, ukujikeleza kwehlombe, ukukhula okulinganayo kobubanzi, nomsila, kutholakala i-silicon eyodwa ye-crystal.
Indlela yokuncibilikisa indawo iyindlela yokusebenzisa ama-ingots e-polycrystalline ukuze ancibilike futhi acwebezele amakristalu e-semiconductor ezindaweni ezahlukene. Amandla ashisayo asetshenziselwa ukukhiqiza indawo encibilikayo ekugcineni kwenduku ye-semiconductor, bese kushiselwa ikristalu elilodwa lembewu yekristalu. Izinga lokushisa liyalungiswa ukuze lenze indawo encibilikayo ihambe kancane iye komunye umkhawulo wenduku, futhi kuyo yonke induku, i-crystal eyodwa iyakhuliswa, futhi ukuqondiswa kwekristalu kuyafana nalokho kwekristalu yembewu. Indlela yokuncibilika yendawo ihlukaniswe yaba izinhlobo ezimbili: indlela yokuncibilikisa indawo evundlile kanye nendlela yokuncibilikisa yendawo yokumiswa eqondile. Eyangaphambili isetshenziselwa ikakhulukazi ukuhlanzwa kanye nokukhula kwekristalu eyodwa yezinto ezifana ne-germanium ne-GaAs. Lokhu kokugcina ukusebenzisa ikhoyili enefrikhwensi ephezulu emkhathini noma esithandweni sevacuum ukuze kukhiqizwe indawo encibilikisiwe lapho kuthintana khona ikristalu eyodwa ye-crystal seed kanye ne-polycrystalline silicon rod elenga phezu kwayo, bese uhambisa indawo encibilikisiwe phezulu ukuze ikhule eyodwa. ikristalu.
Cishe u-85% wama-silicon wafers akhiqizwa ngendlela ye-Czochralski, futhi u-15% wama-silicon wafers akhiqizwa indlela yokuncibilika kwendawo. Ngokusho kwesicelo, i-crystal silicon eyodwa ekhule ngendlela ye-Czochralski isetshenziselwa ikakhulukazi ukukhiqiza izingxenye zesekethe ezihlanganisiwe, kuyilapho i-crystal silicon eyodwa ekhuliswe indlela yokuncibilika kwendawo isetshenziselwa ikakhulukazi ama-semiconductors amandla. Indlela ye-Czochralski inenqubo evuthiwe futhi kulula ukukhulisa i-silicon eyodwa yekristalu enobubanzi obukhulu; i-zone melting method ayixhumani nesiqukathi, akulula ukungcoliswa, inokuhlanzeka okuphezulu, futhi ilungele ukukhiqizwa kwamadivaysi kagesi anamandla amakhulu, kodwa kunzima kakhulu ukukhulisa i-silicon eyodwa yekristalu enobubanzi obukhulu, futhi ngokuvamile isetshenziselwa kuphela amayintshi angu-8 noma ngaphansi ngobubanzi. Ividiyo ibonisa indlela ye-Czochralski.
Ngenxa yobunzima bokulawula ububanzi be-crystal silicon rod eyodwa ngesikhathi sokudonsa i-crystal eyodwa, ukuze kutholwe izinduku ze-silicon ezinobubanzi obujwayelekile, obufana namasentimitha angu-6, amayintshi angu-8, amayintshi angu-12, njll. Ngemva kokudonsa eyodwa. i-crystal, ububanzi be-silicon ingot buzogoqwa futhi bugaywe. Ingaphezulu lenduku ye-silicon ngemva kokugingqika ibushelelezi futhi iphutha likasayizi lincane.
Kusetshenziswa ubuchwepheshe obuthuthukisiwe bokusika izintambo, i-crystal ingot eyodwa isikwa ibe ama-silicon wafers anogqinsi olufanele ngokusebenzisa imishini yokusika.
Ngenxa yobukhulu obuncane be-wafer ye-silicon, unqenqema lwe-silicon wafer ngemva kokusikwa lubukhali kakhulu. Inhloso yokugaya unqenqema ukwenza unqenqema olubushelelezi futhi akulula ukuphuka ekukhiqizeni ama-chip esikhathini esizayo.
I-LAPING iwukwengeza i-wafer phakathi kwepuleti lokukhetha elisindayo kanye ne-crystal plate ephansi, futhi usebenzise ingcindezi bese uzungezisa ngokuhubeka ukuze wenze i-wafer flat.
I-Etching iyinqubo yokususa umonakalo ongaphezulu we-wafer, futhi ungqimba lwangaphezulu olonakaliswe ukucubungula ngokomzimba luhlakazwa yisisombululo samakhemikhali.
Ukugaya okunezinhlangothi ezimbili kuyinqubo yokwenza i-wafer ibe isicaba futhi isuse ama-protrusions amancane phezulu.
I-RTP iyinqubo yokushisisa ngokushesha i-wafer emizuzwaneni embalwa, ukuze ukukhubazeka kwangaphakathi kwe-wafer kufane, ukungcola kwensimbi kucindezelwe, kanye nokusebenza okungavamile kwe-semiconductor kuvinjelwe.
Ukupholisha kuyinqubo eqinisekisa ubushelelezi obungaphezulu ngomshini wokunemba ongaphezulu. Ukusetshenziswa kwendwangu ecwebezelayo epholishwayo kanye nendwangu yokupholisha, kuhlanganiswe nezinga lokushisa elifanele, ingcindezi kanye nesivinini sokuzungeza, kungaqeda ungqimba lomonakalo womshini oshiywe inqubo yangaphambilini futhi kutholwe ama-wafer e-silicon anobucwebe obuhle kakhulu.
Inhloso yokuhlanza ukususa izinto eziphilayo, izinhlayiya, izinsimbi, njll. ezisele ebusweni be-wafer ye-silicon ngemva kokupholishwa, ukuze kuqinisekiswe ukuhlanzeka kwendawo ye-silicon wafer kanye nokuhlangabezana nezidingo zekhwalithi zenqubo elandelayo.
Isihloli se-flatness & resistivity sithola iwafa ye-silicon ngemva kokupholishwa nokuhlanza ukuze kuqinisekiswe ukuthi ukujiya, ukucaba, ukucaba kwendawo, ukugoba, i-warpage, ukumelana, njll. kwewafa ye-silicon epholishiwe ihlangabezana nezidingo zekhasimende.
KUBALA OKUPHAKATHI kuyinqubo yokuhlola ngokunembile ingaphezulu le-wafer, futhi ukonakala kwendawo nenani kunqunywa ngokuhlakazeka kwe-laser.
I-EPI GROWING iyinqubo yokukhulisa amafilimu e-silicon eyodwa ekristalu yekhwalithi ephezulu kumawafa e-silicon aphucuziwe ngokufakwa kwamakhemikhali esigaba somhwamuko.
Imiqondo ehlobene:Ukukhula kwe-Epitaxial: kubhekisela ekukhuleni kongqimba lwekristalu olulodwa olunezidingo ezithile kanye nokuma kwekristalu okufanayo njenge-substrate ye-crystal substrate eyodwa (i-substrate), njengekristalu yasekuqaleni enwebeka ngaphandle kwesigaba. Ubuchwepheshe bokukhula kwe-Epitaxial bathuthukiswa ngasekupheleni kwawo-1950 nasekuqaleni kwawo-1960. Ngaleso sikhathi, ukuze kukhiqizwe amadivaysi aphezulu-imvamisa namandla aphezulu, kwakudingeka ukunciphisa ukumelana kochungechunge lwabaqoqi, futhi impahla yayidingeka ukuze imelane nomthamo omkhulu wamandla kanye nomthamo omkhulu wamanje, ngakho-ke kwakudingeka ukukhulisa i-high-high mncane. ukumelana nesendlalelo se-epitaxial ku-substrate engamelani kancane. Ungqimba olusha lwekristalu olulodwa olukhule nge-epitaxially lungahluka ku-substrate ngokohlobo lwe-conductivity, ukumelana, njll., kanye namakristalu anezingqimba eziningi ezinobukhulu obuhlukahlukene kanye nezidingo nawo angakhuliswa, ngaleyo ndlela athuthukise kakhulu ukuguquguquka kokuklama kwedivayisi kanye ukusebenza kwedivayisi.
Ukupakisha ukupakishwa kwemikhiqizo yokugcina efanelekile.
Isikhathi sokuthumela: Nov-05-2024