Ukuhlola Amandla Aphezulu Nokuqina Okuphezulu Kwezikebhe Ze-Silicon Carbide Wafer

Izikebhe ze-Silicon carbide (SiC).idlala indima ebalulekile embonini ye-semiconductor, yenza kube lula ukukhiqizwa kwezisetshenziswa zikagesi ezisezingeni eliphezulu. Lesi sihloko sicubungula izici eziphawulekayo zeIzikebhe ze-SiC, egxile emandleni nobulukhuni babo obungavamile, futhi igqamisa ukubaluleka kwabo ekusekeleni ukukhula kwemboni ye-semiconductor.

UkuqondaIzikebhe zeSilicon Carbide Wafer:
Izikebhe ze-Silicon carbide wafer, ezaziwa nangokuthi izikebhe ze-SiC, ziyizinto ezibalulekile ezisetshenziswa enqubweni yokukhiqiza yama-semiconductors. Lezi zikebhe zisebenza njengabathwali be-silicon wafers ngezigaba ezahlukahlukene zokukhiqizwa kwe-semiconductor, njengokuqoshwa, ukuhlanza, kanye nokusabalalisa. Izikebhe ze-SiC wafer zikhethwa ngaphezu kwezikebhe ze-graphite zendabuko ngenxa yezindawo zazo eziphakeme.

Amandla Angenakuqhathaniswa:
Esinye sezici ezivelele zeIzikebhe ze-SiCamandla abo angavamile. I-Silicon carbide inamandla amakhulu okuguquguquka, okwenza izikebhe zikwazi ukumelana nezimo ezinzima zezinqubo zokukhiqiza ze-semiconductor. Izikebhe ze-SiC zingabekezelela amazinga okushisa aphezulu, izingcindezi zemishini, kanye nezindawo ezonakalisayo ngaphandle kokubeka engcupheni ubuqotho bazo besakhiwo. Lokhu kuqina kuqinisekisa ukuthuthwa okuphephile nokuphathwa kwama-silicon wafers, kunciphisa ubungozi bokuphuka nokungcoliswa ngesikhathi sokukhiqiza.

Ukuqina Okuhlaba umxhwele:
Esinye isici esiphawulekayo seIzikebhe ze-SiCubulukhuni babo obuphakeme. I-Silicon carbide inobulukhuni be-Mohs obungu-9.5, okwenza ibe enye yezinto ezilukhuni kakhulu ezaziwa ngumuntu. Lobu bunzima obuyinqaba bunikeza izikebhe ze-SiC ukumelana nokugqokwa okuhle kakhulu, kuvimbele ukuklwebheka noma ukulimala kwamawafa e-silicon eziwaphethe. Ukuqina kwe-SiC nakho kunomthelela ekuphileni isikhathi eside kwezikebhe, njengoba zingakwazi ukumelana nokusetshenziswa isikhathi eside ngaphandle kwezimpawu ezibalulekile zokuguga, ukuqinisekisa ukusebenza okungaguquki nokwethembeka ezinqubweni zokukhiqiza ze-semiconductor.

Izinzuzo ngaphezu kwezikebhe ze-Graphite:
Uma kuqhathaniswa nezikebhe ze-graphite zendabuko,izikebhe ze-silicon carbide waferukunikeza izinzuzo eziningana. Ngenkathi izikebhe ze-graphite zingenwa kalula yi-oxidation kanye nokuwohloka emazingeni okushisa aphezulu, izikebhe ze-SiC zibonisa ukumelana okuphakeme nokuwohloka kokushisa kanye ne-oxidation. Ngaphezu kwalokho,Izikebhe ze-SiCbabe ne-coefficient ephansi yokwanda okushisayo kunezikebhe ze-graphite, ukunciphisa ingozi yokucindezeleka okushisayo kanye nokuguqulwa ngesikhathi sokushintshashintsha kwezinga lokushisa. Amandla aphezulu kanye nokuqina kwezikebhe ze-SiC nakho kubenza bangakwazi ukuphuka nokuguga, okuholela ekunciphiseni isikhathi sokuphumula kanye nokwanda kokukhiqiza ekukhiqizeni ama-semiconductor.

Isiphetho:
Izikebhe ze-silicon carbide wafer, ngamandla azo ancomekayo nobulukhuni, ziye zavela njengezingxenye ezibalulekile embonini ye-semiconductor. Amandla abo okumelana nezimo ezinzima, okuhambisana nokungagugi kwawo okuphezulu, kuqinisekisa ukuphathwa okuphephile kwama-wafers e-silicon phakathi nezinqubo zokukhiqiza. Izikebhe ze-SiC wafer ziyaqhubeka nokubamba iqhaza elibalulekile ekuqhubekiseni ukukhula nokuqanjwa kabusha kwemboni ye-semiconductor.