Imboni ye-semiconductor ibona ukukhula okungakaze kubonwe ngaphambili, ikakhulukazi endaweni yei-silicon carbide (SiC)amandla kagesi.Ngezici eziningi ezinkuluisilucwecwanaizindwangu ezakhiwayo noma ezinwetshwayo ukuze kuhlangatshezwane nesidingo esikhulayo samadivayisi e-SiC ezimotweni zikagesi, le boom inikeza amathuba amangalisayo okukhula kwenzuzo.Kodwa-ke, iphinde iveze izinselelo ezihlukile ezidinga izixazululo ezintsha.
Umnyombo wokukhula kokukhiqizwa kwe-chip ye-SiC yomhlaba wonke ukukhiqizwa kwamakristalu e-SiC ekhwalithi ephezulu, amawafa, nezingqimba ze-epitaxial.Lapha,i-semiconductor-grade graphiteizinto zokwakha zidlala indima ebalulekile, zenza kube lula ukukhula kwekristalu ye-SiC kanye nokubekwa kwezingqimba ze-SiC epitaxial.Ukufakwa okushisayo kwe-graphite kanye nokungabi namandla kwayo kuyenza ibe into ekhethwayo, esetshenziswa kakhulu kuma-crucibles, ama-pedals, ama-planetary disk, namasathelayithi ngaphakathi kokukhula kwekristalu nezinhlelo ze-epitaxy.Noma kunjalo, izimo zenqubo ezinzima zibeka inselele enkulu, okuholela ekuwohlokeni okusheshayo kwezingxenye ze-graphite futhi kamuva kuvimbele ukukhiqizwa kwamakristalu e-SiC aphezulu kanye nezingqimba ze-epitaxial.
Ukukhiqizwa kwamakristalu e-silicon carbide kuhlanganisa izimo zenqubo ezinzima kakhulu, okuhlanganisa amazinga okushisa angaphezu kuka-2000°C kanye negesi egqwala kakhulu.Lokhu ngokuvamile kubangela ukugqwala okuphelele kweziphamba ze-graphite ngemva kwemijikelezo eminingana yenqubo, ngaleyo ndlela kukhuphule izindleko zokukhiqiza.Ukwengeza, izimo ezinzima zishintsha izakhiwo ezingaphezulu zezingxenye ze-graphite, ezibeka engozini ukuphindaphinda nokuzinza kwenqubo yokukhiqiza.
Ukuze kuliwe nalezi zinselele ngokuphumelelayo, ubuchwepheshe bokumboza okokuvikela buye bavela njengoshintsho lwegeyimu.Izingubo zokuzivikela ezisekelwei-tantalum carbide (TaC)kwethulwe ukubhekana nezinkinga zokucekelwa phansi kwengxenye ye-graphite kanye nokushoda kokuhlinzekwa kwe-graphite.Izinto ze-TaC zibonisa izinga lokushisa elincibilikayo elingaphezu kuka-3800°C kanye nokumelana namakhemikhali okukhethekile.Ukusebenzisa ubuchwepheshe be-chemical vapor deposition (CVD),I-TaC coatingsenogqinsi olungafika kumamilimitha angama-35 ingafakwa ngaphandle komthungo ezingxenyeni zegraphite.Lesi sendlalelo esivikelayo asigcini nje ngokuthuthukisa ukuzinza kwezinto kodwa futhi sandisa kakhulu isikhathi sokuphila sezingxenye ze-graphite, ngenxa yalokho sehlise izindleko zokukhiqiza futhi sithuthukise ukusebenza kahle kokusebenza.
Semicera, umhlinzeki oholayo weI-TaC coatings, ube nesandla ekuguquleni imboni ye-semiconductor.Ngobuchwepheshe bayo obusezingeni eliphezulu nokuzibophezela okungantengantengi kwikhwalithi, i-Semicera inike amandla abakhiqizi be-semiconductor ukuthi banqobe izinselele ezibucayi futhi bafinyelele izinga eliphezulu lempumelelo.Ngokuhlinzeka ngezingubo ze-TaC ngokusebenza okungenakuqhathaniswa nokwethembeka, i-Semicera isiqinise isikhundla sayo njengozakwethu othembekile wezinkampani ezisebenza ngamasemiconductor emhlabeni jikelele.
Sengiphetha, ukuvikela enamathela ubuchwepheshe, powered by emisha likeI-TaC coatingskusuka ku-Semicera, ilungisa kabusha isimo se-semiconductor futhi ivula indlela yekusasa elisebenza kahle nelisimeme.
Isikhathi sokuthumela: May-16-2024