Okuqukethwe Okuthuthukisiwe Nokuhunyushiwe ku-Silicon Carbide Epitaxial Growth Equipment

Ama-substrates e-Silicon carbide (SiC) anokukhubazeka okuningi okuvimbela ukucubungula okuqondile. Ukwakha ama-chip wafers, ifilimu ethile yekristalu eyodwa kufanele ikhule ku-substrate ye-SiC ngenqubo ye-epitaxial. Le filimu yaziwa ngokuthi yi-epitaxial layer. Cishe wonke amadivayisi we-SiC atholakala ezintweni ze-epitaxial, futhi izinto zekhwalithi ephezulu ze-homoepitaxial SiC zakha isisekelo sokuthuthukiswa kwedivayisi ye-SiC. Ukusebenza kwezinto ze-epitaxial kunquma ngokuqondile ukusebenza kwamadivayisi we-SiC.

Amadivayisi e-SiC amanje kakhulu futhi athembeke kakhulu abeka izidingo eziqinile ku-morphology yangaphezulu, ukuminyana kokukhubazeka, ukufana kwe-doping, kanye nokufana kokuqinai-epitaxializinto zokwakha. Ukuthola usayizi omkhulu, ukuminyana okunesici esiphansi, kanye nokufana okuphezulu kwe-SiC epitaxy sekubaluleke kakhulu ekuthuthukisweni kwemboni ye-SiC.

Ukukhiqiza i-epitaxy yekhwalithi ephezulu ye-SiC kuncike ezinqubweni ezithuthukisiwe namathuluzi. Njengamanje, indlela esetshenziswa kakhulu yokukhula kwe-SiC epitaxial yiI-Chemical Vapor Deposition (CVD).I-CVD inikeza ukulawula okunembile kokujiya kwefilimu ye-epitaxial nokugxiliswa kwe-doping, ukuminyana kokukhubazeka okuphansi, izinga lokukhula elimaphakathi, nokulawulwa kwenqubo okuzenzakalelayo, okuyenza ibe ubuchwepheshe obuthembekile bezicelo eziphumelelayo zezentengiselwano.

I-SiC CVD epitaxyngokuvamile zisebenzisa i-hot-wall noma imishini ye-CVD yodonga olufudumele. Amazinga okushisa aphezulu okukhula (1500-1700 ° C) aqinisekisa ukuqhubeka kwefomu le-crystalline le-4H-SiC. Ngokusekelwe ebudlelwaneni phakathi kwesiqondiso sokugeleza kwegesi nendawo engaphansi, amagumbi okusabela alezi zinhlelo ze-CVD angahlukaniswa abe yizakhiwo ezivundlile nezime mpo.

Ikhwalithi yamafurnace e-SiC epitaxial ikakhulukazi yahlulelwa ezicini ezintathu: ukusebenza kokukhula kwe-epitaxial (okuhlanganisa ukufana kogqinsi, ukufana kwe-doping, izinga lokukhubazeka, nezinga lokukhula), ukusebenza kwezinga lokushisa kwezisetshenziswa (okuhlanganisa amazinga okushisa/okupholisa, izinga lokushisa eliphezulu, nokufana kwezinga lokushisa. ), kanye nokuphumelela kwezindleko (okuhlanganisa inani leyunithi namandla okukhiqiza).

Umehluko Phakathi Kwezinhlobo Ezintathu Ze-SiC Epitaxial Growth Furnaces

1. I-Horizontal CVD Systems enezindonga ezishisayo:

-Izici:Ngokuvamile ifaka amasistimu okukhula anosayizi omkhulu we-wafer eyodwa eqhutshwa ukuzungezisa ukuntanta kwegesi, kuzuzwe amamethrikhi amahle kakhulu we-intra-wafer.

-Imodeli emele:I-LPE's Pe1O6, ekwazi ukulayisha/ukulayishwa kwe-wafer okuzenzakalelayo ku-900°C. Kwaziwa ngamazinga aphezulu okukhula, imijikelezo emifushane ye-epitaxial, nokusebenza okungaguquki kwe-intra-wafer nokusebenza kwangaphakathi.

-Ukusebenza:Kuma-4-6 inch 4H-SiC epitaxial wafer anogqinsi ≤30μm, ifinyelela ukushuba kwe-intra-wafer okungafanani no-≤2%, ukugxiliswa kwe-doping okungafani ≤5%, ukuminyana kokukhubazeka kwendawo ≤1 cm-², futhi ayinasici indawo engaphezulu (amaseli angu-2mm×2mm) ≥90%.

-Abakhiqizi Basekhaya: Izinkampani ezifana ne-Jingsheng Mechatronics, CETC 48, North Huachuang, ne-Nasset Intelligent zenze umshini ofanayo we-SiC we-wafer we-epitaxial we-epitaxial kanye nokukhiqizwa okwenziwe ngezinga eliphezulu.

2. I-Wam-wall Planetary CVD Systems:

-Izici:Sebenzisa izisekelo zeplanethi yokukhula kwama-wafer amaningi ngeqoqo ngalinye, uthuthukise kakhulu ukusebenza kahle kokukhiphayo.

-Amamodeli Amele:I-AIXG5WWC ye-Aixtron (8x150mm) ne-G10-SiC (9x150mm noma 6x200mm) uchungechunge.

-Ukusebenza:Kumawafa e-epitaxial angu-6-intshi angu-4H-SiC anogqinsi ≤10μm, afinyelela ukuchezuka kogqinsi lwe-inter-wafer ±2.5%, ukushuba kwe-intra-wafer okungafanani no-2%, ukuchezuka kwe-inter-wafer doping concentration ±5%, kanye ne-intra-wafer doping ukugxila okungefani <2%.

-Izinselele:Ukwamukelwa okulinganiselwe ezimakethe zasekhaya ngenxa yokuntuleka kwedatha yokukhiqiza iqoqo, izithiyo zobuchwepheshe ekulawuleni izinga lokushisa nokugeleza kwenkundla, kanye ne-R&D eqhubekayo ngaphandle kokuqaliswa kwezinga elikhulu.

3. Quasi-hot-wall Vertical CVD Systems:

- Izici:Sebenzisa usizo lwemishini lwangaphandle ukuzungezisa i-substrate enesivinini esikhulu, unciphise ukujiya kongqimba lomngcele futhi uthuthukise izinga lokukhula kwe-epitaxial, ngezinzuzo ezingokwemvelo ekulawuleni amaphutha.

- Amamodeli amele:I-wafer eyodwa ye-Nuflare i-EPIREVOS6 kanye ne-EPIREVOS8.

-Ukusebenza:Ifinyelela amazinga okukhula angaphezu kuka-50μm/h, ukulawula ukuminyana kokukhubazeka ngaphansi kuka-0.1 cm-², nogqinsi lwe-intra-wafer nokugxilisaniswa kwe-doping okungefani ku-1% no-2.6%, ngokulandelana.

-Intuthuko Yasekhaya:Izinkampani ezifana ne-Xingsandai ne-Jingsheng Mechatronics zidizayine imishini efanayo kodwa azikaze zizuze ukusetshenziswa okukhulu.

Isifinyezo

Ngalunye lwezinhlobo ezintathu zesakhiwo semishini yokukhula ye-SiC epitaxial inezici ezihlukile futhi ithatha izingxenye ezithile zemakethe ngokuya ngezidingo zohlelo lokusebenza. I-CVD evundlile yodonga olushisayo inikezela ngamazinga okukhula ashesha kakhulu kanye nekhwalithi elinganiselayo nokufana kodwa inokukhiqiza okuphansi okusebenzayo ngenxa yokucubungula kwe-wafer eyodwa. I-CVD yeplanethi yodonga olufudumele ithuthukisa kakhulu ukusebenza kahle kokukhiqiza kodwa ibhekene nezinselelo ekulawuleni ukungaguquguquki kwama-wafer amaningi. I-Quasi-hot-wall emile ye-CVD iphumelela kakhulu ekulawulweni kokukhubazeka ngesakhiwo esiyinkimbinkimbi futhi idinga ukunakekelwa okubanzi nolwazi lokusebenza.

Njengoba imboni ithuthuka, ukwenza ngcono okuphindaphindwayo kanye nokuthuthukiswa kulezi zakhiwo zemishini kuzoholela ekucushweni okuthuthukisiwe okukhulayo, ukudlala indima ebalulekile ekuhlangabezaneni nokucaciswa kwe-epitaxial wafer okuhlukahlukene kokujiya kanye nezidingo zokukhubazeka.

Izinzuzo kanye nokubi Kwezifudumezi Zokukhula Ezihlukile ze-SiC Epitaxial

Ngokuthuthuka komkhakha okuqhubekayo, lezi zinhlobo ezintathu zezinto zokusebenza zizothuthukiswa ngokuphindaphindiwe kwesakhiwo, okuholela ekucushweni okuthuthukisiwe okufana nokucaciswa kwe-epitaxial wafer okuhlukahlukene kokujiya kanye nezidingo zokukhubazeka.