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Iyini i-Tantalum Carbide?
I-Tantalum carbide (TaC) iyinhlanganisela kanambambili ye-tantalum kanye nekhabhoni enefomula yamakhemikhali i-TaC x, lapho u-x ngokuvamile ehluka phakathi kuka-0.4 no-1. Ziqinile ngokwedlulele, ziqinile, ziyizinto ze-ceramic eziphikisayo ezine-metallic conductivity. Ziyimpushana e-brown-grey futhi ngathi...Funda kabanzi -
yini i-tantalum carbide
I-Tantalum carbide (i-TaC) iyimpahla ye-ceramic yokushisa ephezulu kakhulu enokumelana nokushisa okuphezulu, ukuminyana okuphezulu, ukubumbana okuphezulu; ukuhlanzeka okuphezulu, okuqukethwe okungcolile <5PPM; kanye nokungangeni kwamakhemikhali ku-ammonia ne-hydrogen emazingeni okushisa aphezulu, nokuzinza okuhle kokushisa. Okubizwa nge-ultra-high ...Funda kabanzi -
Iyini i-epitaxy?
Onjiniyela abaningi abajwayelene ne-epitaxy, edlala indima ebalulekile ekukhiqizeni idivayisi ye-semiconductor. I-Epitaxy ingasetshenziswa emikhiqizweni ye-chip ehlukene, futhi imikhiqizo ehlukene inezinhlobo ezahlukene ze-epitaxy, okuhlanganisa i-Si epitaxy, i-SiC epitaxy, i-GaN epitaxy, njll. Iyini i-epitaxy?I-Epitaxy iyi...Funda kabanzi -
Yiziphi izici ezibalulekile ze-SiC?
I-Silicon carbide (SiC) iyinto ebalulekile ebanzi ye-bandgap semiconductor esetshenziswa kabanzi kumadivayisi kagesi anamandla aphezulu kanye namaza aphezulu. Okulandelayo amanye amapharamitha angukhiye wama-silicon carbide wafers kanye nezincazelo zawo ezinemininingwane: I-Lattice Parameters:Qinisekisa ukuthi ...Funda kabanzi -
Kungani i-silicon eyodwa ye-crystal idinga ukugoqwa?
I-Rolling isho inqubo yokugaya ububanzi obungaphandle be-silicon single crystal rod ibe induku eyodwa yekristalu yobubanzi obudingekayo kusetshenziswa isondo lokugaya idayimane, futhi kugaywe indawo eyisithenjwa yonqenqema oluyisicaba noma umsele wokuma wenduku eyodwa yekristalu. I-surfac yobubanzi obungaphandle...Funda kabanzi -
Izinqubo Zokukhiqiza Izimpushana Ze-SiC Ezisezingeni Eliphezulu
I-Silicon carbide (SiC) iyinhlanganisela ye-inorganic eyaziwa ngezakhiwo zayo ezihlukile. I-SiC eyenzeka ngokwemvelo, eyaziwa ngokuthi i-moissanite, ayivamile. Ezisetshenziswa ezimbonini, i-silicon carbide ikhiqizwa kakhulu ngezindlela zokwenziwa.E-Semicera Semiconductor, sisebenzisa ubuchwepheshe obuthuthukisiwe...Funda kabanzi -
Ukulawulwa kokufana kwe-radial resistivity ngesikhathi sokudonsa kwekristalu
Izizathu eziyinhloko ezithinta ukufana kwe-radial resistivity yamakristalu awodwa ukucaba kwesixhumi esibonakalayo esiwuketshezi oluqinile kanye nomthelela omncane wendiza ngesikhathi sokukhula kwekristalu Ithonya lokucaba kwesixhumi esibonakalayo esiqinile-soketshezi Ngesikhathi sokukhula kwekristalu, uma ukuncibilika kushukunyiswa ngokulinganayo. , i...Funda kabanzi -
Kungani i-magnetic field single crystal furnace ingathuthukisa ikhwalithi yekristalu eyodwa
Njengoba i-crucible isetshenziswa njengesiqukathi futhi kukhona i-convection ngaphakathi, njengoba usayizi wekristalu eyodwa okhiqizwayo ukhula, ukuguqulwa kokushisa kanye nokufana kwezinga lokushisa kuba nzima kakhulu ukulawula. Ngokungeza inkambu kazibuthe ukwenza ukuncibilika kwe-conductive kusebenze ku-Lorentz force, i-convection ingaba...Funda kabanzi -
Ukukhula okusheshayo kwekristalu eyodwa ye-SiC kusetshenziswa umthombo wenqwaba we-CVD-SiC ngendlela ye-sublimation
Ukukhula Ngokushesha kwe-SiC Single Crystal Ukusebenzisa Umthombo Wenqwaba we-CVD-SiC Nge-Sublimation MethodNgokusebenzisa amabhulokhi e-CVD-SiC agaywe kabusha njengomthombo we-SiC, amakristalu e-SiC akhuliswe ngempumelelo ngenani elingu-1.46 mm/h ngendlela ye-PVT. I-crystal encane ye-micropipe ne-dislocation ye-crystal ekhulile ibonisa ukuthi ...Funda kabanzi -
Okuqukethwe Okuthuthukisiwe Nokuhunyushiwe ku-Silicon Carbide Epitaxial Growth Equipment
Ama-substrates e-Silicon carbide (SiC) anokukhubazeka okuningi okuvimbela ukucubungula okuqondile. Ukwakha ama-chip wafers, ifilimu ethile yekristalu eyodwa kufanele ikhule ku-substrate ye-SiC ngenqubo ye-epitaxial. Le filimu yaziwa ngokuthi yi-epitaxial layer. Cishe wonke amadivayisi we-SiC atholakala ku-epitaxial...Funda kabanzi -
Iqhaza Elibalulekile kanye Nezimo Zokusebenza Ze-SiC-Coated Graphite Susceptors ku-Semiconductor Manufacturing
I-Semicera Semiconductor ihlela ukwandisa ukukhiqizwa kwezingxenye eziyinhloko zemishini yokukhiqiza ye-semiconductor emhlabeni jikelele. Ngo-2027, sihlose ukusungula ifekthri entsha yamamitha-skwele angama-20,000 nesamba sokutshalwa kwezimali esingama-USD ayizigidi ezingama-70. Enye yezingxenye zethu eziyinhloko, i-silicon carbide (SiC) wafer carr...Funda kabanzi -
Kungani sidinga ukwenza i-epitaxy kuma-silicon wafer substrates?
Ochungechungeni lwemboni ye-semiconductor, ikakhulukazi kuchungechunge lwezimboni ze-semiconductor yesizukulwane sesithathu (i-wide bandgap semiconductor), kukhona ama-substrates kanye nezendlalelo ze-epitaxial. Kuyini ukubaluleka kwe-epitaxial layer? Uyini umehluko phakathi kwe-substrate ne-substrate? I-substr ...Funda kabanzi